Ultraviolet photodetector and preparation method based on single twin structure gan nanowire

Abstract

The invention belongs to the field of photoelectric detectors and specifically relates to a single root twin structure GaN nano wire-based ultraviolet light photoelectric detector and a preparation method therefor. The detector comprises an Si substrate, an SiO2 insulating layer, a single root twin structure GaN nano wire on the insulating layer and metal electrodes covering two ends of the singleroot twin structure GaN nano wire that are orderly arranged from bottom to top. The twin structure GaN nano wire in the ultraviolet light photoelectric detector is high in specific surface area, andseparation and rapid transport of photo-generated carriers can be effectively realized via a twin structure; high optical responsivity, external quantum efficiency and photoelectric current gains canbe achieved. More importantly, the ultraviolet light photoelectric detector is high in selectivity concerning ultraviolet light in a UV-A wave band. The ultraviolet light photoelectric detector is simple in manufacture technology, low in cost, high in sensitivity and stable in performance.

Description

technical field [0001] The invention belongs to the field of photodetectors, in particular to an ultraviolet photodetector based on a single twinned structure GaN nanowire and a preparation method thereof. Background technique [0002] One-dimensional semiconductor nanowires are considered to be the most promising basic units for building high-performance nano-optoelectronic devices due to their large specific surface area, small feature size, ultra-high light absorption efficiency, and excellent crystal quality. One-dimensional semiconductor nanowires are widely used in many fields such as solar cells, field effect transistors, nanogenerators, and photodetectors. Among these semiconductor devices, ultraviolet photodetectors have received widespread attention because of their applications in important technical fields such as missile tracking, binary switches, safety communications, flame alarms, environmental pollution detection, and future information storage. [0003] Ba...

AI Technical Summary

Problems solved by technology

However, ultraviolet photodetectors based on GaN nanomaterials still have disadvantages such as complex preparation, poor wavelength selectivity, low photoresponsivity and external quantum efficiency, and are difficult to industrialize.

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