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35results about How to "Improve voltage drop" patented technology

Improved droop control based microgrid auxiliary master-slave control method

The invention relates to an improved droop control based microgrid auxiliary master-slave control method. The method is used for maintaining stability of the voltage and power of the microgrid. The microgrid comprises multiple DGs connected with alternating current buses respectively; each DG comprises a master-control DG, an auxiliary DG and a slave-control DG; the master-control DG and the slave-control DG are used as a master-control unit and a slave-control unit in the master-slave control method respectively; the inverter in the auxiliary DG adopts voltage and current dual-loop control; a load current io is multiplied by a dynamic virtual impedance Zvir, and the obtained product is used as an instruction voltage to be added in a feedback signal to a voltage loop, so that the output impedance of the inverter is sensitive. Compared with the prior art, the inverter of the auxiliary DG adopts the dynamic virtual impedance, so that matching between the output impedance of the inverter and the circuit impedance can be ensured, voltage drop can be effectively relieved, and the power quality is ensured; and in addition, the improved droop control is adopted, and an integral link is introduced in the reactive power control link, so that steady state voltage without static errors is realized, and the steady state performance of the system is improved.
Owner:SHANGHAI UNIVERSITY OF ELECTRIC POWER

Voltage triggering static discharge clamping circuit with feedback strengthening effect

The invention discloses a voltage triggering static discharge clamping circuit with a feedback strengthening effect. The static discharge clamping circuit mainly solves the problem of low discharge efficiency of a clamping device in the existing voltage triggering static discharge clamping circuit. The circuit comprises a triggering circuit, a feedback circuit and a clamping device. After the triggering circuit detects the static discharge, the bias voltage Vb is input into the feedback circuit, the feedback circuit inputs the feedback voltage Vf to the triggering circuit for realizing the short circuit effect on two diodes in the triggering circuit so that the current flowing in the triggering circuit is increased, the source grid voltage of a transistor in the feedback circuit is increased, the grid electrode driving voltage Vg of the clamping device is raised to high voltage, the clamping device is sufficiently turned on, and the static discharge charges are efficiently discharged. The voltage triggering static discharge clamping circuit has the advantages that the discharge efficiency of the clamping device in the voltage triggering static discharge clamping circuit is improved, and the voltage triggering static discharge clamping circuit can be used for the design of integrated circuits.
Owner:XIDIAN UNIV

Lithium-rich cathode material doped with lithium manganate at Mn site, and preparation method of lithium-rich cathode material

The invention provides a lithium-rich cathode material doped with lithium manganate at a Mn site, and a preparation method of the lithium-rich cathode material. The preparation method of the lithium-rich cathode material doped with the lithium manganate at the Mn site comprises the following steps: evenly mixing a lithium source, a manganese source, doped metal salt and a metal complexing agent, carrying out ultrasonic gas atomization on the obtained mixture, and calcining to obtain spherical lithium manganate powder; mixing the obtained spherical lithium manganate powder with a spherical cathode material, coating and calcining. The lithium-rich cathode material provided by the invention is prepared by doping the lithium manganate at the Mn site, thus effectively inhibiting oxygen evolution and solving the problem of voltage drop in a circulating process; the tap density of powder can be improved by mixing, so that the energy density of the material is further improved; due to the stepof coating, the loss of oxygen vacancies and the migration of transition metal ions are reduced; after the lithium-rich cathode material is adopted, the first time efficiency is increased, the safetyperformance of batteries is improved, and the energy density of the material is improved.
Owner:桑顿新能源科技(长沙)有限公司

