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Hall sensor possessing two-dimensional electron gas channel barrier layer local groove structure and manufacturing method

A Hall sensor, two-dimensional electronic technology, applied in the direction of Hall effect devices, electromagnetic device manufacturing/processing, electromagnetic equipment components, etc. Increase voltage drop, improve device sensitivity, and improve the effect of electrode sensing signals

Active Publication Date: 2018-07-24
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, there are still some problems in the existing semiconductor heterojunction Hall sensors. One of the main problems is that although the existence of the two-dimensional electron gas channel can significantly improve the electron mobility, due to the high In the electric field perpendicular to the direction of the channel (longitudinal electric field), the electrons are completely bound in the interface channel, and the ability of the Lorentz force in the Hall effect to drive the carriers away from the original lateral transport track is weakened, which leads to the sensing Reduced voltage or current sensitivity

Method used

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  • Hall sensor possessing two-dimensional electron gas channel barrier layer local groove structure and manufacturing method
  • Hall sensor possessing two-dimensional electron gas channel barrier layer local groove structure and manufacturing method
  • Hall sensor possessing two-dimensional electron gas channel barrier layer local groove structure and manufacturing method

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Embodiment 1

[0028] The structural schematic diagram of the technical solution of the present invention is as follows: figure 1 . Grow buffer layer, epitaxial layer and barrier layer respectively on a semiconductor substrate, the substrate is semiconductor or any other common substrate that can support semiconductor epitaxial growth, especially including Si, InAs, GaAs, SiC, GaN, ZnO, gallium oxide , boron nitride, diamond, sapphire, or any one of quartz, without special limitation; the epitaxial layer can be GaAs, GaN or SiC, without special limitation; the barrier layer can be AlGaAs, There is no special limitation on AlGaN (or InAlN or AlN), or AlN, and the material composition in the barrier layer is not particularly limited. All material combinations and parameter selections for semiconductor heterojunction structures that can generate two-dimensional electron gas are included in this paper. The scope of the patent is limited. The background carrier concentration range of epitaxial ...

Embodiment 2

[0032] figure 2 The basic process of making Hall sensor proposed in the present invention is shown:

[0033] Step 1: Preparation of device chip material with heterojunction structure:

[0034] Device base materials include substrates, buffer layers, epitaxial layers, and barrier layers. The device materials were ultrasonically cleaned with acetone, ethanol, and deionized water, respectively, with an ultrasonic time of 10 min in each step, and then dried with nitrogen and baked at 110 °C for 10 min in an oven for use.

[0035] The second step: device mesa etching isolation:

[0036] The device mesa is defined by photolithography technology, and a good etching window is formed through the steps of gluing, uniform glue, photolithography, and development, and then wet or dry etching technology is used to etch the material barrier layer and epitaxial layer. The etching depth is generally 20 to 2000 nm.

[0037] Step 3: Shallow etching of the selected area of ​​the barrier laye...

Embodiment 3

[0046] 1. Device structure parameters

[0047] A GaN material epitaxial wafer with Si substrate AlN as the buffer layer is used, wherein the epitaxial layer is unintentionally doped GaN, the thickness is 6 μm, and the background electron concentration is 1×10 16 cm -3 , the barrier layer is AlGaN, the thickness is 30nm, and the Al composition is 0.25. The three main electrodes C of the chip 0 , C 1 and C 2 and the Hall sensing electrode S on the groove 1 and S 2 width is 2μm, where electrode C 0 with electrode C 1 , C 2 The pitch is 8μm, the electrode C 0 with electrode S 1 , S 2 The pitches are both 3.5 μm.

[0048] 2. Device manufacturing process

[0049] Step 1: Preparation of device chip material with heterojunction structure:

[0050] The device materials were ultrasonically cleaned with acetone, ethanol, and deionized water, respectively, with an ultrasonic time of 10 min in each step, and then dried with nitrogen and baked at 110 °C for 10 min in an oven f...

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Abstract

A hall sensor possessing a two-dimensional electron gas channel barrier layer local groove structure and a manufacturing method belong to the semiconductor sensor field. A buffer layer, an epitaxial layer and a barrier layer successively grow on a semiconductor substrate. The surface of the barrier layer is provided with three main electrodes C0, C1 and C2. The main electrodes C1 and C2 are centrally symmetrical about the main electrode C0. Groove structures are arranged between the main electrodes C0 and C1 and between the main electrodes C0 and C2. Two side groove structures are centrally symmetrical about the main electrode C0. The width of each groove structure is less than an electrode distance between the C0 and the C1 or the C0 and the C2. The groove structure between the main electrodes C0 and C1 is provided with a sensing electrode S1. The groove structure between the main electrodes C0 and C2 is provided with a sensing electrode S2. In the invention, through the shallow etching of a selection area, a groove is formed, and an intact heterojunction interface below the groove is kept; and the high mobility advantage of a two-dimensional electron gas can be used and a movingcarrier under a weak magnetic field signal can be ensured to generate effective offset so that device detection sensitivity is increased.

Description

technical field [0001] The invention relates to the field of semiconductor sensors, in particular to a Hall sensor with a local groove structure of a two-dimensional electron gas channel barrier layer and a manufacturing method thereof. Background technique [0002] The Hall magnetic field sensor is currently one of the most widely used sensor types for detecting the magnitude of the magnetic field, and has been widely used in biomedicine, automotive electronics, space detection and other fields. One of the important indicators for evaluating device performance in Hall sensors is voltage or current sensitivity, and this indicator is mainly restricted by the mobility of material carriers. The higher the mobility, the higher the sensitivity of the device. There are two basic structures of materials for existing semiconductor Hall sensors, one is based on a uniform single body material, and the other is based on III-V semiconductor heterojunctions represented by AlGaN / GaN and A...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/06H01L43/04H01L43/14H10N52/00H10N52/01H10N52/80
CPCH10N52/80H10N52/01H10N52/101
Inventor 黄火林曹亚庆李飞雨孙仲豪
Owner DALIAN UNIV OF TECH
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