Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing nanostructure using photo-activation nano active water

A technology of nanostructure and active water, which is applied in the direction of nanostructure manufacturing, nanotechnology, nanotechnology, etc., can solve the problems of expensive equipment, large nanostructure particle size, difficult nanocomposite nanostructure, etc., and achieve unique mechanical properties, The effect of uniform and delicate texture and dense nanostructure

Inactive Publication Date: 2009-02-04
张金龙
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Expensive equipment and high power consumption
[0003] The problem with these nanostructures is that the uniformity of the nanomembrane is poor, and the small area completed at one time has uneven bonding points. It is difficult to complete the nanostructure of the nanocomposite material, especially the nanostructure of the nanocomposite material with a large area. Under the beam conditions, the particle size of the formed nanostructure is coarse, and its optical properties, high temperature resistance properties, mechanical properties, magnetic properties, electrical properties, physical properties, chemical properties, etc. cannot be fully exerted, and the bonding strength of the nano-deposited layer Poor, affecting its application, especially in military applications
The optical properties of nano-coatings have not fully utilized the optical properties of nano-materials, and the bonding strength of coatings is poor because it is impossible to make all nano-materials and apply them on the carrier.
[0006] In the coating processing or maintenance of mechanical parts, spraying, brush plating, electroplating, etc. are often used. Due to the coarse metal particle size of the added deposition layer, the mechanical properties are poor, such as: poor toughness, poor fatigue resistance, poor interlayer bonding force, The bonding layer is peeled off, which greatly limits the application of this process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0050] The photocatalytic nano-active water produced by Zhang Jinlong and Liu Lihong's 18 patented technologies, adding nano-titanium into the active water, under the irradiation of an 8-watt ultraviolet lamp, under normal temperature, within 4 days, the glass, ceramics, metal, Nano-titanium film is deposited on plastics, fibers, etc., and the deposited layer is fine and bright, slightly darker in color, bright and beautiful.

[0051] For the preparation of nanowires, the ground silicon wafer can be put into photocatalytic nano-active water, nano-silver is added to the active water, and nanowires can be produced in 4 days under ultraviolet irradiation.

[0052] The preparation of nano-pn junction can be done by putting the ground silicon wafer into photocatalytic nano-active water, adding nano-boron or other nano-materials into the active water, and producing nano-pn junction in 72 hours under ultraviolet irradiation.

[0053] For the preparation of nano-devices, first make a ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for producing nanometer structure with nano-photocatalytic active water. Templates and nanometer materials to be processed are immerged in the nano-photocatalytic active water; under irradiation of ultraviolet, the nanometer materials are deposited on the templates to generate the nanometer structure. Nanometer atom in the active water can be deposited on the templates or a work piece to crank out a nanometer product, thus replacing methods of high temperature, microvacuum, electron beam, laser, and vapor phase, and the like, for producing the nanometer structure. The nanometer structure prepared by the method is compact, well distributed, and is provided with strong bonding force, and is characterized by distinct properties of mechanics, optics, heat exchange, electromagnetic, superconduct, electricity, physics, and chemistry, and the like, particularly, the nanometer structure can be applied to important fields of national defense, military affairs, medical treatment, epidemic situation, industry and agriculture, and has important significance, can be capable of being applied to key technology which can not be solved by current technology. The technical craft is simple and is suitable for industrialized production; the cost is low; the technique can become a technical revolution.

Description

technical field [0001] Involved in the preparation of nanostructures. technical background [0002] At present, the preparation of nanowires, nanomembranes, and nanodevices is still relatively difficult. Some are still in the stage of basic research, and some are in the stage of laboratory products and cannot enter industrial production. For example: the preparation of single crystal silicon oxide nanowires uses high-temperature chemical vapor deposition method, and the high temperature is above 1000 °C; the carbon-assisted growth method also requires high temperatures; Growing silicon oxide nanowires, removing the template agent by roasting or chemical corrosion, and finally obtaining nanowires requires roasting and template agents, which pollute the environment; laser ablation methods require high temperatures; a hydrothermal gas phase using ethylenediamine as a reaction solution Ferric nitrate is used as a synthetic method of supported silicon oxide, which undergoes a se...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B82B3/00
Inventor 张金龙刘丽红
Owner 张金龙
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products