Cellulose base flexible zinc oxide ultraviolet photoelectric detector and preparation method therefor
An electric detector, zinc oxide technology, applied in the field of cellulose-based flexible zinc oxide ultraviolet photodetector and its preparation, can solve environmental pollution and other problems, achieve the effects of reducing environmental pollution, rich sources, and alleviating the shortage of oil resources
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Embodiment 1
[0031] See attached figure 2 , with a high-haze (75%) transparent cellulose film 1 as the substrate, the preparation method can be found in the literature (Ming-ChunHsieh, Hirotaka Koga, Katsuaki Suganuma and Masaya Nogi, Scientific Reports, 2017, 7:41590), using magnetic Controlled sputtering growth of zinc oxide semiconductor film: using zinc oxide ceramic target as the target material, put the transparent cellulose film substrate with high haze into the magnetron sputtering chamber, and use the mechanical pump and molecular pump to evacuate the vacuum chamber. Background pressure less than 1×10 -4 When the pressure was Pa, high-purity argon gas was introduced, and when the pressure of the sputtering chamber was adjusted to 2 Pa, the growth of the zinc oxide semiconductor film was started, and the sputtering power was 100 W, and it was prepared on a transparent cellulose film 1 substrate with high haze. A zinc oxide semiconductor thin film 2 was obtained with a thickness ...
Embodiment 2
[0034] See attached figure 2 , with a high-haze (75%) transparent cellulose film 1 as the substrate, the preparation method can be found in the literature (Ming-ChunHsieh, Hirotaka Koga, Katsuaki Suganuma and Masaya Nogi, Scientific Reports, 2017, 7:41590), using magnetic Controlled sputtering growth of zinc oxide semiconductor film: using zinc oxide ceramic target as the target material, put the transparent cellulose film substrate with high haze into the magnetron sputtering chamber, and use the mechanical pump and molecular pump to evacuate the vacuum chamber. Background pressure less than 1×10 -4 When the pressure was Pa, high-purity argon gas was introduced, and when the pressure of the sputtering chamber was adjusted to 2 Pa, the growth of the zinc oxide semiconductor film was started, and the sputtering power was 100 W, and it was prepared on a transparent cellulose film 1 substrate with high haze. A zinc oxide semiconductor thin film 2 was obtained with a thickness ...
Embodiment 3
[0037] See attached figure 2 , using transparent cellulose film 1 with high haze (80%) as the substrate, and its preparation method can be found in the literature (Ming-ChunHsieh, Hirotaka Koga, Katsuaki Suganuma and Masaya Nogi, Scientific Reports, 2017, 7:41590), using magnetic Controlled sputtering growth of zinc oxide semiconductor film: using zinc oxide ceramic target as the target material, put the transparent cellulose film substrate with high haze into the magnetron sputtering chamber, and use the mechanical pump and molecular pump to evacuate the vacuum chamber. Background pressure less than 1×10 -4 When the pressure was Pa, high-purity argon gas was introduced, and when the pressure of the sputtering chamber was adjusted to 2 Pa, the growth of the zinc oxide semiconductor film was started, and the sputtering power was 100 W, and it was prepared on a transparent cellulose film 1 substrate with high haze. A zinc oxide semiconductor thin film 2 was obtained with a th...
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