Quantum dot light emitting diode based on yttrium-doped zinc oxide electron transport layer and preparation method thereof

A technology of yttrium-doped zinc oxide and electron transport layer, which is applied in the field of quantum dot light-emitting diodes and its preparation, to achieve the effects of promoting research and development, improving luminous efficiency, and realizing simple and feasible processes

Inactive Publication Date: 2018-06-19
GUANGZHOU INST OF ENERGY CONVERSION - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In recent years, there have been some reports on the modification of zinc oxide nanoparticles. These reports generally focus on the scientific research of nanoparticle size control or alloy methods, and the ...

Method used

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  • Quantum dot light emitting diode based on yttrium-doped zinc oxide electron transport layer and preparation method thereof
  • Quantum dot light emitting diode based on yttrium-doped zinc oxide electron transport layer and preparation method thereof
  • Quantum dot light emitting diode based on yttrium-doped zinc oxide electron transport layer and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0050] like figure 1 As shown, the quantum dot light-emitting diodes prepared in this implementation, the structure from bottom to top is the hole injection layer 12 deposited on the ITO glass, the hole transport layer 13, the quantum dot light-emitting layer 14, yttrium-doped zinc oxide nanoparticles Electron transport layer 15 and metal electrode layer 16. Its preparation includes the following steps:

[0051] (1) Cleaning treatment of ITO glass: use methanol, acetone, absolute ethanol and deionized water to carry out ultrasonic cleaning to ITO glass respectively for 30 minutes respectively, and the ITO glass sheet after cleaning is blown dry with the dry nitrogen gas through filtering, to drying The final ITO glass sheet is subjected to UV-ozone treatment, and the effect of UV-ozone treatment is to improve the surface wettability of the ITO glass sheet and increase the work function of the transparent conductive film;

[0052] (2) PEDOT / PSS aqueous solution is spin-coated...

Embodiment 2

[0064] The quantum dot light-emitting diode prepared in this implementation includes the following steps:

[0065] (1) Cleaning of FTO glass: Ultrasonic cleaning of FTO glass was carried out for 30 minutes with methanol, acetone, absolute ethanol and deionized water successively, and the FTO glass sheet after cleaning was blown dry with filtered dry nitrogen. The final FTO glass sheet is subjected to ultraviolet ozone treatment;

[0066] (2)MoO 3 Dissolved in absolute ethanol to form MoO 3 ethanol solution, MoO 3 Ethanol solution was spin-coated on the surface of FTO glass after ultraviolet ozone treatment to prepare hole injection layer, MoO 3 The mass concentration of ethanol solution is 10mg / mL, MoO 3 The spin-coating speed of ethanol solution spin-coating is 3500rpm, and the spin-coating time is 1 minute, and the spin-coated MoO 3 The conductive film is heat-treated at 50° C. for 30 minutes to obtain a hole injection layer, and the thickness of the hole injection laye...

Embodiment 3

[0079] The quantum dot light-emitting diode prepared in this implementation includes the following steps:

[0080] (1) Cleaning treatment of ATO glass: use methanol, acetone, absolute ethanol and deionized water to carry out ultrasonic cleaning respectively to ATO glass for 30 minutes respectively, and the ATO glass sheet after cleaning is blown dry with dry nitrogen through filtering, to drying The final ATO glass sheet is subjected to UV ozone treatment;

[0081] (2) WO 3 Dissolved in absolute ethanol to form WO 3 Ethanol solution was spin-coated on the surface of ATO glass after ultraviolet ozone treatment to prepare hole injection layer, WO 3 The mass concentration of ethanol solution is 10mg / mL, WO 3 The spin-coating speed of ethanol solution spin-coating is 4000rpm, and the spin-coating time is 2 minutes. 3 The conductive film is heat-treated at 50° C. for 30 minutes to obtain a hole injection layer, and the thickness of the hole injection layer is 30 nm;

[0082] (...

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Abstract

The invention discloses a quantum dot light emitting diode based on an yttrium-doped zinc oxide electron transport layer and a preparation method thereof. The light emitting diode is formed by lamination of a transparent conductive glass layer, a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer, and a metal electrode layer in sequence, the electron transport layer is an yttrium-doped zinc oxide nanometer particle layer, and the mole percentage of yttrium in yttrium-doped zinc oxide nanometer particles is 2%-20%. The quantum dot lightemitting diode is prepared through a solution processing method, and the process is simple and feasible; the process of the yttrium-doped zinc oxide particles is compatible with a conventional sol-gel method, the realization is easy, the doping amount is controllable, the adjusting range of the electron mobility of the obtained nanometer particles is wide, and the light emitting diode and the method are very applicable to quantum dot light-emitting devices so that electron injection is adjusted and carrier balance is achieved.

Description

Technical field: [0001] The invention belongs to the technical field of semiconductor light emitting diodes, and in particular relates to a quantum dot light emitting diode based on an yttrium-doped zinc oxide electron transport layer and a preparation method thereof. Background technique: [0002] Quantum dot light-emitting diodes have become a strong contender for next-generation display devices due to a series of advantages such as high color saturation, adjustable luminous color, and low energy consumption. At present, organic-inorganic hybrid quantum dot light-emitting diodes have better device performance compared to quantum dot light-emitting devices with an organic transport layer structure. This performance improvement benefits from the application of high electron mobility zinc oxide nanoparticles. However, the high electron mobility of zinc oxide can easily lead to excessive electron injection, leading to the phenomenon of electron accumulation in the quantum dot ...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/56H01L51/54
CPCH10K71/12H10K50/115H10K2102/101H10K71/00
Inventor 徐雪青李景灵徐刚
Owner GUANGZHOU INST OF ENERGY CONVERSION - CHINESE ACAD OF SCI
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