Two-dimensional bismuth-oxide selenide crystal and near-infrared light based electric detector
A technology of bismuth selenium oxide and near-infrared light, applied in the field of materials
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Embodiment 1
[0055] Embodiment 1, preparation two-dimensional bismuth selenium oxide crystal
[0056] Bi with a particle size of about 30 microns 2 o 3 Powder and Bi with a length of 5 cm on the longest side 2 Se 3 body as raw material, Bi 2 o 3 Powder and Bi 2 Se 3 The molar ratio of the block is 3:1, in mica (chemical formula is KMg 3 (AlSi 3 o 10 )F 2 ) on the substrate, the carrier gas is argon, the system pressure is 400torr, the deposition temperature is 570°C, the deposition is completed after 20 minutes of deposition, and the system is naturally cooled to room temperature to obtain the two-dimensional bismuth selenium oxide crystal provided by the present invention , the optical image under the metallographic microscope is as follows figure 1 As shown, the domain size is 50 μm.
[0057] Following the same steps as above, only changing the deposition time from 20 minutes to 35 minutes, a two-dimensional bismuth selenium oxide crystal with a domain size of 100 μm was obt...
Embodiment 2
[0058] Example 2: Construct a two-dimensional bismuth selenium oxide photodetector to detect wavelengths of 690-1770 nm.
[0059] 1) Preparation of bismuth selenium oxide photodetector:
[0060] The two-dimensional bismuth selenium oxide crystal with a domain size of 50 microns obtained in Example 1 was used P5350 positive photoresist, 4000r / min for 50s, and then baked at 110°C for 3min, and then subjected to ultraviolet exposure and development. After that, 5nm Cr / 45nm Au metal was thermally evaporated and lifted off with acetone to obtain marks for the next step of electron beam exposure on the mica substrate. Spin-coat 950KA4PMMA electron beam positive resist on the marked mica sample at a rotational speed of 2000r / min and bake at 150°C for 5min. Then spin-coat the water-soluble conductive polymer, the rotation speed is 2000r / min, and the glue-baking condition is 90°C for 1min. Use electron beam exposure to expose the arrayed pattern on the sample. After developing and f...
Embodiment 3
[0073] Example 3 Constructing a two-dimensional bismuth selenium oxide array photodetector to realize high-resolution near-infrared second-region imaging of the pattern "Peking University" (hair body)
[0074] 1) Using the two-dimensional bismuth selenium oxide crystal with a domain size of 100 microns obtained in Example 1, prepare according to the method of Example 2 step 1) image 3 The bismuth selenium oxide photodetector shown uses electron beam exposure and metal thermal evaporation to make a pattern with the "Peking University" (hair body) logo on a silicon wafer as an imaging object.
[0075] 2) Put the imaging object produced in the above step (1) on the motorized stage of the microscope, and place a black acrylic plastic plate on the imaging object as a shield, and the ordinary commercial visible light CCD will not be able to see the "Peking University" logo pattern . The position of the microscope CCD is replaced by the two-dimensional bismuth selenium oxide detecto...
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