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Photoresist composition containing poly-p-hydroxystyrene epoxy resin serving as film-forming resin

A film-forming resin and composition technology, which can be applied to photosensitive materials, optics, and opto-mechanical equipment used in opto-mechanical equipment, etc., can solve the problems of difficult control of the degree of polycondensation reaction, complex process flow, and difficult operation.

Active Publication Date: 2018-07-06
HUBEI GURUN TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As an epoxy system, it mainly includes novolac epoxy resin. Its main performance characteristics are as described above for the film-forming resin of SU-8 photoresist. Its disadvantages: phenolic resin is synthesized by polycondensation reaction , the degree of polycondensation reaction is not easy to control, the molecular weight distribution of the obtained product is wide, the product needs to be graded and screened, the process is complex and difficult to operate, and the cost is high
However, there are fewer types of poly(p-hydroxystyrene) photoresist negative resists currently developed, and the obtained photoresists are not thick film photoresists, but ordinary photoresists.

Method used

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  • Photoresist composition containing poly-p-hydroxystyrene epoxy resin serving as film-forming resin
  • Photoresist composition containing poly-p-hydroxystyrene epoxy resin serving as film-forming resin
  • Photoresist composition containing poly-p-hydroxystyrene epoxy resin serving as film-forming resin

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0134] The present invention will be further described below in conjunction with examples, but it should not be understood as a limitation of the protection scope of the present invention.

[0135] The characterization and detection methods involved in the following examples are as follows:

[0136] 1. Infrared spectrum characterization method

[0137] The infrared spectrum is measured by Shimadzu IRAffinity Fourier transform infrared spectrometer, the scanning range is 4000-400cm -1 , The sample was processed by KBr tableting method.

[0138] 2. 1 H NMR spectrum characterization method

[0139] 1 The H NMR was measured with a Bruker Avame PRX400 nuclear magnetic resonance instrument, the chemical shift was expressed in ppm, the solvent was deuterated chloroform, the internal standard was tetramethylsilane, the scan width was 400 MHz, and the scan number was 16 times.

[0140] 3. Ultraviolet absorption spectrum measurement method

[0141] Using acetonitrile as the solvent, the sample was ...

preparation Embodiment 1

[0153] Preparation Example 1: Poly 4-(2’,3’-glycidoxy)styrene (Polymer 1)

[0154]

[0155] Take 50ml of acetone as the solvent, add 12g of poly(p-hydroxystyrene) (number average molecular weight 3120, n=26) (0.1mol repeating unit) to the solvent, stir with electric, blow in nitrogen, and add 2.4g (0.06mol) of sodium hydroxide . The temperature of the resulting reaction mixture was controlled at 25° C., 16.65 g of epichlorohydrin (0.18 mol) was slowly added dropwise through a constant pressure dropping funnel, and the addition was completed within 0.5 hours, and then the resulting reaction mixture was reacted at 25° C. for 8 hours. After the reaction is completed, the undissolved inorganic matter is filtered off, the filtrate is distilled under reduced pressure, and the solvent and excess epichlorohydrin are evaporated to obtain a solid, which is washed three times with water, filtered and dried to obtain the product, which is analyzed as the title polymer.

[0156] The NMR data a...

preparation Embodiment 2

[0160] Preparation Example 2: Poly 3,5-dimethyl-4-(2’,3’-glycidoxy)styrene (polymer 2)

[0161]

[0162] Take 50ml of ethanol as the solvent, add 14.8g of poly 3,5-dimethyl-4-hydroxystyrene (number average molecular weight 4144, n=28) (0.1 mol repeating unit) to the solvent, stir it electrically, and blow in nitrogen. 5.6 g (0.1 mol) of potassium hydroxide was added. The temperature of the obtained reaction mixture was controlled at 20° C., 18.5 g of epichlorohydrin (0.2 mol) was slowly added dropwise through a constant pressure dropping funnel, and the addition was completed within 0.5 hours, and then the obtained reaction mixture was reacted at 25° C. for 8 hours. After the reaction is completed, the undissolved inorganic matter is filtered off, the filtrate is distilled under reduced pressure, and the solvent and excess epichlorohydrin are evaporated to obtain a solid, which is washed three times with water, filtered and dried to obtain the product, which is analyzed as the ti...

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Abstract

The invention relates to a photoresist composition containing a polymer of a formula (I) and serving as film-forming resin, wherein Ra-Rd, Ra0-Rd0, Ra1-Rd1, Ra2-Rd2, n, n0, n1 and n2 are defined as the specification. When the film-forming polymer, which the photoresist composition contains, serves as the film-forming resin of the photoresist, the advantages of high ultraviolet light transmittance,high viscosity, capability of forming a thick film, high photosensitive speed, high resolution ratio and the like are achieved. The photoresist provided by the invention is negative thick film photoresist which can be applied to an advanced packaging technology and MEMS manufacturing, the film thickness one-time uniform glue shorting sheet can reach to 20 to 100 microns according to requirements,the independent line width range of the resolution ratio is more than 5 microns, and the sensitivity (based on 20-mum film thickness) is 50 to 80 mJ / cm<-2>. (The formula is as shown in the description).

Description

Technical field [0001] The present invention relates to a photoresist composition containing poly(p-hydroxystyrene) epoxy resin as a film-forming resin. The photoresist composition is suitable for advanced packaging (silicon wafer and packaging WLP) and micro-electronic mechanical system (MEMS, Micro-Electronic Machine System) fields of large-scale integrated circuits. Background technique [0002] Photoresist is an etching resistant film material whose solubility changes under the irradiation or radiation of light sources such as ultraviolet light, excimer laser, electron beam, ion beam, and X-ray. Since it was invented in the 1950s, photoresist has become the core process material in the semiconductor industry and is widely used in the manufacture of integrated circuits and printed circuit boards. In the early 1990s, photoresist was applied to the processing of LCD devices, which played an important role in promoting the large-size, high-definition, and colorization of LCD pan...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/027G03F7/004
CPCG03F7/004G03F7/027
Inventor 邹应全郭晔嘉庞玉莲
Owner HUBEI GURUN TECH CO LTD