Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

g-C3N4/H-S-TiO2 base nano tube array and preparing method and application thereof

A nanotube array, g-c3n4 technology, which is applied in the field of g-C3N4/H-S-TiO2-based nanotube array and its preparation, can solve the problems such as the limitation of nanotube array performance improvement, improve photoelectric conversion efficiency, and have a wide range of applications , the effect of orderly structure

Inactive Publication Date: 2018-06-26
HENAN UNIVERSITY OF TECHNOLOGY
View PDF5 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Each modification method has its own advantages, but also has certain disadvantages. For TiO 2 The performance improvement of nanotube arrays is relatively limited, so further research on TiO 2 Modification approaches and methods of nanotube arrays

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • g-C3N4/H-S-TiO2 base nano tube array and preparing method and application thereof
  • g-C3N4/H-S-TiO2 base nano tube array and preparing method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] a g-C 3 N 4 / H-S-TiO 2 A method for preparing a nanotube array, the specific steps are:

[0041] A titanium sheet with a thickness of 0.2 mm was selected, ultrasonically cleaned in deionized water, acetone, isopropanol, and absolute ethanol for 3 minutes each, and dried in a drying oven for later use. Select the electrolyte, specifically 0.5wt%NH 4 F+0.3MH 3 PO 4 Electrochemical anodic oxidation of metal titanium in the electrolyte system at 20V for 1 hour, and a highly ordered ordered array of nanotubes grow on the surface of metal titanium, with an average diameter of nanotubes of about 100nm and a wall thickness of 12nm , tube length 650nm.

[0042] The ordered array of nanotubes was first heat-treated at 500°C for 2 hours, and then treated at 550°C for 1-3 hours in a certain closed hydrogen sulfide atmosphere, and the heating rate was 3°C / min to obtain H-S-TiO 2 base nanotube arrays.

[0043] Weigh a certain amount of urea, and heat-treat the urea in a muff...

Embodiment 2

[0045] a g-C 3 N 4 / H-S-TiO 2 A method for preparing a nanotube array, the specific steps are:

[0046] A 0.2 mm thick pure titanium sheet was selected, polished brightly with coarse and fine sandpaper, ultrasonically cleaned with deionized water, acetone, isopropanol, and absolute ethanol for 3 minutes, and dried in a drying oven for later use. Select the electrolyte, specifically 0.5wt%NH 4 F+0.1MH 3 PO 4 Electrochemical anodic oxidation of metal titanium in the electrolyte system at 20V for 1h, and a highly ordered ordered array of nanotubes grow on the surface of metal titanium, with an average diameter of nanotubes of about 90nm and a wall thickness of 15nm , tube length 600nm.

[0047] The ordered array of nanotubes was first heat-treated at 500°C for 2h, and then treated at 550°C for 3h in a certain closed hydrogen sulfide atmosphere, and the heating rate was 3°C / min to obtain H-S-TiO 2 base nanotube arrays.

[0048] Measure 5g of urea and 50ml of absolute etha...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
pore sizeaaaaaaaaaa
verticalityaaaaaaaaaa
Login to View More

Abstract

The invention provides a g-C3N4 / H-S-TiO2 base nano tube array and a preparing method and application thereof, and belongs to the technical field of nano composite materials. The specific preparing method comprises the steps that on a titanium containing metal base body, a nano tube ordered array is prepared through an anodic oxidation method; the prepared nano tube ordered array is subjected to crystallization, vulcanization and hydrogenation treatment, and an H-S-TiO2 base nano tube array is obtained; the prepared H-S-TiO2 base nano tube array and g-C3N4 are compounded, and the g-C3N4 / H-S-TiO2 base nano tube array is obtained. The ordered nano tube array composite material structure is orderly and tidy, the specific surface area is large, the quantum efficiency is high, the wavelength range for sunlight absorption and utilization is obviously enlarged, the photoelectric conversion efficiency can be obviously improved, and very wide application is achieved in solar batteries, photocatalysis and other aspects. If the ordered nano tube array composite material serves a photoelectrode, the advantages of the nano tube ordered array can be brought into full play, and a thought is provided for design, development and application of the high-performance photoelectrode.

Description

technical field [0001] The invention belongs to the technical field of nanocomposite materials, in particular to a g-C 3 N 4 / H-S-TiO 2 Base nanotube array and its preparation method and application. Background technique [0002] Titanium dioxide (TiO 2 ) nanotube array, as a semiconductor material with a highly ordered nanostructure, has outstanding advantages such as strong adsorption capacity, good photocatalytic properties, and low price. Sensitive devices and other fields have been widely researched and applied. TiO prepared on the surface of titanium-containing metal by anodic oxidation 2 The nanotube array has a large specific surface area, and the array structure is highly ordered; but due to the TiO 2 The bandgap width is wide, and it can only be excited under the irradiation of ultraviolet light. It has poor response to visible light, low photoelectric conversion efficiency, easy recombination of photogenerated electrons and holes, and low photocatalytic effi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C25D11/26C25B11/04B82Y40/00C02F1/30C02F1/461H01L31/18
CPCB82Y40/00C02F1/30C02F1/46104C02F1/46109C02F2001/46142C02F2305/08C25D11/26C25B11/091H01L31/18Y02P70/50
Inventor 刘世凯周淑慧刘雪涛张镇峰刘贺朋
Owner HENAN UNIVERSITY OF TECHNOLOGY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com