Controllable high-density plasma preparation device and preparation method of graphene film

A technology of high-density plasma and graphene film, which is applied in the direction of metal material coating process, coating, gaseous chemical plating, etc., can solve the problem of substrate transfer and other problems, and achieve large-area preparation, which is conducive to industrial production and high The effect of ion flux

Active Publication Date: 2019-04-05
SUZHOU UNIV
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  • Abstract
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Problems solved by technology

Large-scale production is possible. The grown graphene is generally polycrystalline, and substrate transfer is a difficult problem.

Method used

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  • Controllable high-density plasma preparation device and preparation method of graphene film
  • Controllable high-density plasma preparation device and preparation method of graphene film
  • Controllable high-density plasma preparation device and preparation method of graphene film

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Effect test

Embodiment 1

[0043] Embodiment 1 Plasma preparation device and plasma generation method

[0044] see figure 1 , the controllable high-density plasma preparation device of the present invention includes a vacuum chamber 1, an upper plate 2 located at the upper part of the vacuum chamber 1, a lower plate 4 located at the lower part of the vacuum chamber 1, an induction coil 3, and a vacuum pumping system 9 . The lower pole plate 4 is arranged directly opposite to the bottom of the upper pole plate 2, and both are parallel to each other. The distance between the upper pole plate 2 and the lower pole plate 4 is adjustable, preferably 50 mm in this embodiment. The diameter of the upper pole plate 2 is 200 mm, and the diameter of the lower pole plate 4 is 200 mm. The lower surface of the lower pole plate 4 is also connected with a heater 5, the heater 5 is an armor heater, and the heating temperature range is 0-1000°C. The inductance coil 3 is located between the upper pole plate 2 and the l...

Embodiment 2

[0054] The preparation method of embodiment 2 graphene film

[0055] (1) Use turbomolecular pump and mechanical pump unit to pump the vacuum degree of vacuum chamber 1 to 5×10 -5 Pa, using carbon-containing gas as the gas source, the carbon-containing gas includes methane, ethylene and acetylene, the gas source is passed into the vacuum chamber 1, the flow rate of the gas source is 10sccm, and the pressure is 10Pa;

[0056] (2) place the silicon carbide substrate on the upper surface of the lower pole plate 4, do not heat the substrate at this time, apply frequency to the upper pole plate 2 respectively and be 60MHz, the radio frequency that the power is 200W (reflection power is 0W), for Inductance coil 3 applied frequency is 13.56MHz, and power is the radio frequency (reflected power is 0W) of 150W, is 27.12MHz to lower pole plate 4, and power is the radio frequency (reflected power is 0W) of 80W, under above-mentioned conditions, in carbonization A uniform carbon film is d...

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Abstract

The invention relates to a controllable height plasma preparation apparatus. The controllable high-density plasma preparation apparatus comprises a vacuum chamber, an upper electrode plate located inthe vacuum chamber, a lower electrode plate located right below the upper electrode plate, an induction coil and a vacuum exhausting system, wherein the upper electrode plate and the lower electrode plate are arranged in parallel, a distance between the upper electrode plate and the lower electrode plate is adjustable, the inductance coil is located between the upper electrode plate and the lowerelectrode plate, the axis center of the inductance coil is arranged in a horizontal direction, the upper electrode plate, the inductance coil and the lower electrode plate are respectively connected with a first power supply, a second power supply and a third power supply, a plurality of pores are distributed on the upper electrode plate, the lower surface of the lower electrode plate is also connected with a heater, the vacuum chamber is also provided with an air inlet, an air inlet pipe is arranged in the air inlet in a penetrating manner, and the air inlet pipe is communicated with an external air source. By adopting the controllable height plasma preparation apparatus, the large-area uniform preparation process of plasma capable of independently controlling the plasma density, ion fluxand ion energy can be realized, and the graphene film can be prepared under a condition that the surface of a silicon carbide substrate is low in temperature.

Description

technical field [0001] The invention relates to the technical field of plasma preparation, in particular to a controllable high-density plasma preparation device and a method for preparing a graphene film. Background technique [0002] The low-temperature plasma formed by low-pressure discharge is the main means of microelectronics processing, and it is used for deposition, etching, ash removal, polymerization or implantation, etc. One of the keys to the development of high-tech industries such as microelectronics, optoelectronics, and communications is the development of plasma microfabrication technology. [0003] The development process of low-pressure and low-temperature plasma sources for microfabrication has basically undergone three generations of updates: the first generation is a low-density single-chamber plasma source. The 13.56MHz radio frequency driven parallel plate electrode capacitively coupled discharge plasma etching machine used since the 1980s, plasma ge...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/26C23C16/509
CPCC23C16/26C23C16/5096
Inventor 葛水兵杨勇
Owner SUZHOU UNIV
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