A kind of epitaxial processing method of 395nm short wavelength ultraviolet LED structure
A technology of LED structure and processing method, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as narrow growth temperature window, interface degradation, and reduction of quantum efficiency in quantum wells, and achieve low defect density, uniform composition, Enhances the effect of the confinement effect
Active Publication Date: 2019-05-10
NANJING UNIV +1
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Therefore, the growth temperature window of the AlInGaN material MOCVD co-doped film process is relatively narrow, and it is difficult to effectively improve the doping efficiency of In atoms and avoid phase separation.
[0006] 2. The spatial component (strain) fluctuation and component traction effect of AlInGaN material will become more significant as the thickness of the material increases, resulting in the deterioration of the surface morphology of the material and the formation of hexagonal pit V-shaped defects
3. The epitaxial quality of the heterostructure interface between AlInGaN and InGaN is difficult to control, and the huge difference in growth conditions leads to component deviation and interface degradation, thereby reducing the internal quantum efficiency of the quantum well
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[0030] 1. Production equipment and materials:
[0031] 1. Satellite disk type 2-inch 11-chip metal organic chemical vapor deposition MOCVD preparation system.
[0032] 2. Metal-organic MO growth sources: trimethylgallium (TMGa), triethylgallium (TEGa), trimethylaluminum (TMAl), and trimethylindium (TMIn) were used as gallium, aluminum, Metal MO source of indium element.
[0033] 3. Ammonia (NH) 3 ) as a nitrogen source.
[0034] 4. The MO source inlet auxiliary gas path: the growth source and the auxiliary gas path are input into the MOCVD reaction chamber through independent pipes and systems.
[0035] 2. Production process steps of epitaxial wafer with 395nm short wavelength UV LED structure:
[0036] 1. The GaN support layer is grown by a two-step growth method. First, the MOCVD system is in H 2 Under the environment, the C-plane sapphire substrate 1 was baked in a high temperature environment of 1100 °C, and then cooled to 520 °C to grow a GaN buffer nucleation buffer...
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The invention discloses an epitaxial processing method for a 395nm short-wavelength UV LED structure, and belongs to the technical field of semiconductors. The epitaxial processing method comprises the steps of sequentially epitaxially growing a buffer layer, a GaN layer, an InGaN insertion layer, an AlInGaN superlattice template layer and an InGaN / AlInGaN multiple-quantum well (MQW) structure on a substrate, wherein the AlInGaN superlattice template layer is formed by growing 20 layers of short-period InGaN / AlGaN superlattice structure layers; and when growing an InGaN / AlxInyGa1-X-YN MQW structure layer, first growing an AlxInyGa1-X-YN superlattice barrier layer on the AlInGaN superlattice template layer, then growing an InGaN potential well layer on the AlxInyGa1-X-YN superlattice barrier layer, and alternately growing the AlxInyGa1-X-YN superlattice barrier layers and the InGaN potential well layers until finally the AlxInyGa1-X-YN superlattice barrier layer is grown. The internal quantum efficiency of the LED quantum well structure in the invention is improved more than three times.
Description
technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a gallium nitride (GaN)-based group III nitride thin film material and an epitaxial process of an LED multi-quantum well structure. Background technique [0002] In recent years, light-emitting diode (LED) devices have been widely used in the field of lighting, but the polarization effect of the GaN-based nitride material system and the high-quality fabrication of multiple quantum well structures in the LED active layer still restrict the internal quantum efficiency of LED devices. . [0003] Studies have shown that compared with the traditional InGaN / GaN multiple quantum well structure, the use of quaternary alloy Al x In y Ga 1-x-y Substituting N for GaN as a barrier layer material for quantum wells can effectively improve the optoelectronic properties of LED devices. The quaternary alloy AlInGaN material has the following advantages: 1. Changing the comp...
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IPC IPC(8): H01L33/04H01L33/06H01L33/00
CPCH01L33/0075H01L33/04H01L33/06
Inventor 徐峰陈鹏高峰汤文景张琳华雪梅
Owner NANJING UNIV