OLED device and preparation method thereof

The invention relates to an OLED device and a preparation method thereof. The OLED device comprises a substrate, two anodes, an auxiliary cathode, two dams, a functional layer, a thin film layer and asurface cathode. A good solvent and a poor solvent dissolved by a macromolecular solute or a mixed solvent of the good solvent and the poor solvent are printed into an electron transport layer at thebottom of a contact hole through ink-jet printing, so that the solvent scours and dissolves the electron transport layer at the bottom of the contact hole, a film layer structure of the electron transport layer is damaged to form a nanoparticle structure, and then the solvent is removed to form the thin film layer. Due to the agglomeration effect of the nanoparticles, the uniformity of the thin film layer is reduced, so that the surface cathode can be directly conducted with the auxiliary cathode which is not covered by the thin film layer, and the problem of voltage drop is solved; and in addition, a conductor material can be added into a solvent for washing the electron transport layer, so that the conductivity of the thin film layer is improved, the surface cathode can be conducted with the auxiliary cathode through the thin film layer mixed with the conductor material, and the problem of voltage drop is further solved.
Owner:SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD

Hall sensor possessing two-dimensional electron gas channel barrier layer local groove structure and manufacturing method

A hall sensor possessing a two-dimensional electron gas channel barrier layer local groove structure and a manufacturing method belong to the semiconductor sensor field. A buffer layer, an epitaxial layer and a barrier layer successively grow on a semiconductor substrate. The surface of the barrier layer is provided with three main electrodes C0, C1 and C2. The main electrodes C1 and C2 are centrally symmetrical about the main electrode C0. Groove structures are arranged between the main electrodes C0 and C1 and between the main electrodes C0 and C2. Two side groove structures are centrally symmetrical about the main electrode C0. The width of each groove structure is less than an electrode distance between the C0 and the C1 or the C0 and the C2. The groove structure between the main electrodes C0 and C1 is provided with a sensing electrode S1. The groove structure between the main electrodes C0 and C2 is provided with a sensing electrode S2. In the invention, through the shallow etching of a selection area, a groove is formed, and an intact heterojunction interface below the groove is kept; and the high mobility advantage of a two-dimensional electron gas can be used and a movingcarrier under a weak magnetic field signal can be ensured to generate effective offset so that device detection sensitivity is increased.
Owner:DALIAN UNIV OF TECH

Micro LED display panel and preparation method thereof

ActiveCN113745265AAdd entry pointShorten the trace distanceSolid-state devicesSemiconductor devicesLED displayDielectric layer
The invention discloses a Micro LED display panel and a preparation method thereof. The Micro LED display panel comprises a glass substrate, a shading layer, a buffer layer, a thin film transistor layer, a passivation layer, an ITO connecting layer, a common connecting layer, a first metal wire and a second metal wire, wherein the common connecting layer is arranged on the ITO connecting layer and is patterned to form a first electrode, a second electrode, a VDD wire and a VSS wire; a first metal through hole and a second metal through hole sequentially penetrate through the passivation layer, a dielectric layer, the buffer layer and the glass substrate; the first metal through hole is filled with the first metal wire, and the VDD wire is covered with the first metal wire; and the second metal through hole is filled with the second metal wire, and the VSS wire is covered with the second metal wire. According to the Micro LED display panel, a punching mode is adopted, so that the VDD wire and the VSS wire which are located on the front face of the array substrate are connected to a first metal connecting layer and a second metal connecting layer which are located on the back face of the array substrate, and due to the fact that display is not affected by the back face wire, low resistance is achieved by increasing the wire width and the film thickness of the back face wire.
Owner:SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD

A microgrid auxiliary master-slave control method based on improved droop control

The invention relates to an improved droop control based microgrid auxiliary master-slave control method. The method is used for maintaining stability of the voltage and power of the microgrid. The microgrid comprises multiple DGs connected with alternating current buses respectively; each DG comprises a master-control DG, an auxiliary DG and a slave-control DG; the master-control DG and the slave-control DG are used as a master-control unit and a slave-control unit in the master-slave control method respectively; the inverter in the auxiliary DG adopts voltage and current dual-loop control; a load current io is multiplied by a dynamic virtual impedance Zvir, and the obtained product is used as an instruction voltage to be added in a feedback signal to a voltage loop, so that the output impedance of the inverter is sensitive. Compared with the prior art, the inverter of the auxiliary DG adopts the dynamic virtual impedance, so that matching between the output impedance of the inverter and the circuit impedance can be ensured, voltage drop can be effectively relieved, and the power quality is ensured; and in addition, the improved droop control is adopted, and an integral link is introduced in the reactive power control link, so that steady state voltage without static errors is realized, and the steady state performance of the system is improved.
Owner:SHANGHAI UNIVERSITY OF ELECTRIC POWER

