35results about How to "Improve voltage drop" patented technology

Parallel stage power output rectifiers for radio-frequency identification (RFID) devices and related components and methods are disclosed. An RFID tag receives a radio-frequency (RF) signal comprising RF input energy through an input such as an antenna. The RF input energy provided to a rectifier splits the RF input energy into two or more stages having parallel electrical outputs. The parallel electrical outputs allow for a more efficient use of the input energy in terms of current draw and improves voltage droop, thus improving the range and operation of the RFID tag.

The invention relates to an improved droop control based microgrid auxiliary master-slave control method. The method is used for maintaining stability of the voltage and power of the microgrid. The microgrid comprises multiple DGs connected with alternating current buses respectively; each DG comprises a master-control DG, an auxiliary DG and a slave-control DG; the master-control DG and the slave-control DG are used as a master-control unit and a slave-control unit in the master-slave control method respectively; the inverter in the auxiliary DG adopts voltage and current dual-loop control; a load current io is multiplied by a dynamic virtual impedance Zvir, and the obtained product is used as an instruction voltage to be added in a feedback signal to a voltage loop, so that the output impedance of the inverter is sensitive. Compared with the prior art, the inverter of the auxiliary DG adopts the dynamic virtual impedance, so that matching between the output impedance of the inverter and the circuit impedance can be ensured, voltage drop can be effectively relieved, and the power quality is ensured; and in addition, the improved droop control is adopted, and an integral link is introduced in the reactive power control link, so that steady state voltage without static errors is realized, and the steady state performance of the system is improved.

The invention discloses a voltage triggering static discharge clamping circuit with a feedback strengthening effect. The static discharge clamping circuit mainly solves the problem of low discharge efficiency of a clamping device in the existing voltage triggering static discharge clamping circuit. The circuit comprises a triggering circuit, a feedback circuit and a clamping device. After the triggering circuit detects the static discharge, the bias voltage Vb is input into the feedback circuit, the feedback circuit inputs the feedback voltage Vf to the triggering circuit for realizing the short circuit effect on two diodes in the triggering circuit so that the current flowing in the triggering circuit is increased, the source grid voltage of a transistor in the feedback circuit is increased, the grid electrode driving voltage Vg of the clamping device is raised to high voltage, the clamping device is sufficiently turned on, and the static discharge charges are efficiently discharged. The voltage triggering static discharge clamping circuit has the advantages that the discharge efficiency of the clamping device in the voltage triggering static discharge clamping circuit is improved, and the voltage triggering static discharge clamping circuit can be used for the design of integrated circuits.

A foreign object detection device in the present disclosure includes: a set sensor coil; and a determination device that detects a foreign object, based on voltage of the set sensor coil. A first sensor coil group in the set sensor coil includes unit sensor coils wound in a first winding direction and unit sensor coils wound in a second winding direction opposite to the first winding direction, these coils wound in the respective directions being electrically connected in series. Each unit sensor coil includes a coil conductor prescribing its external shape. Coil conductors are continuously and electrically connected in series. A part or the whole of the coil conductor forming the unit sensor coil in the first winding direction is a part or the whole of the coil conductor forming the unit sensor coil in the second winding direction.

The invention provides a lithium-rich cathode material doped with lithium manganate at a Mn site, and a preparation method of the lithium-rich cathode material. The preparation method of the lithium-rich cathode material doped with the lithium manganate at the Mn site comprises the following steps: evenly mixing a lithium source, a manganese source, doped metal salt and a metal complexing agent, carrying out ultrasonic gas atomization on the obtained mixture, and calcining to obtain spherical lithium manganate powder; mixing the obtained spherical lithium manganate powder with a spherical cathode material, coating and calcining. The lithium-rich cathode material provided by the invention is prepared by doping the lithium manganate at the Mn site, thus effectively inhibiting oxygen evolution and solving the problem of voltage drop in a circulating process; the tap density of powder can be improved by mixing, so that the energy density of the material is further improved; due to the stepof coating, the loss of oxygen vacancies and the migration of transition metal ions are reduced; after the lithium-rich cathode material is adopted, the first time efficiency is increased, the safetyperformance of batteries is improved, and the energy density of the material is improved.

