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nico2s4 nanometer material and preparation method thereof

A nanomaterial and nanosheet technology, applied in the field of nanomaterials, can solve the problems of high cost, high energy consumption, complicated process, etc., and achieve the effects of being conducive to industrialized production, large specific surface area, and cost reduction.

Inactive Publication Date: 2019-03-12
GUANGDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these preparation technologies have defects such as cumbersome process, high cost, large energy consumption, or long reaction time to varying degrees, which are not only unfavorable for realizing large-scale industrialization, but also have unstable structures and poor controllability.

Method used

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  • nico2s4 nanometer material and preparation method thereof
  • nico2s4 nanometer material and preparation method thereof
  • nico2s4 nanometer material and preparation method thereof

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preparation example Construction

[0055] The invention provides a NiCo 2 S 4 The preparation method of nanometer material is characterized in that, comprises the following steps:

[0056] A) After mixing the soluble cobalt source, the soluble nickel source, urea and the solvent, a reaction precursor solution is obtained;

[0057] B) Place the conductive substrate in the reaction precursor solution obtained in the above steps, react under the action of microwaves, and then undergo heat treatment to obtain NiCo 2 o 4 Nanosheets;

[0058] C) the NiCo obtained by the above steps 2 o 4 After the nanosheets react with sulfide again, NiCo 2 S 4 nanomaterials.

[0059] The invention firstly mixes soluble cobalt source, soluble nickel source, urea and solvent to obtain reaction precursor liquid.

[0060] The present invention has no special restrictions on the soluble cobalt source, and the soluble cobalt source well known to those skilled in the art can be used. Those skilled in the art can select and adjust ...

Embodiment 1

[0107] FTO conductive glass cleaning steps: Put the FTO conductive glass and the three-neck flask into acetone, absolute ethanol and deionized water respectively for ultrasonic cleaning for 15 minutes, and then dry them.

[0108] Weigh cobalt nitrate hydrate (Co(NO 3 ) 2 ·6H 2 O)0.88g, nickel nitrate hydrate (Ni(NO 3 ) 2 ·6H 2 O) 0.44g, the mass ratio of the two remains 2:1, urea (H 2 NCONH 2 ) 0.90g, dissolved in 100ml deionized water, stirred by magnetic force for 30 minutes until fully dissolved, then first put the FTO conductive glass conductive side down into the three-necked flask, then slowly pour the above reaction precursor into the three-necked flask, and put The three-necked flask was placed in a microwave oven for constant temperature reaction at constant power. The reaction power was 700W, the reaction temperature was 90°C, and the reaction time was 30 minutes. After the constant temperature reaction was completed, the FTO conductive glass with the product d...

Embodiment 2

[0123] FTO conductive glass cleaning steps: Put the FTO conductive glass and the three-neck flask into acetone, absolute ethanol and deionized water respectively for ultrasonic cleaning for 15 minutes, and then dry them.

[0124] Weigh cobalt nitrate hydrate (Co(NO 3 ) 2 ·6H 2 O)0.88g, nickel nitrate hydrate (Ni(NO 3 ) 2 ·6H 2 O) 0.44g, the mass ratio of the two remains 2:1, urea (H 2 NCONH 2 ) 0.90g, dissolved in 100ml deionized water, stirred by magnetic force for 30 minutes until fully dissolved, then first put the FTO conductive glass conductive side down into the three-necked flask, then slowly pour the above reaction precursor into the three-necked flask, and put The three-necked flask was placed in a microwave oven for a constant temperature reaction at a constant power. The reaction power was 800W, the reaction temperature was 100°C, and the reaction time was 2 hours. After the constant temperature reaction was completed, the FTO conductive glass with the product...

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Abstract

The invention provides a preparation method of a NiCo2S4 nano-material. The preparation method comprises the following steps: firstly, mixing a soluble cobalt source, a soluble nickle source, urine and a solvent to obtain a reaction precursor solution; then placing a conductive substrate in the obtained reaction precursor solution, performing reaction under the microwave action, and then performing heat treatment to obtain a NiCo2O4 nanosheet; and enabling reaction between the obtained NiCo2O4 nanosheet and a sulfide to obtain the NiCo2S4 nano-material. The preparation method is simple in process, low in cost and energy consumption, short in reaction time, and favorable for large-scale industrial expansion; the NiCo2S4 semiconductor nanosheet is uniform in shape and large in specific area; controllable growth of a nano-structure thin film can be realized, so that full contact with an electrolyte is realized; quick ion diffusion and effective charge transmission are guaranteed; the NiCo2S4 nano-materia can be directly used as a counter electrode of a dye-sensitized solar cell and has a huge application prospect.

Description

technical field [0001] The invention relates to the technical field of nanomaterials, and relates to a ternary transition metal sulfide nanomaterial and its preparation method and application, in particular to a NiCo 2 S 4 Nanomaterials and their preparation methods and applications. Background technique [0002] In recent years, nanomaterials have developed vigorously. Since its size is close to the coherence length of electrons, its properties have changed greatly due to the self-organization brought about by strong coherence. Therefore, the properties exhibited by it, such as melting point, magnetism, optics, thermal conductivity, electrical conductivity, etc., are often different from those exhibited by the substance in its bulk state. [0003] Among them, compound semiconductor nanomaterials, due to the photoelectric properties of compound semiconductors themselves, combined with nanoscale structures, will have many more special properties, which has attracted extensi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G53/00B82Y40/00H01G9/20H01G9/042
CPCY02E10/542
Inventor 刘俊刘康乐李成辉魏爱香招瑜肖志明
Owner GUANGDONG UNIV OF TECH
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