Black phosphorus crystal with high photoelectric response rate as well as preparation method and application thereof

A photoelectric response and photoresponse technology, which is applied in the preparation of phosphorus, crystal growth, chemical instruments and methods, etc., can solve the problem of uncontrollable carrier concentration, and achieve the effects of low cost, simple method and high yield.

Active Publication Date: 2017-10-24
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current black phosphorus mostly exhibits p-type conductivity, n-type deficiency, and the carrier concentration cannot be adjusted.

Method used

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  • Black phosphorus crystal with high photoelectric response rate as well as preparation method and application thereof
  • Black phosphorus crystal with high photoelectric response rate as well as preparation method and application thereof
  • Black phosphorus crystal with high photoelectric response rate as well as preparation method and application thereof

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preparation example Construction

[0029] Another aspect of the embodiments of the present invention provides a black phosphorus crystal with high photoelectric responsivity, the preparation method of which comprises:

[0030] providing a growth precursor, the growth precursor comprising red phosphorus, a mineralizer and a doping element in a mass ratio of (100-600):(10-100):(0.1-10);

[0031] Place the growth precursor in a sealed reaction vessel whose inner cavity is a vacuum environment, and heat the reaction vessel from room temperature to 600-850°C within 1-3 hours, and keep it warm for 1-3 hours , and then lowered to 450-550°C within 1-24 hours, and kept warm for 1-12 hours, then cooled to 100-200°C within 1-4 hours, and then cooled to room temperature within 1-3 hours, and finally formed A black phosphorus crystal with high photoelectric responsivity, the black phosphorus crystal is a single crystal, the space point group Cmca (no.64), and the unit cell parameter is Layer spacing

[0032] Further, t...

Embodiment 1

[0054] Embodiment 1: This embodiment relates to a preparation method of selenium-doped black phosphorus crystals, comprising:

[0055] Put the precursor red phosphorus, tin, copper and selenium into the quartz tube according to the mass ratio of (550~600):(10~20):(20~40):(0.1~0.5), and vacuum seal the quartz tube Tube. Then place the quartz tube horizontally in a tube furnace to heat and grow. The specific process includes: rising from room temperature to 850°C within 3 hours, and keeping it for 1 hour, and then cooling down to 450°C within 24 hours, and keeping it for 6 hours. , and then cooled down to 100° C. within 3 hours, then down to room temperature within 1 hour, and finally black phosphorus crystals were obtained. A photo of one of the typical black phosphorus crystal products can be found in figure 1 , whose Raman spectrum can be found in figure 2 , so it can be verified that the crystal is selenium-doped black phosphorus. see again image 3 is the transmission...

Embodiment 2

[0059] Embodiment 2: This embodiment relates to a method for preparing sulfur-doped black phosphorus crystals, including:

[0060] Put the precursor red phosphorus, tin, tin iodide, and sulfur into the quartz tube according to the mass ratio of (100-150): (60-80): (30-40): (0.1-2), and put the quartz tube Vacuum seal the tube. Then place the quartz tube horizontally in a tube furnace to heat and grow. The specific process includes: rising from room temperature to 600°C within 1 hour, and keeping it for 3 hours, and then cooling down to 500°C within 12 hours, and keeping it for 12 hours. , followed by cooling down to 150° C. within 1 hour, and then cooling down to room temperature within 2 hours, finally forming the black phosphorus crystals. Finally, black phosphorus crystals are obtained, in which the sulfur doping amount is about 0.2 wt% on average.

[0061] On the basis of the aforementioned sulfur-doped black phosphorus crystals, a two-dimensional black phosphorus semico...

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Abstract

The invention discloses a black phosphorus crystal with a high photoelectric response rate as well as a preparation method and application thereof. The black phosphorus crystal with the high photoelectric response rate is a monocrystal, with a space point group Cmca (no.64); lattice parameters are as follows: a=3.2 to 3.4 angstroms, b=10.4 to 10.6 angstroms, c=4.3 to 4.5 angstroms, and interlamellar spacing=4 to 6 angstroms. The preparation method comprises the following steps: placing a growth precursor containing red phosphorus, a mineralizer and a doping element into a sealed reaction container, of which an inner cavity is in a vacuum environment, and performing heating, heat preservation and cooling on the reaction container in sequence, thus growing and forming the black phosphorus crystal. A carrier type and a carrier concentration of the black phosphorus crystal provided by the invention can be adjusted; the black phosphorus crystal can show an extremely high photoelectric response rate without subsequent modification; moreover, the preparation method is simple, low in cost, low in pollution, high in yield, high in product crystallinity and uniform in doping; and the black phosphorus crystal has a wide application prospect in the field of photoelectronic devices.

Description

technical field [0001] The invention relates to a photoelectric material, in particular to a doped black phosphorus crystal with high photoelectric responsivity and adjustable semiconductor type and its preparation method and application, such as the application in the preparation of photodetectors. Background technique [0002] Black phosphorus is a new type of two-dimensional atomic crystal material with high carrier mobility (~1000cm 2 / Vs) and on / off ratio (>10 5 ), and tunable direct bandgap (0.3—2eV) and other excellent performances, which make up for the performance defects of graphene’s zero bandgap and transition metal chalcogenides (TMDs) low carrier mobility, which is the next step after graphene Another two-dimensional material that excites the semiconductor technology and industry, especially in the development and application of new optoelectronic devices, such as: high-performance photodetectors, optical waveguides, mode-locked lasers, modulators, polarize...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B25/02C30B29/02C30B7/00H01L31/09
CPCC01B25/02C30B7/00C30B29/02H01L31/09
Inventor 张凯张跃钢徐轶君
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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