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Method for preparing vertical transition metal sulfide nanosheet array and electro-catalysis hydration separation catalyst

A metal sulfide and nanosheet array technology, applied in the field of electrocatalytic hydrogen evolution, can solve the problems of high energy consumption, random thickness, surface adsorption pollution, etc., and achieve the effects of reducing energy consumption, shortening time, and improving efficiency

Active Publication Date: 2018-07-20
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, both methods have their own disadvantages
The former uses lithium-ion intercalation to obtain tantalum disulfide nanosheets, whose lateral size is often at the nanometer level, and the thickness is random, and there are problems such as surface adsorption pollution, which is not conducive to subsequent processing and application.
The latter has high energy consumption and low efficiency during the long-term high-temperature reaction process. The thickness and size of the tantalum disulfide nanosheets obtained by mechanical exfoliation cannot be controlled, and there are problems such as low preparation efficiency and residual polymer pollution.
The shortcomings of these two preparation methods limit the research and application development of tantalum disulfide nanosheets, so it is necessary to invent a new method of high efficiency, energy saving and controllable preparation of uniform thickness and large size tantalum disulfide nanosheets

Method used

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  • Method for preparing vertical transition metal sulfide nanosheet array and electro-catalysis hydration separation catalyst
  • Method for preparing vertical transition metal sulfide nanosheet array and electro-catalysis hydration separation catalyst
  • Method for preparing vertical transition metal sulfide nanosheet array and electro-catalysis hydration separation catalyst

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] Cut the purchased commercial gold-silver alloy foil (1 cm ╳ 1 cm, thickness 700 nanometers), and then chemically etch the porous gold film. The etching method is: 700 nanometers thick gold-silver alloy The foil was etched in concentrated nitric acid for 4 hours, and the residual nitric acid was subsequently rinsed with deionized water to complete the preparation of porous gold. Gold foil is used as the supporting substrate of the porous gold film, and the cleaned porous gold film is picked up from the water surface with gold foil to obtain the growth substrate. The prepared growth substrate is placed in a high-temperature tubular reaction chamber, and tantalum pentachloride and sulfur powder are placed in sequence in the upstream of the airflow relative to the substrate. The distance between the sulfur powder and the tantalum pentachloride is 1-2 cm, and the distance between the tantalum pentachloride and the substrate 8 to 10 centimeters, of which the masses of sulfur ...

Embodiment 2

[0057] The thickness of the tantalum disulfide nanosheets prepared in Example 1 was characterized by atomic force microscopy. The prepared vertical tantalum disulfide nanosheets can be attached to the surface of the required substrate by pressing the surface of the required substrate face-to-face with the substrate for growing tantalum disulfide. The method can effectively avoid the pollution problem in the traditional polymer-assisted transfer method. The thickness of tantalum disulfide nanosheets can be adjusted from 18 nm to 300 nm with different growth times, and the lateral size can reach 5 microns. The topography and height maps of the atomic force microscope are respectively figure 2 a-h.

Embodiment 3

[0059] The tantalum disulfide nanosheets prepared in Example 1 have been tested by Raman spectrum, X-ray diffraction, and transmission electron microscopy, and the results are as follows: image 3 shown. Raman spectroscopy test shows that the prepared tantalum disulfide nanosheets are tantalum disulfide nanosheets with 1T phase structure. X-ray diffraction also shows that the prepared nanosheets are tantalum disulfide nanosheets with high crystalline quality and 1T phase structure. Transmission electron microscopy test shows that the prepared nanosheets are tantalum disulfide nanosheets with good crystal quality.

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Abstract

The invention discloses a method for preparing a vertical transition metal sulfide nanosheet array through chemical vapor deposition. The method comprises the following steps: 1) adopting porous goldas a growth substrate; 2) placing single sulfur and a chloride of a transition metal as precursors at the upstream of an air flow; and 3) introducing a carrier gas to remove residual air, after the air flow is stabilized, respectively heating the single sulfur, the chloride of the transition metal and the porous gold to different temperatures, keeping the temperatures for a certain time, and growing on the substrate, thereby obtaining the vertical transition metal sulfide nanosheet array. By adopting the method, preparation of large-scale metallic transition metal sulfide nanosheets can be achieved, and moreover the vertical metallic transition metal sulfide nanosheet array prepared by using the synthesis method has excellent electro-catalysis hydration separation properties.

Description

technical field [0001] The invention belongs to the field of materials, specifically, the present invention relates to a controllable preparation of a vertical transition metal sulfide nanosheet array on a porous gold substrate by using a chemical vapor deposition method, provides a vertical transition metal sulfide nanosheet, and applies it for electrocatalytic hydrogen evolution. Background technique [0002] Transition metal chalcogenides (MX2, M = transition metal; X = S, Se, Te) are important components in two-dimensional layered materials, and the reported MX2 materials are mainly concentrated on the sixth subgroup metals (Mo and W ) on chalcogenides, which is mainly due to the suitable band gap of this kind of two-dimensional semiconductors and can be applied to electronic and optoelectronic devices. Looking at the MX2 material family, there are still many members that have not attracted people's attention. Among them, metallic transition metal chalcogenides (such a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G35/00B82Y30/00C01G39/06C01G31/00C01G33/00B01J27/04
CPCB82Y30/00C01G31/00C01G33/00C01G35/00C01G39/06B01J27/04C01P2002/72C01P2002/82C01P2004/03C01P2004/20C01P2004/64B01J35/23B01J35/33
Inventor 张艳锋郇亚欢史建平
Owner PEKING UNIV
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