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Halogen-doped ZnMgO film and preparation method thereof

A thin film and halogen technology, applied in the field of halogen-doped ZnMgO thin film and its preparation, can solve the problems of low repeatability, high level of preparation process, high cost, etc., and achieve the effects of simplified preparation process, wide application prospect and easy control

Inactive Publication Date: 2017-07-07
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These methods generally need to be completed in a vacuum environment or a high pressure environment, the preparation process level is high, the repeatability is not high, and the cost is expensive

Method used

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  • Halogen-doped ZnMgO film and preparation method thereof
  • Halogen-doped ZnMgO film and preparation method thereof
  • Halogen-doped ZnMgO film and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0032] A method for preparing a halogen-doped ZnMgO thin film, comprising the steps of:

[0033] 1) Dip the Si sheet or quartz glass sheet into acetone, absolute ethanol, and deionized water respectively, then use an ultrasonic cleaning machine to sonicate for 15 minutes and dry it with an infrared lamp;

[0034] 2) 2.1064g of zinc acetate dihydrate and 0.1083g of magnesium acetate tetrahydrate solid were dissolved in 50ml of ethylene glycol methyl ether solution, and then 0.98mL of ethanolamine (MEA) was added to make Zn in the solution 2+ , Mg 2+ Concentration [Zn 2+ +Mg 2+ ]: The molar concentration ratio of ethanolamine (MEA) is ≈1, and then placed on a constant temperature magnetic stirrer for full stirring. The temperature is set at 70°C, and the holding time is 1 hour to obtain Zn 0.95 Mg 0.05 O sol, then add 0.01mol of NH 4 X (X represents a halogen, such as one of F, Cl, Br, and I), and continued to stir for 2h to realize the doping of ZnMgO by halogen. After f...

Embodiment 2

[0038] Embodiment 2 (for comparative example):

[0039] A method for preparing a halogen-doped ZnMgO thin film, comprising the steps of:

[0040] 1) Dip the Si sheet or quartz glass sheet into acetone, absolute ethanol, and deionized water respectively, then use an ultrasonic cleaning machine to sonicate for 15 minutes and dry it with an infrared lamp;

[0041] 2) 2.1064g of zinc acetate dihydrate and 0.1083g of magnesium acetate tetrahydrate solid were dissolved in 50ml of ethylene glycol methyl ether solution, and then 0.98mL of ethanolamine (MEA) was added to make Zn in the solution 2+ : The molar concentration ratio of MEA is ≈1, and then placed on a constant temperature magnetic stirrer for full stirring. The temperature is set at 70°C and the holding time is 3h to obtain Zn 0.95 Mg 0.05 The sol of O does not use halogen doping. After fully stirring, cool to room temperature and filter through filter paper to obtain a transparent sol with a cation concentration of 0.2...

Embodiment 3

[0046] A method for preparing a halogen-doped ZnMgO thin film, comprising the steps of:

[0047] 1) Dip the Si sheet or quartz glass sheet into acetone, absolute ethanol, and deionized water respectively, then use an ultrasonic cleaning machine to sonicate for 15 minutes and dry it with an infrared lamp;

[0048] 2) 1.9956, 1.7738, 1.5521g of zinc acetate dihydrate and 0.2166, 0.4332, 0.6498g of magnesium acetate tetrahydrate solid were dissolved in 50ml of ethylene glycol methyl ether solution, and then 0.98mL of ethanolamine (MEA) was added, so that Zn in solution 2+ , Mg 2+ Concentration [Zn 2+ +Mg 2+ ]: MEA molar concentration ratio ≈ 1, and then placed on a constant temperature magnetic stirrer for full stirring. Configured as Zn respectively 0.9 Mg 0.1 O, Zn 0.8 Mg 0.2 O, Zn 0.7 Mg 0.3 O three kinds of sols, in which the temperature was set at 70 ° C, the holding time was 1 hour, and then 0.05 mol of NH was added 4 Cl, and continue stirring for 2h to realize C...

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Abstract

The invention belongs to the fields of low-dimensional nanometer material and nanometer technique and provides a halogen-doped ZnMgO film and a preparation method thereof. The preparation method comprises the following steps: cleaning and drying a substrate; adding zinc acetate and a magnesium source into a solvent, wherein ethylene glycol monomethyl ether or normal propyl alcohol is taken as the solvent and ethanol amine is taken as a stabilizer; stirring for 1-2h at 55-80 DEG C, thereby acquiring a solution; adding NH4X or NaX into the solution, wherein X represents halogen; stirring for 2-3h at 55-80 DEG C, thereby acquiring a uniform and stable solution; utilizing a spinning method to prepare the film on the substrate and repeating for several times; putting the substrate with the film into a thermal treatment furnace and annealing, wherein the annealing temperature is at 400-700 DEG C and the heat insulating time is 0.5-3h; and cooling to room temperature, thereby acquiring the halogen-doped ZnMgO film. The preparation method for the halogen-doped ZnMgO film provided by the invention is characterized by mild preparation environment, low cost, high reliability and simple process. The method is expected to be used for preparing a film material with a piezoelectric property.

Description

technical field [0001] The invention belongs to the field of low-dimensional nanometer materials, in particular to ZnMgO film doped by halogen and its preparation method. Background technique [0002] Wurtzite-structured ZnMgO is a direct-bandgap wide-bandgap semiconductor material with piezoelectric and photoelectric properties, and has a standard hexagonal wurtzite structure. As a typical light-emitting material, it has obvious advantages in short-wavelength light sources such as blue-green light and ultraviolet light, and can be used to prepare a variety of light-emitting devices, such as planar optical waveguides, transparent electrodes, ultraviolet light detectors, ultraviolet light emitting devices etc. However, with the development of science and technology, people's requirements for the application of devices are constantly increasing, and many shortcomings in the application of ZnMgO are increasingly apparent, such as the exciton binding energy is not large enough,...

Claims

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Application Information

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IPC IPC(8): C03C17/00C01G9/00H01L41/18H01L41/37H01L41/39
CPCC01G9/00C03C17/006C01P2002/84C01P2002/72C01P2004/80C03C2217/228C03C2218/116H10N30/852H10N30/093H10N30/092
Inventor 戴英乐志凯李毛劝裴新美陈文
Owner WUHAN UNIV OF TECH
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