GaN-based light-emitting diode epitaxial slice and growth method thereof

Abstract

The invention discloses a GaN-based light-emitting diode epitaxial slice and a growth method thereof, and belongs to the field of the light-emitting diode. The light-emitting diode epitaxial slice comprises a substrate, and a low-temperature buffer layer, a high-temperature buffer layer, a undoped GaN layer, a N-type layer, a light-emitting layer MQW and a P-type layer which are orderly stacked on the substrate, wherein the high-temperature buffer layer is a stacked structure formed through alternative growth of the undoped InGaN layer and the magnesium-doped InGaN layer, the number of the undoped InGaN layer is n, and the number of the magnesium-doped InGaN layer is n-1, and n is more than 2 and is an integer. By doping the magnesium in the high-temperature buffer layer, the high-temperature buffer layer is mainly in three-dimensional growth mode, the magnesium is beneficial to the three-dimensional growth, the defect is reduced, and the crystal quality of the material is improved; by adding a little indium impurity in the high-temperature buffer layer, the dislocation number can be effectively reduced, the defect is reduced, the crystal quality of the material is improved, thereby improving the inner quantum efficiency and the anti-static electricity capacity of the light-emitting diode.

Description

technical field [0001] The invention relates to the field of light-emitting diodes, in particular to a gallium nitride-based light-emitting diode epitaxial wafer and a growth method thereof. Background technique [0002] Semiconductor light-emitting diodes represented by gallium nitride have excellent characteristics such as large band gap, high electron saturation electron drift speed, high temperature resistance, and high power capacity. [0003] The existing method for preparing the epitaxial layer of GaN-based light-emitting diodes is mainly to grow the epitaxial material on the substrate. The existing gallium nitride-based epitaxy is mainly heteroepitaxy. The substrate material is different from the epitaxy material, and usually has the problem of large lattice mismatch, making it difficult to grow high-quality epitaxial layers. At present, the main method used is to first form a three-dimensional island-like structure grain on the substrate by a low-temperature and lo...

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Problems solved by technology

[0005] Since the existing buffer layer adopts a three-dimensional growth mode, and the existing growth conditions are mostly low-temperature and low-pressure growth, the low-temperature and low-pressure growth conditions are likely to cause lattice defects such as edge dislocations and screw dislocations. Difficult to eliminate, dislocations pass through the undoped GaN layer, N-type layer to the light-emitting layer MQW

When the forward current passes, the electrons in the N-type layer and the holes in the P-type layer are confined in the quantum well layer to recombine and emit light, and the dislocation defect will lead to a decrease in the internal quantum efficiency.

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