The invention provides a Li-O site lithium manganate doped lithium-enriched positive electrode material and a preparation method thereof. The Li-O site lithium manganate doped lithium-enriched positive electrode material is prepared through mixing a manganese source, a lithium source and an element lithium doped compound and then carrying out a process including solid-phase sintering, wet-processcladding, material mixing and calcination. The prepared positive electrode material realizes doping on a Li site and an O site of lithium manganate and the aims of effectively inhibiting oxygen evolution, improving the rate performance, keeping an oxygen vacancy in a charging process, improving the initial efficiency, improving the safety performance of a battery and improving the energy density of the material are realized.

The invention relates to an OLED device and a preparation method thereof. The OLED device comprises a substrate, two anodes, an auxiliary cathode, two dams, a functional layer, a thin film layer and asurface cathode. A good solvent and a poor solvent dissolved by a macromolecular solute or a mixed solvent of the good solvent and the poor solvent are printed into an electron transport layer at thebottom of a contact hole through ink-jet printing, so that the solvent scours and dissolves the electron transport layer at the bottom of the contact hole, a film layer structure of the electron transport layer is damaged to form a nanoparticle structure, and then the solvent is removed to form the thin film layer. Due to the agglomeration effect of the nanoparticles, the uniformity of the thin film layer is reduced, so that the surface cathode can be directly conducted with the auxiliary cathode which is not covered by the thin film layer, and the problem of voltage drop is solved; and in addition, a conductor material can be added into a solvent for washing the electron transport layer, so that the conductivity of the thin film layer is improved, the surface cathode can be conducted with the auxiliary cathode through the thin film layer mixed with the conductor material, and the problem of voltage drop is further solved.

The present invention provides a display panel and a preparation method thereof, and a display device, belonging to the technical field of display. The objective of the invention is to reduce the electrode resistance of a luminescent device and facilitate achievement of ultrathin performance of an ITD display panel. The display panel comprises: a substrate; a luminescent device layer arranged at the upper portion of the substrate; and a touch structure layer arranged at one side, far away from the substrate, of the luminescent device layer, wherein the luminescent device layer comprises a plurality of luminescent devices, each luminescent device comprises one first electrode, one luminescent function layer and one second electrode which are arranged far away from the substrate in order, the touch structure layer comprises a plurality of third electrodes, and at least one of the third electrodes is in contact with the second electrode.

A hall sensor possessing a two-dimensional electron gas channel barrier layer local groove structure and a manufacturing method belong to the semiconductor sensor field. A buffer layer, an epitaxial layer and a barrier layer successively grow on a semiconductor substrate. The surface of the barrier layer is provided with three main electrodes C0, C1 and C2. The main electrodes C1 and C2 are centrally symmetrical about the main electrode C0. Groove structures are arranged between the main electrodes C0 and C1 and between the main electrodes C0 and C2. Two side groove structures are centrally symmetrical about the main electrode C0. The width of each groove structure is less than an electrode distance between the C0 and the C1 or the C0 and the C2. The groove structure between the main electrodes C0 and C1 is provided with a sensing electrode S1. The groove structure between the main electrodes C0 and C2 is provided with a sensing electrode S2. In the invention, through the shallow etching of a selection area, a groove is formed, and an intact heterojunction interface below the groove is kept; and the high mobility advantage of a two-dimensional electron gas can be used and a movingcarrier under a weak magnetic field signal can be ensured to generate effective offset so that device detection sensitivity is increased.

The invention relates to an erasable metal-insulator-silicon capacitor structure, belonging to the technical field of capacitors. The invention sequentially adopts an SiO2 film which is thermally oxidized by high-temperature dry oxygen as a charge tunneling layer, an HfO2 / Al2O3 / HfO2 sandwich nano lamination deposited by an atom layer as a charge capturing layer and an Al2O3 film deposited by the atom layer as a charge blocking layer; a substrate adopts P type monocrystal silicon; and a metal electrode adopts an HfN / TaN double-layer metal film prepared by a magnetron sputtering reaction, wherein the HfN directly contacts with the charge blocking layer Al2O3. The invention can effectively inhibit electron injected by the blocking layer in an erasure mode, enhance the storage property of thecapacitor obviously and enable the capacitor to have quick programming / erasure property, big storage window and high capacitance density, and has no erasure saturated phenomenon.

The invention relates to a DC circuit breaker for improving the arc blowout effect, which is formed by an electromagnetic-type circuit breaker and two permanent magnets, wherein the electromagnetic-type circuit comprises an insulation shell and a movable contact, the two permanent magnets are respectively arranged on the insulation shell at two side of the route of the movable contact, and the direction of the magnetic pole of the two permanent magnets is identical to each other. The interior of an arc blowout chamber of the electromagnetic-type circuit breaker provides no arc blowout plate so when the movable contact and the static contact are opened to produce the electric arc, the magnetic field between the two permanent magnets is utilized to ensure that the electric arc current is transferred away from the contact, the deflected electric arc and the lengthened electric arc route increase the voltage drop of the electric arc and reduces the energy of the electric arc, and the loss of the movable and the static contacts is reduced, and the service life of the circuit breaker is prolonged.

