Ordered Pt-TiO2/InP nanowire array electrode material applied to hydrogen production through water decomposition and preparation method of material

A nanowire array, photo-splitting water hydrogen production technology, applied in electrodes, metal material coating process, electrolysis process, etc., can solve the problems of poor photochemical stability, narrow band gap, high carrier mobility, and save energy. Material, good photochemical stability

Active Publication Date: 2017-09-01
HEFEI UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The III-V semiconductor InP has the characteristics of narrow band gap (Eg≈1.35eV), wide absorption range of sunlight, and high carrier mobility, and its conduction band position is higher than that of H 2 / H 2 O potential is more negative, but less photochemically stable

Method used

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  • Ordered Pt-TiO2/InP nanowire array electrode material applied to hydrogen production through water decomposition and preparation method of material
  • Ordered Pt-TiO2/InP nanowire array electrode material applied to hydrogen production through water decomposition and preparation method of material

Examples

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Embodiment 1

[0033] Using nanoimprinting and MOCVD technology to realize the controlled growth of large-area periodic and ordered InP nanowire arrays, further using ALD and electron beam evaporation technology to successively deposit nano-TiO on the surface of InP nanowires 2 Protective layer and Pt co-catalyst layer, a new type of high-performance ordered Pt-TiO applied to photolysis of water for hydrogen production 2 / InP nanowire array electrode material, the specific preparation steps are as follows:

[0034] 1. Select the InP(111)A substrate as the substrate, and use the plasma enhanced chemical vapor deposition method to deposit a layer of SiO with a thickness of 30nm on the surface of the InP(111)A substrate. 2 .

[0035] 2. Using nanoimprint technology to obtain a large-area periodic and ordered hole structure on the surface of the InP substrate, the specific preparation process steps are as follows:

[0036] SiO on the substrate surface by spin-coating 2 Coat PMMA (polymethyl m...

Embodiment 2

[0045] The preparation method of this embodiment is the same as that of Example 1, except that the SiO deposited by PECVD is used in step 1. 2 The thickness is 40nm, and the 1% HF etching time in step 2 is 80s, that is, the SiO on the surface of the InP(111)A substrate 2 After increasing the layer thickness, for SiO on InP substrate 2 layer to obtain the pore structure characteristics required for epitaxial growth, the HF etching time also needs to be extended accordingly. Ordered Pt-TiO obtained by this preparation method 2 The performance, efficiency and photochemical stability of the / InP nanowire array electrode material are basically consistent with the results of Example 1.

Embodiment 3

[0047] The preparation method of this example is the same as that of Example 1, except that the template parameters used in the nanoimprinting technology in Step 2 are adjusted to 100 nm in pore size, the same pore depth, and 400 nm in distance between holes. This fabrication method adjusts the microstructural parameters (including diameter, spacing, length, etc.) 2 / InP nanowire array electrode material's specific surface area size, light absorption performance, photo-splitting water hydrogen production performance and efficiency. The Pt-TiO prepared in this example 2 The initial voltage of the photocurrent of the / InP nanowire array electrode material is basically unchanged, the performance and efficiency of hydrogen production by photolysis of water are reduced, and the saturated photocurrent density is 21.5mA / cm 2 , the energy conversion efficiency is 5.33%, and the photochemical stability is good.

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Abstract

The invention discloses an ordered Pt-TiO2/InP nanowire array electrode material applied to hydrogen production through water decomposition and a preparation method of the material, and belongs to the technical fields of design and preparation of new energy materials and energy conversion and application. Firstly, periodical orderly arranged InP nanowire arrays are prepared through nanometer impression in combination with the metal organic chemical vapor deposition technology; and a TiO2 protection layer and Pt promoter layer are deposited on the surfaces of InP nanowires in sequence through the atomic layer deposition and electron beam evaporation technologies. The saturated photocurrent density of the prepared ordered Pt-TiO2/InP nanowire array electrode material can reach 27.7 mA/cm<2> under the standard simulated sunlight illumination condition, the energy conversion efficiency can be up to 6.9%, and the stability is good. The process is simple, easy to implement and environmentally friendly, large-area preparation of the electrode material can be achieved, and engineering application and popularization are facilitated.

Description

technical field [0001] The invention relates to the technical fields of design and preparation, energy conversion and application of new energy materials, and in particular relates to an ordered Pt-TiO used in photolysis of water to produce hydrogen 2 / InP nanowire array electrode material and preparation method thereof. Background technique [0002] With the deterioration of energy consumption and environmental pollution, the development of new clean energy is an important way to deal with this crisis. Due to its abundant reserves, good combustion performance, light weight, and no pollution, hydrogen energy has become an efficient and clean energy that is most likely to replace fossil fuels. Since the Japanese scientists Fujishima and Honda first discovered the semiconductor TiO in 1972 2 Since the photolysis of water to produce hydrogen, how to efficiently use solar energy to realize the photolysis of water to produce hydrogen from semiconductor materials has become a re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25B11/06C25B1/04C23C16/40C23C16/30C23C14/18C23C16/455C23C14/30
CPCC23C14/18C23C14/30C23C16/301C23C16/402C23C16/405C23C16/455C25B1/04C25B1/55C25B11/093Y02E60/36
Inventor 刘家琴李子园崔接武张勇傅岚哈克·霍·坦成努帕提·贾格迪什吴玉程
Owner HEFEI UNIV OF TECH
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