Method for assignment of multiple power supply pins of voltage island

The invention discloses a method for assignment of multiple power supply pins of a voltage island. The method comprises the following steps of firstly, adopting a Kmeans assembly algorithm to divide a circuit macroblock included in the voltage island into n clusters based on the coordinate information of the circuit macro-blocks according to the physical information of the voltage island; secondly, carrying out fine tuning on ownership of the circuit micro-blocks in all clusters in order to enable the power density of each cluster to be approximately equal; and lastly, assigning different stiffness coefficients to springs connected to the circuit micro-blocks according to the current density, determining the position of an energy balance point of a spring system and completing assignment of the power supply pins of the circuit micro-blocks included in each cluster, and repeating the process to complete assignment of multiple power supply pins required by all voltage islands. According to the method, the voltage drop of nodes of a power network of the voltage island on a chip can be quickly and effectively optimized, so that the an automatic design optimization method for assignment of the power supply pins of the voltage island on the chip is enriched, and the design cost is reduced. Through example verification, the voltage drop of the power network, which is obtained by the method, can be effectively reduced.
Owner:NINGBO UNIV

Hall sensor with local groove structure of two-dimensional electron gas channel barrier layer and its manufacturing method

A Hall sensor with a local groove structure of a two-dimensional electron gas channel barrier layer and a manufacturing method thereof, belonging to the field of semiconductor sensors. A buffer layer, an epitaxial layer and a barrier layer are sequentially grown on the semiconductor substrate, and three main electrodes C are arranged on the surface of the barrier layer. 0 、C 1 and C 2 , main electrode C 1 and C 2 About the main electrode C 0 Centrosymmetric, main electrode C 0 and C 1 Between, C 0 and C 2 There is a groove structure between them, and the groove structure on both sides is about the main electrode C 0 Centrosymmetric, and the width of the groove structure is less than C 0 and C 1 or C 0 and C 2 Inter-electrode spacing, main electrode C 0 and C 1 Sensing electrodes S are arranged on the groove structure between 1 , main electrode C 0 and C 2 Sensing electrodes S are arranged on the groove structure between 2 . The invention forms grooves by shallow etching in selected areas, retains the intact heterojunction interface under the grooves, can take advantage of the high mobility of two-dimensional electron gas, and can ensure that the carriers in motion under weak magnetic field signals can generate effectively offset, thereby increasing the detection sensitivity of the device.
Owner:DALIAN UNIV OF TECH

Test process of nitrile additive applied to lithium cobalt oxide system electrolyte

The invention discloses a test process of a nitrile additive applied to a lithium cobalt oxide system electrolyte, and relates to the technical field of lithium ion batteries, and the test process comprises the preparation process of a soft package battery cell: (1) manufacturing a positive pole piece; (2) manufacturing a negative pole piece; (3) manufacturing a PE isolating membrane; (4) dissolving lithium hexafluorophosphate (LiPF6) in ethylene carbonate (EC), diethyl carbonate (DEC) and propyl propionate (PP) in a mass ratio of 1: 1: 1 in a glove box under argon protection, and then adding fluoroethylene carbonate (FEC), 1, 3-propane sultone (PS), and any one of adiponitrile (ADN), succinonitrile (SN), ethylene glycol bis (propionitrile) ether (DENE) or 1, 3, 6-hexanedinitrile (HTCN) to prepare an electrolyte; and (5) performing winding, assembling, baking, welding and sealing, liquid injection, formation and the like on the positive pole piece, the negative pole piece, a PE isolating membrane and electrolyte to prepare the soft package battery cell. A test result shows that the nitrile additive can improve the high-voltage resistance of the lithium ion battery electrolyte, and the high-temperature storage performance is particularly remarkably improved.
Owner:WUHU ETC BATTERY LTD
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