SF6 gas sensor
A gas sensor and sensor technology, applied in the direction of instruments, scientific instruments, measuring devices, etc., can solve the problems of polluting the atmosphere, weakening the arc extinguishing ability, and personnel injury, etc., to reduce the negative corona discharge voltage, reduce the corona discharge current, and improve Effects on Stability and Lifetime
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Embodiment 1
[0056] Nanoelectrode arrays were prepared as follows:
[0057] (1) A silicon dioxide film is formed by wet oxygen oxidation on the surface of a square silicon wafer substrate 1 with a thickness of 100 μm after cleaning. The silicon wafer substrate 1 is a double-sided polished silicon wafer with a 110 crystal orientation, and the reaction temperature is 600 ° C. The thickness of the silicon dioxide film is 10 nm; the shape of the silicon dioxide mask formed by photolithography is mirror-symmetrical to the silicon tip array 2, and silicon anisotropic silicon wet etching is used to form the silicon dioxide film vertically arranged on the silicon chip substrate 1. Tip array 2, the etching solution is KOH solution, etched on a wet etching operation bench, the temperature is room temperature; use HF buffer solution to remove silicon dioxide from the silicon tip array;
[0058] The surfactant is TritonX-100.
[0059] The formed silicon chip substrate 1 is uniformly and vertically ar...
Embodiment 2
[0075] Nanoelectrode arrays were prepared as follows:
[0076] (1) A silicon dioxide film is formed by wet oxygen oxidation on the surface of a circular silicon wafer substrate 1 with a thickness of 1000 μm after cleaning. The silicon wafer substrate 1 is a double-sided polished silicon wafer with a 110 crystal orientation, and the reaction temperature is 1000 ° C. The silicon dioxide film is formed with a thickness of 200nm; the silicon dioxide mask formed by photolithography is mirror-symmetrical to the silicon tip array 2, and is vertically arranged on the silicon wafer substrate 1 by using silicon anisotropic silicon wet etching. For silicon tip array 2, the etching solution is tetramethylammonium hydroxide (TMAH) solution, which is etched on a wet etching operation bench at room temperature; the silicon dioxide of the silicon tip array is removed with HF buffer solution;
[0077] The surfactant is NC-200.
[0078] The formed silicon chip substrate 1 is uniformly and vert...
Embodiment 3
[0094] Nanoelectrode arrays were prepared as follows:
[0095] (1) A silicon dioxide film is formed by wet oxygen oxidation on the surface of a square silicon wafer substrate 1 with a thickness of 500 μm after cleaning. The silicon wafer substrate 1 is a double-sided polished silicon wafer with a 110 crystal orientation, and the reaction temperature is 800 ° C. The thickness of the silicon dioxide film is 100nm; the shape of the silicon dioxide mask formed by photolithography is mirror-symmetrical to the silicon tip array 2, and the silicon dioxide mask vertically arranged on the silicon chip substrate 1 is formed by silicon anisotropic silicon wet etching. Tip array 2, the etching solution is KOH solution, etched on a wet etching operation bench, the temperature is room temperature; use HF buffer solution to remove silicon dioxide from the silicon tip array;
[0096] The surfactant is TritonX-100.
[0097] The formed silicon chip substrate 1 is uniformly and vertically arran...
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