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Preparation method of two-dimensional tungsten sulfide thin film material

A thin film material, tungsten sulfide technology, applied in metal material coating process, gaseous chemical plating, coating, etc., can solve the problem of high preparation temperature and achieve the effect of reducing the reaction temperature

Inactive Publication Date: 2017-08-15
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Using the above method, the preparation temperature is higher, and there are still certain defects

Method used

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  • Preparation method of two-dimensional tungsten sulfide thin film material
  • Preparation method of two-dimensional tungsten sulfide thin film material
  • Preparation method of two-dimensional tungsten sulfide thin film material

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preparation example Construction

[0025] A kind of preparation method of two-dimensional tungsten sulfide film material of the present invention comprises the following process:

[0026] (1) Using a dual temperature field slide rail plasma PECVD system, a certain amount of argon gas is introduced into the quartz tube to remove the air; finally, a certain size of processed SiO 2 The / Si substrate is placed directly above the ship-shaped container with a certain mass of tungsten hexacarbonyl powder, and the container with a certain mass of sulfur powder is placed in the previous temperature zone of the tube furnace, and then the porcelain with tungsten hexacarbonyl powder is placed The boat is placed in the last temperature zone of the tube furnace (the amount of sulfur powder is 500mg, the mass ratio of tungsten hexacarbonyl to sulfur powder is 1-3:100. The mass ratio of 1:100 can get double-layer tungsten disulfide, 3: 100 mass ratio can get three layers of tungsten disulfide). Continue to pass through 10min,...

Embodiment 1

[0029] (1) Vacuumize the tube furnace to 133.29Pa, pass in argon, and remove the air; 2 / Si substrate is placed above the boat-shaped container with tungsten hexacarbonyl powder, put the container with 500mg of sulfur powder in the first heating zone of the tube furnace, and then put the porcelain boat with 5mg of tungsten hexacarbonyl on the tube The second heating zone of the furnace. Continue to pass through 10min, 10 ~ 20sccm of argon.

[0030] (2) The tube furnace was evacuated to 133.29Pa, the power of the plasma generator was set to 100W, and 10 sccm of hydrogen gas was introduced to remove the oxygen in the system. Raise the temperature of the first heating zone to 160°C, and the temperature of the second heating zone to 200°C; keep the two heating zones at the same time during the heating process, and raise the temperature to the corresponding temperature, and the heating time is 20 minutes; complete the heating in both heating zones Finally, change to 10sccm argon,...

Embodiment 2

[0033] (1) Vacuumize the tube furnace to 133.29Pa, pass in argon, and remove the air. After processing SiO 2 / Si substrate is placed above the boat-shaped container with tungsten hexacarbonyl powder, put the container with 500mg of sulfur powder in the first heating zone of the tube furnace, and then put the porcelain boat with 10mg of tungsten hexacarbonyl on the tube The second heating zone of the furnace. Continue to pass through 10min, 10 ~ 20sccm of argon.

[0034] (2) Vacuumize the tube furnace to 133.29Pa, set the power of the plasma generator to 250W, and feed 10 sccm of hydrogen to remove the oxygen in the system. Raise the temperature of the first heating zone to 160°C, and the temperature of the second heating zone to 200°C (keep the two heating zones at the same time during the heating process, and raise the temperature to the corresponding temperature, and the heating time is 20 minutes). After both heating zones have been heated up, switch to 10 sccm argon and...

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Abstract

The invention relates to a preparation method of a two-dimensional tungsten sulfide thin film material; a double temperature field slide rail plasma PECVD system is used to fill a tube furnace with argon; 2 / Si substrate is placed above the container with tungsten hexacarbonyl powder, and the container with sulfur powder is placed in the center of the first heating furnace of the tube furnace; then the container with tungsten hexacarbonyl is placed in the center of the tube furnace The center of the second heating furnace; feed argon; the internal pressure of the tube furnace is emphasized to 133.29Pa, the power of the plasma generator in the plasma generating device is set, and the temperature of the first heating zone is raised to the volatilization temperature of the sulfur powder. The second heating zone is heated up to the volatilization temperature of tungsten hexacarbonyl; after both temperature zones are heated up, the mixed gas of argon and hydrogen is changed; tungsten disulfide is deposited on the substrate, and then lowered to room temperature to obtain a two-dimensional WS 2 film material. The invention reduces the reaction temperature; the two-dimensional sulfur tungsten sulfide thin film has good application in the fields of secondary batteries, field effect transistors and the like.

Description

technical field [0001] The invention relates to a preparation method of a two-dimensional tungsten sulfide thin film material, belonging to the field of semiconductor thin film material preparation. Background technique [0002] At present, the preparation of two-dimensional transition metal chalcogenides mainly focuses on the following aspects: [0003] (1) Sheet / size controllable preparation, improving edge structure. (2) Improve productivity. (3) Improve crystallinity (quality). [0004] At present, for the preparation of transition metal chalcogenides, the chemical vapor deposition method is used for synthesis. Taking molybdenum disulfide as an example, it mainly includes the following routes: (1) Mo sheets of 1 to 5 nm and S element at 500 to The vulcanization reaction is carried out at 1100°C. (2) Through S and MoO 3 Thermal evaporation reaction in a tube furnace to obtain multilayered MoS 2 . (3) Take Mo(CO) 6 and H 2 S was used as raw material to grow MoS by...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/30C23C16/513
CPCC23C16/305C23C16/513
Inventor 冯奕钰郑楠楠封伟
Owner TIANJIN UNIV
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