The invention provides a display panel and a manufacturing method thereof. The display panel comprises a substrate, and a pixel definition layer located on the substrate; the pixel definition layer comprises a plurality of pixel definition blocks which are arranged at intervals; a groove is formed in one side, far away from the substrate, of each pixel definition block, and an auxiliary electrodeis arranged in each groove; and the bottom surface of each groove has hydrophilicity, and the inner side surface of each groove has hydrophobicity. According to the display panel and manufacturing method thereof provided by the technical schemes of the invention, the line width and morphology of the auxiliary electrodes can be regulated and controlled, the voltage drop problem is effectively alleviated, and then the display brightness uniformity of the display panel is improved.

The present disclosure relates to a battery and a charging and discharging method thereof, a battery charging and discharging device, a terminal and a storage medium, and belongs to the field of electronic technology application. The battery is internally provided with a plurality of battery cells. The method comprises the steps of: monitoring the state of the battery; when the battery is in a charging state, controlling at least two of the plurality of battery cells to be connected in series; and when the battery is in a discharging state, controlling at least two of the battery cells to be connected in parallel. The quantity of heat in the battery charging and discharging process is reduced, and the influence degree of the heating of the battery on the usage of the battery and even the usage of the terminal is reduced. The battery and the charging and discharging method thereof, the battery charging and discharging device, the terminal and the storage medium are used for charge and discharge for the battery.

The invention discloses a Micro LED display panel and a preparation method thereof. The Micro LED display panel comprises a glass substrate, a shading layer, a buffer layer, a thin film transistor layer, a passivation layer, an ITO connecting layer, a common connecting layer, a first metal wire and a second metal wire, wherein the common connecting layer is arranged on the ITO connecting layer and is patterned to form a first electrode, a second electrode, a VDD wire and a VSS wire; a first metal through hole and a second metal through hole sequentially penetrate through the passivation layer, a dielectric layer, the buffer layer and the glass substrate; the first metal through hole is filled with the first metal wire, and the VDD wire is covered with the first metal wire; and the second metal through hole is filled with the second metal wire, and the VSS wire is covered with the second metal wire. According to the Micro LED display panel, a punching mode is adopted, so that the VDD wire and the VSS wire which are located on the front face of the array substrate are connected to a first metal connecting layer and a second metal connecting layer which are located on the back face of the array substrate, and due to the fact that display is not affected by the back face wire, low resistance is achieved by increasing the wire width and the film thickness of the back face wire.

The invention relates to an improved droop control based microgrid auxiliary master-slave control method. The method is used for maintaining stability of the voltage and power of the microgrid. The microgrid comprises multiple DGs connected with alternating current buses respectively; each DG comprises a master-control DG, an auxiliary DG and a slave-control DG; the master-control DG and the slave-control DG are used as a master-control unit and a slave-control unit in the master-slave control method respectively; the inverter in the auxiliary DG adopts voltage and current dual-loop control; a load current io is multiplied by a dynamic virtual impedance Zvir, and the obtained product is used as an instruction voltage to be added in a feedback signal to a voltage loop, so that the output impedance of the inverter is sensitive. Compared with the prior art, the inverter of the auxiliary DG adopts the dynamic virtual impedance, so that matching between the output impedance of the inverter and the circuit impedance can be ensured, voltage drop can be effectively relieved, and the power quality is ensured; and in addition, the improved droop control is adopted, and an integral link is introduced in the reactive power control link, so that steady state voltage without static errors is realized, and the steady state performance of the system is improved.

The invention provides a lithium-rich manganese based composite material shown as formula (I), and also provides a preparation method of the lithium-rich manganese based composite material. The method includes the steps of: mixing a material shown as formula (II), a lithium-rich manganese based material shown as formula (III) and an additive to obtain a mixed material, wherein the additive is selected from one or more of citric acid, glucose, chitosan and sucrose; and conducting heat treatment on the mixed material so as to obtain the lithium-rich manganese based composite material shown as formula (I). The lithium-rich manganese based composite material prepared by the method provided by the invention has the characteristics of excellent cycle performance and improved voltage drop, etc. In addition, the method has simple process engineering and is easy for realizing industrialization. LialphaZbeta(PO4)gamma / xLi2MnO3.(1-x)LiMO2 (I).

