Method of preparing gate dielectric film of SiC-based MOS device

A technology of MOS devices and gate dielectrics, applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problem of low carrier mobility, reduce the interface state density, and improve the channel carrier mobility. Effect

Active Publication Date: 2017-08-25
浏阳泰科天润半导体技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Nevertheless, SiC-based MOS power devices have encountered great challenges in the reliability of the gate dielectric layer, electron mobility, etc. The main reason is that the SiO formed by thermal oxidation of the SiC substrate 2 There are more interface states between the layer and the SiC substrate, and the scattering

Method used

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  • Method of preparing gate dielectric film of SiC-based MOS device
  • Method of preparing gate dielectric film of SiC-based MOS device
  • Method of preparing gate dielectric film of SiC-based MOS device

Examples

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Example Embodiment

[0048] Example one

[0049] figure 2 It is the flow chart of the method for preparing the gate dielectric film of the SiC-based MOS device involved in the first embodiment. This embodiment relates to Si x N y / SiO 2 Gate dielectric layer.

[0050] First, perform step S101 to clean the SiC substrate. In this embodiment, a 4H-SiC substrate sample is used, and the 4H-SiC substrate sample is subjected to standard cleaning.

[0051] a. Wash with toluene, acetone and ethanol three times in sequence, and rinse with deionized water.

[0052] b. Put the washed substrate into diluted hydrofluoric acid (hydrogen fluoride: deionized water = 1:3 by volume) and soak for 1 min.

[0053] c. Put the substrate soaked in hydrofluoric acid into concentrated sulfuric acid and cook for 10 minutes.

[0054] d. Boil the substrate that has been boiled with concentrated sulfuric acid in liquid No. 1 and liquid No. 2 for 15 minutes, rinse it with deionized water, and then dry it with nitrogen for use. The first ...

Example Embodiment

[0061] Example two

[0062] image 3 It is a flowchart of a method for preparing a gate dielectric film of a SiC-based MOS device related to the second embodiment, and this embodiment relates to SiO 2 Gate dielectric layer.

[0063] First, perform step S201 to clean the SiC substrate. In this embodiment, a 4H-SiC substrate sample is used, and the 4H-SiC substrate sample is subjected to standard cleaning.

[0064] a. Wash with toluene, acetone and ethanol three times in sequence, and rinse with deionized water.

[0065] b. Put the washed substrate into diluted hydrofluoric acid (hydrogen fluoride: deionized water = 1:3 by volume) and soak for 1 min.

[0066] c. Put the substrate soaked in hydrofluoric acid into concentrated sulfuric acid and cook for 10 minutes.

[0067] d. Boil the substrate that has been boiled with concentrated sulfuric acid in liquid No. 1 and liquid No. 2 for 15 minutes, rinse it with deionized water, and then dry it with nitrogen for use. The first liquid is a mi...

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Abstract

A method of preparing a gate dielectric film of a SiC-based MOS device comprises the following steps: (a) cleaning a SiC substrate; (b) depositing a SixNy film on the SiC substrate through chemical reaction, chemical vapor deposition or physical vapor deposition; (c) depositing a Si film on the SixNy film (or directly on the SiC substrate) through chemical vapor deposition or physical vapor deposition; (d) oxidizing the Si film into a SiO2 film through low-temperature oxidation and/or oxygen annealing; (e) annealing and cooling the SixNy/SiO2 and a SiO2 gate dielectric layer generated in the steps above; and (f) forming a metal electrode on the gate dielectric layer by sputtering or evaporation, thus forming an MOS device structure.

Description

technical field [0001] The invention relates to a dielectric layer film, in particular to the design and manufacturing process of a gate dielectric film used for SiC-based MOS devices. Background technique [0002] Silicon carbide (SiC) is a wide bandgap semiconductor with excellent performance. It not only has the characteristics of wide bandgap, high thermal conductivity, high breakdown field strength, and high saturation electron drift rate, but also has excellent physical and chemical stability. , strong radiation resistance and mechanical strength. Therefore, SiC can be used to develop high-temperature, high-power, high-frequency power devices. [0003] Nevertheless, SiC-based MOS power devices have encountered great challenges in the reliability of the gate dielectric layer, electron mobility, etc. The main reason is that the SiO formed by thermal oxidation of the SiC substrate 2 There are more interface states between the layer and the SiC substrate, and the scatter...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L21/04
Inventor 张峰申占伟李昀佶温正欣陈彤
Owner 浏阳泰科天润半导体技术有限公司
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