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Preparation method of vanadium pentoxide film and application thereof

A vanadium pentoxide and thin-film technology, which is used in semiconductor/solid-state device manufacturing, photovoltaic power generation, electrical components, etc. Ultra-high, low-cost effects

Inactive Publication Date: 2018-06-29
NINGBO UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the vanadium pentoxide films prepared by these methods have large roughness and high cost, which limit their application in solar cells.
[0003] The existing methods for preparing vanadium pentoxide thin films are mostly sol-gel method, spray method, chemical vapor deposition method, magnetron sputtering method and vacuum coating method, etc., but these methods have different shortcomings, such as: sol-gel method When preparing vanadium pentoxide film, during the coating process, bubbles, cracks, uneven thickness, and even shedding often occur due to the volatilization and shrinkage of the coating material
When the vanadium pentoxide film is prepared by spray method, due to the distance, atomization time, and gas flow rate in the film forming process, there are certain requirements, and the preparation process is complicated, which is not suitable for large-scale promotion.
The chemical vapor deposition method has the disadvantages of high equipment and process requirements, and it is not easy to carry out large-scale industrial production.
The magnetron sputtering method has the disadvantages of high requirements on the target material (such as purity, surface smoothness, conductivity, etc.), and large investment in equipment.
The vacuum evaporation method has disadvantages such as relatively complicated preparation process, high requirements for instruments, and inability to carry out industrial production.

Method used

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  • Preparation method of vanadium pentoxide film and application thereof
  • Preparation method of vanadium pentoxide film and application thereof
  • Preparation method of vanadium pentoxide film and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Embodiment 1, the preparation of vanadium pentoxide film

[0028] Take 30mg of ammonium metavanadate NH 4 VO 3 Place in 3mL of a mixed solution of ethylene glycol and dimethyl sulfoxide (the volume ratio of ethylene glycol and dimethyl sulfoxide is 2:1), and heat to dissolve at 80°C to form a transparent golden yellow solution, and then put the After the solution was naturally cooled to room temperature, 80uL of the solution was spin-coated on the cleaned ITO conductive glass at a spin-coating speed of 3500rpm / min for 60s. After spin coating, put the film on a heating plate, and heat it at 200° C. for 45 minutes to obtain the vanadium pentoxide thin film of the present invention.

[0029] The characterization of vanadium pentoxide film of the present invention: figure 1 (a) is the vanadium pentoxide precursor solution of 10mg / mL; Analyze and determine the structure of vanadium pentoxide film with X-ray diffractometer, the result is as follows figure 1 (b), shown by ...

Embodiment 2

[0031] Embodiment 2, prepare CH on the vanadium pentoxide film 3 NH 3 PB 3 film

[0032] Dissolve methyl iodide and lead iodide in 1 mL of mixed solution DMF and DMSO (volume ratio 4:1) to prepare CH 3 NH 3 PB 3 Precursor solution, get this solution 70uL and add drop-wise on the vanadium pentoxide thin film prepared in embodiment 1 and carry out spin-coating, wherein spin-coating rotating speed 4500rpm / min, spin-coating time 30s, drip 400uL chlorobenzene in spin-coating, then Heating on a heating plate at 80°C for 10 min, cooling to produce CH 3 NH 3 PB 3 film, the CH 3 NH 3 PB 3 The films were examined by scanning electron microscopy (SEM). image 3 (a) see CH 3 NH 3 PB 3 The grain size of the film spin-coated on ITO is about 200nm, and CH can be seen in (b) 3 NH 3 PB 3 The grain size on which the films were spin-coated was generally greater than 1 um.

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Abstract

The present invention discloses a preparation method of a vanadium pentoxide film and an application thereof. The preparation method comprises the following steps of: dissolving solution containing ammonium metavanadate into a mixing solution of ethylene glycol and dimethyl sulfoxide, performing heating dissolving, and obtaining vanadium pentoxide polymeric pecursor solution. The pecursor solutionis subjected to spin coating on an ITO substrate and then is heated to prepare a vanadium pentoxide film. The prepared vanadium pentoxide can be taken as hole transport layer materials used in a solar cell. The vanadium pentoxide film is flat and uniform and low in roughness, and the preparation method is safe, simple, low in cost and friendly in environment.

Description

technical field [0001] The invention relates to the technical field of preparation of two-dimensional nanometer materials, in particular to a method for preparing a vanadium pentoxide thin film and an application thereof. Background technique [0002] Vanadium pentoxide (V 2 o 5 ) is a common functional transition metal oxide, which is widely used in supercapacitors, catalysts, enamel, magnetic materials and solar cells, etc. In recent years, vanadium pentoxide has been increasingly used as a solar energy source due to its outstanding performance in photoelectric properties, including appropriate energy levels, good electrical conductivity, high stability, low cost and easy preparation. battery interface materials. However, high-performance solar cells have high requirements on the quality of their interface films. Therefore, people expect to obtain a method for preparing highly uniform and flat vanadium pentoxide thin films to improve their performance in solar cells. A...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/48H01L51/46
CPCH10K71/12H10K71/40H10K30/10H10K30/00H10K2102/00Y02E10/549
Inventor 肖勋文王乐佳沈梁钧
Owner NINGBO UNIVERSITY OF TECHNOLOGY
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