Device and method for preparing two-dimensional transmission metal dichalcogenide (TMDC) atom crystal material under normal pressure

A technology of crystal materials and atoms, which is applied in the field of devices for preparing two-dimensional TMDC atomic crystal materials, can solve the problems of source material loss, discontinuity, poor repeatability, etc., and achieve the effect of saving resources and costs and improving reaction efficiency

Active Publication Date: 2017-11-07
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Aiming at the above-mentioned deficiencies in the prior art, the present invention provides a device and method for preparing two-dimensional TMDC atomic crystal materials under normal pressure, which can effectively so

Method used

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  • Device and method for preparing two-dimensional transmission metal dichalcogenide (TMDC) atom crystal material under normal pressure
  • Device and method for preparing two-dimensional transmission metal dichalcogenide (TMDC) atom crystal material under normal pressure
  • Device and method for preparing two-dimensional transmission metal dichalcogenide (TMDC) atom crystal material under normal pressure

Examples

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Example Embodiment

[0038] Example 1

[0039] The method for preparing a single wafer of tungsten disulfide in the order of 100 microns includes the following steps: placing tungsten trioxide (500 mg) in a carrier boat 2 in the quartz high-temperature tube furnace 11 so that the tungsten trioxide is located in the center of the tube furnace In the constant temperature zone, place the sulfur powder (1.5g) in the carrier-3 in the high-temperature tube furnace 11 so that it is located at the upstream position of the airflow. The sulfur powder can be heated separately by the heater-5, and the sapphire substrate 7 Placed in the sulfur vapor main transport pipe 1 of the high-temperature tube furnace 11, 20mm below the tungsten source vapor outlet, and pass 25sccm and 100sccm argon into the main transport pipe 1 and the secondary transport pipe 2, respectively The gas is used as the carrier gas, and the gas outlet end of the high-temperature tube furnace 11 is passed into the exhaust gas treatment device 1...

Example Embodiment

[0043] Example 2

[0044] The method of preparing a single-layer continuous tungsten disulfide atomic layer film includes the following steps: placing tungsten trioxide (300 mg) in a carrier boat 2 in the quartz high-temperature tube furnace 11, and placing the tungsten trioxide in the center of the tube furnace In the constant temperature area, place the sulfur powder (1.2g) in the carrier-3 in the high-temperature tube furnace 11 so that it is located at the upstream position of the airflow. The sulfur powder can be heated by heater-5 alone; the sapphire substrate 7 Placed in the sulfur vapor main conveying pipe 1 of the high temperature tube furnace, it is located 20mm below the tungsten source vapor outlet, and 30sccm argon gas is passed into the main conveying pipe 1 as the carrier gas, and the secondary conveying pipe In 2, a mixed gas of 120 sccm argon and 10 sccm hydrogen is passed as carrier gas, and the outlet end of the high-temperature tube furnace 11 is passed into t...

Example Embodiment

[0048] Example 3

[0049] The method for preparing a multi-layer continuous molybdenum disulfide atomic layer film includes the following steps: placing molybdenum trioxide (500 mg) in the carrier boat 2 in the quartz high-temperature tube furnace 11, and placing the molybdenum trioxide in the tube furnace In the central constant temperature area, put sulfur powder (1.8g) in the carrier-3 in the high-temperature tube furnace 11 so that it is located at the upstream position of the airflow. The sulfur powder can be heated separately by heater-5, and the sapphire substrate 7 Placed in the sulfur vapor main conveying pipe 1 of the high temperature tube furnace 11, it is located 20mm below the tungsten source vapor outlet, and 30sccm argon gas is introduced into the main conveying pipe 1 and the secondary conveying pipe 2 respectively. Carrier gas, a mixed gas of 120sccm argon and 10sccm hydrogen is passed into the secondary transport pipe 2 as the carrier gas, and the outlet end of ...

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Abstract

The invention discloses a device and a method for preparing a two-dimensional transmission metal dichalcogenide (TMDC) atom crystal material under normal pressure. The device comprises a high-temperature tube furnace having an embedded type double-tube structure, wherein a main conveying tube and a secondary conveying tube are arranged on the high-temperature tube furnace, the secondary conveying tube is embedded into the main conveying tube, a first carrying boat is arranged in the main conveying tube, a second carrying boat is arranged in the secondary conveying tube, a supporting frame is arranged at the outlet position of the secondary conveying tube, a lining is arranged on the supporting frame, a first heater for heating matters in the first carrying boat and a second heater for heating matters in the second carrying boat are arranged on an outer wall of the high-temperature tube furnace, and a waste gas treating device is arranged at the outlet position of the high-temperature tube furnace. The device can be used for preparing discontinuous TMDC single crystal wafers or single-layer and multi-layer continuous TMDC films. Furthermore, the device has good repeatability and saves raw materials.

Description

technical field [0001] The invention belongs to the technical field of two-dimensional TMDC atomic crystals, and in particular relates to a device and method for preparing two-dimensional TMDC atomic crystal materials under normal pressure. Background technique [0002] The emergence of new semiconductor materials promotes the upgrading of the entire information electronic devices and systems. Transition metal dichalcogenide (TMDC) semiconductors represented by molybdenum disulfide layered crystals, because of their high on-off ratio, medium carrier mobility, adjustable band gap with thickness, and ultra-high specific surface area, As well as the characteristics of excellent mechanical properties, it has broad application prospects in the fields of transistors, photodetectors, and sensors. The development and application of these devices depend on high-quality (controllable layer number, uniform large area, wafer scale, low defect density) two-dimensional materials. Atmosp...

Claims

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Application Information

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IPC IPC(8): C30B29/64C30B29/46C30B25/02C30B30/04
CPCC30B25/02C30B29/46C30B29/64C30B30/04
Inventor 李春何天应兰长勇
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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