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A kind of carbon material surface silicon carbide nano-whiskers and preparation method thereof

A technology of nano-whiskers and silicon carbide, which is applied in the direction of nanotechnology, nanotechnology, nanotechnology, etc. for materials and surface science, can solve the problems of high preparation cost and high price, and achieve mild reaction conditions, environmental friendliness, The effect of simple process

Inactive Publication Date: 2019-06-25
WUHAN UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in this process, carbon nanotubes are used as the carbon source, which is expensive and the preparation cost is relatively high.

Method used

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  • A kind of carbon material surface silicon carbide nano-whiskers and preparation method thereof
  • A kind of carbon material surface silicon carbide nano-whiskers and preparation method thereof
  • A kind of carbon material surface silicon carbide nano-whiskers and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0030] A silicon carbide nano whisker on the surface of a carbon material and a preparation method thereof. The concrete steps of this embodiment are:

[0031] Step 1. According to the molar ratio of silicon powder: silicon dioxide powder is 1: (0.25~1), the silicon powder and silicon dioxide powder are evenly mixed to obtain a silicon source.

[0032] Step 2. Put the pitch-based carbon fiber in a high-temperature graphitization furnace, and pass in argon gas for high-temperature carbonization treatment. The temperature of the high-temperature carbonization treatment is 1000-1600 ° C, and the time of the high-temperature carbonization treatment is 0.5-1 hour to obtain a carbon source.

[0033] Step 3. According to the molar ratio of the silicon source: the carbon source being 1: (0.25~1), the silicon source and the carbon source are placed in a graphite crucible in turn, and then the graphite crucible is put into In the high-temperature carbonization furnace, vacuumize to 5~2...

Embodiment 2

[0037] A silicon carbide nano whisker on the surface of a carbon material and a preparation method thereof. The concrete steps of this embodiment are:

[0038] Step 1. According to the molar ratio of silicon powder: silicon dioxide powder is 1: (1~2), the silicon powder and silicon dioxide powder are evenly mixed to obtain a silicon source.

[0039] Step 2. Put the pitch-based carbon fiber felt in a high-temperature graphitization furnace, and pass in argon gas to carry out high-temperature carbonization treatment. The temperature of high-temperature carbonization treatment is 1600-2200 ° C, and the time of high-temperature carbonization treatment is 0.5-1 hour to obtain carbon source .

[0040] Step 3. According to the silicon source: the molar ratio of the carbon source is 1: (1~2), the silicon source and the carbon source are sequentially placed in a graphite crucible, and then the graphite crucible is put into In the high-temperature carbonization furnace, vacuumize to 5...

Embodiment 3

[0044] A silicon carbide nano whisker on the surface of a carbon material and a preparation method thereof. The concrete steps of this embodiment are:

[0045] Step 1. According to the molar ratio of silicon powder: silicon dioxide powder is 1: (2~3), the silicon powder and silicon dioxide powder are evenly mixed to obtain a silicon source.

[0046] Step 2. Put the pitch-based carbon fiber in a high-temperature graphitization furnace, and pass in argon gas to carry out high-temperature carbonization treatment. The temperature of high-temperature carbonization treatment is 2200-2800 ° C, and the time of high-temperature carbonization treatment is 0.5-1 hour to obtain carbon source.

[0047] Step 3. According to the silicon source: the molar ratio of the carbon source is 1: (3~4), the silicon source and the carbon source are sequentially placed in a graphite crucible, and then the graphite crucible is put into In the high-temperature carbonization furnace, vacuumize to 5~20Pa, ...

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Abstract

The invention relates to carbon material surface silicon carbide nanowhiskers and a preparation method thereof. The technical scheme is as follows: uniformly mixing silicon powder and silicon dioxide powder according to the mole ratio of 1 to (0.3-4) to obtain a silicon source; placing asphalt-based carbon fiber or carbon fiber felt in a high-temperature graphitization furnace, thermally treating for 0.5-1h at 1000-2800 DEG C in argon atmosphere, thereby obtaining a carbon source; orderly placing the silicon source and the carbon source in a graphite crucible according to the mole ratio of 1 to (0.25-4), and then placing the graphite crucible in a high-temperature carbonization furnace, vacuum-pumping to 5-20Pa, pumping in argon to normal pressure; warming the high-temperature carbonization furnace to 1200-1500 DEG C in a speed rate of 10-20 DEG C / min under the argon atmosphere condition, keeping temperature for 0.5-3h, naturally cooling to room temperature to obtain the carbon material surface silicon carbide nanowhiskers. The preparation method disclosed by the invention is simple in process, mild in reaction condition, environment-friendly; and a prepared product is excellent in optical property and electrochemical property.

Description

technical field [0001] The invention belongs to the technical field of silicon carbide nano whiskers. In particular, it relates to a silicon carbide nano-whisker on the surface of a carbon material and a preparation method thereof. Background technique [0002] Silicon carbide nanowhiskers (SiC w ) is a high-purity single crystal material with a diameter ranging from nanometers to micrometers. Based on its perfect crystal structure, silicon carbide whiskers have high melting point (>2700℃), low density, excellent tensile strength (tensile strength is 2100MPa) and good mechanical properties of specific strength and specific elastic modulus. It is widely used as a reinforcing and toughening additive for various high-performance materials. At the same time, one-dimensional silicon carbide nanowhiskers have excellent optical and electrical properties, and can work in harsh environments such as high temperature, high energy, and high frequency, so they have attractive appli...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01M4/36H01M4/583H01M4/58H01M10/0525B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H01M4/366H01M4/58H01M4/583H01M10/0525Y02E60/10
Inventor 李轩科朱辉董志军袁观明
Owner WUHAN UNIV OF SCI & TECH