A titanium nitride atomic layer deposition device and its deposition method

A technology of atomic layer deposition and titanium nitride, which is applied in the direction of coating, gaseous chemical plating, metal material coating process, etc., can solve the problems of polluting the substrate surface, not being effective, and having no heating function, so as to avoid gas Effects of handling system settings, reducing undesired reactions, and reducing particle generation
CN107868944BActive Publication Date: 2020-02-07BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
Publication Date
2020-02-07

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Abstract

The invention discloses a titanium nitride atomic layer deposition device and a deposition method thereof. According to the deposition method thereof, segmented gradient heat-up heating is carried outon a source bottle outlet pipeline and a titanium precursor conveying pipeline, segmented gradient heat-down heating is carried out on a front-stage pipeline, an oxidant blowing pipeline is directlyconnected into a vacuum pump without passing through a chamber, during the ALD reaction, a preprocessing before the process is carried out through the operation that the flow ratio between an oxidizing agent and a titanium precursor vapor is improved, the chamber and the pipeline are vacuumized for multiple times, so that the generation of particles in the chamber, especially in the front-stage pipeline can be reduced, the maintenance period of the vacuum pump can be prolonged, and the service life can be prolonged; residuals of the precursor and the oxidizing agent on the wall of the pipelineand in the cavity can be effectively removed, the occurrence of unexpected reactions is reduced, and the impurity pollution is reduced; and purity of a thin film can be improved, and a complex gas processing system is prevented from being arranged.
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Description

technical field

[0001] The invention relates to the technical field of semiconductor processing, and more specifically, to a titanium nitride atomic layer deposition device and a deposition method thereof. Background technique

[0002] Titanium nitride (TiN) is used as a coating for cutting tools because of its high hardness, high melting point, and good thermal and chemical stability. Moreover, titanium nitride has become a multi-purpose material in the IC field due to its good electrical conductivity, good thermal stability and mechanical properties of the film. Such as applied to Cu diffusion barrier (copper diffusion barrier), CMOS diodes and gate electrodes of DRAM capacitor components, etc.

[0003] PVD and CVD methods are the main methods for depositing TiN thin films. However, studies have shown that compared with TiN films deposited by PVD and CVD methods, TiN films deposited by atomic layer deposition (ALD) have better step coverage. Especially with the reductio...

Claims

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