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Method of preparing gate dielectric film of SiC-based MOS device

A technology of MOS devices and gate dielectrics, applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problem of low carrier mobility, reduce the interface state density, and improve the channel carrier mobility. Effect

Active Publication Date: 2017-08-25
浏阳泰科天润半导体技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Nevertheless, SiC-based MOS power devices have encountered great challenges in the reliability of the gate dielectric layer, electron mobility, etc. The main reason is that the SiO formed by thermal oxidation of the SiC substrate 2 There are more interface states between the layer and the SiC substrate, and the scattering of carriers by the interface states causes the carrier mobility of the MOS device channel to be an order of magnitude lower than that of the SiC bulk material, which requires finding a new method to grow SiO 2 Thin films to reduce interface state density and improve electron mobility and reliability of 4H-SiC-based MOSFET devices

Method used

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  • Method of preparing gate dielectric film of SiC-based MOS device
  • Method of preparing gate dielectric film of SiC-based MOS device
  • Method of preparing gate dielectric film of SiC-based MOS device

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Embodiment 1

[0049] figure 2 It is a flow chart of the method for preparing a SiC-based MOS device gate dielectric film related to Embodiment 1. This embodiment involves Si x N y / SiO 2 gate dielectric layer.

[0050] First, step S101 is performed to clean the SiC substrate. In this embodiment, a 4H-SiC substrate sample is used, and a standard cleaning is performed on the 4H-SiC substrate sample.

[0051] a. Ultrasonic cleaning three times with toluene, acetone and ethanol in sequence, and then rinsed with deionized water.

[0052] b. Soak the rinsed substrate in diluted hydrofluoric acid (hydrogen fluoride: deionized water = 1:3 by volume) for 1 min.

[0053] c. Boil the substrate soaked in hydrofluoric acid in concentrated sulfuric acid for 10 minutes.

[0054] d. Boil the substrate boiled in concentrated sulfuric acid with No. 1 solution and No. 2 solution for 15 minutes, rinse it with deionized water, and dry it with nitrogen gas for use. The No. 1 liquid is a mixture of ammonia...

Embodiment 2

[0062] image 3 It is a flow chart of the method for preparing a SiC-based MOS device gate dielectric film related to the second embodiment, and this embodiment involves SiO 2 gate dielectric layer.

[0063] First, step S201 is performed to clean the SiC substrate. In this embodiment, a 4H-SiC substrate sample is used, and a standard cleaning is performed on the 4H-SiC substrate sample.

[0064] a. Ultrasonic cleaning three times with toluene, acetone and ethanol in sequence, and then rinsed with deionized water.

[0065] b. Soak the rinsed substrate in diluted hydrofluoric acid (hydrogen fluoride: deionized water = 1:3 by volume) for 1 min.

[0066] c. Boil the substrate soaked in hydrofluoric acid in concentrated sulfuric acid for 10 minutes.

[0067] d. Boil the substrate boiled in concentrated sulfuric acid with No. 1 solution and No. 2 solution for 15 minutes, rinse it with deionized water, and dry it with nitrogen gas for use. The No. 1 liquid is a mixture of ammoni...

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Abstract

A method of preparing a gate dielectric film of a SiC-based MOS device comprises the following steps: (a) cleaning a SiC substrate; (b) depositing a SixNy film on the SiC substrate through chemical reaction, chemical vapor deposition or physical vapor deposition; (c) depositing a Si film on the SixNy film (or directly on the SiC substrate) through chemical vapor deposition or physical vapor deposition; (d) oxidizing the Si film into a SiO2 film through low-temperature oxidation and / or oxygen annealing; (e) annealing and cooling the SixNy / SiO2 and a SiO2 gate dielectric layer generated in the steps above; and (f) forming a metal electrode on the gate dielectric layer by sputtering or evaporation, thus forming an MOS device structure.

Description

technical field [0001] The invention relates to a dielectric layer film, in particular to the design and manufacturing process of a gate dielectric film used for SiC-based MOS devices. Background technique [0002] Silicon carbide (SiC) is a wide bandgap semiconductor with excellent performance. It not only has the characteristics of wide bandgap, high thermal conductivity, high breakdown field strength, and high saturation electron drift rate, but also has excellent physical and chemical stability. , strong radiation resistance and mechanical strength. Therefore, SiC can be used to develop high-temperature, high-power, high-frequency power devices. [0003] Nevertheless, SiC-based MOS power devices have encountered great challenges in the reliability of the gate dielectric layer, electron mobility, etc. The main reason is that the SiO formed by thermal oxidation of the SiC substrate 2 There are more interface states between the layer and the SiC substrate, and the scatter...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L21/04
Inventor 张峰申占伟李昀佶温正欣陈彤
Owner 浏阳泰科天润半导体技术有限公司
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