The invention discloses a method for assignment of multiple power supply pins of a voltage island. The method comprises the following steps of firstly, adopting a Kmeans assembly algorithm to divide a circuit macroblock included in the voltage island into n clusters based on the coordinate information of the circuit macro-blocks according to the physical information of the voltage island; secondly, carrying out fine tuning on ownership of the circuit micro-blocks in all clusters in order to enable the power density of each cluster to be approximately equal; and lastly, assigning different stiffness coefficients to springs connected to the circuit micro-blocks according to the current density, determining the position of an energy balance point of a spring system and completing assignment of the power supply pins of the circuit micro-blocks included in each cluster, and repeating the process to complete assignment of multiple power supply pins required by all voltage islands. According to the method, the voltage drop of nodes of a power network of the voltage island on a chip can be quickly and effectively optimized, so that the an automatic design optimization method for assignment of the power supply pins of the voltage island on the chip is enriched, and the design cost is reduced. Through example verification, the voltage drop of the power network, which is obtained by the method, can be effectively reduced.

A Hall sensor with a local groove structure of a two-dimensional electron gas channel barrier layer and a manufacturing method thereof, belonging to the field of semiconductor sensors. A buffer layer, an epitaxial layer and a barrier layer are sequentially grown on the semiconductor substrate, and three main electrodes C are arranged on the surface of the barrier layer. 0 、C 1 and C 2 , main electrode C 1 and C 2 About the main electrode C 0 Centrosymmetric, main electrode C 0 and C 1 Between, C 0 and C 2 There is a groove structure between them, and the groove structure on both sides is about the main electrode C 0 Centrosymmetric, and the width of the groove structure is less than C 0 and C 1 or C 0 and C 2 Inter-electrode spacing, main electrode C 0 and C 1 Sensing electrodes S are arranged on the groove structure between 1 , main electrode C 0 and C 2 Sensing electrodes S are arranged on the groove structure between 2 . The invention forms grooves by shallow etching in selected areas, retains the intact heterojunction interface under the grooves, can take advantage of the high mobility of two-dimensional electron gas, and can ensure that the carriers in motion under weak magnetic field signals can generate effectively offset, thereby increasing the detection sensitivity of the device.

The invention provides a packaging chip, a circuit board assembly and electronic equipment. The packaging chip comprises a dielectric layer, a redistribution layer and a turn-off power line group. The dielectric layer is provided with at least one functional circuit unit and at least one power switch unit. The redistribution layer and the dielectric layer are stacked. The turn-off power line group comprises at least one first turn-off power line and at least one second turn-off power line, the first turn-off power lines are arranged on the dielectric layer, the second turn-off power lines are arranged on the redistribution layer, and the resistance of the second turn-off power lines is smaller than that of the first turn-off power lines. The first turn-off power line and the second turn-off power line are electrically connected, and both the first turn-off power line and the second turn-off power line are electrically connected between the output end of the power switch unit and the power end of the functional circuit unit. The packaging chip, the circuit board assembly and the electronic equipment provided by the invention are small in voltage drop.

The invention discloses a micro-LED display panel, a micro-LED pixel circuit and a display device, comprising a display area and a non-display area, the non-display area is located around the micro-LED display panel; Including a light-shielding layer, the light-shielding layer includes: a first light-shielding layer adjacent to the non-display area and a second light-shielding layer not adjacent to the non-display area; the non-display area includes VDD surrounding conductive lines and VSS Surrounding conductive lines, the VSS surrounding conductive lines surround the first light-shielding layer, the VDD surrounding conductive lines surround the VSS surrounding conductive lines; the VDD surrounding conductive lines and the VSS surrounding conductive lines The wires are connected to the chip-on-chip film through the bypass channel.

The invention discloses a test process of a nitrile additive applied to a lithium cobalt oxide system electrolyte, and relates to the technical field of lithium ion batteries, and the test process comprises the preparation process of a soft package battery cell: (1) manufacturing a positive pole piece; (2) manufacturing a negative pole piece; (3) manufacturing a PE isolating membrane; (4) dissolving lithium hexafluorophosphate (LiPF6) in ethylene carbonate (EC), diethyl carbonate (DEC) and propyl propionate (PP) in a mass ratio of 1: 1: 1 in a glove box under argon protection, and then adding fluoroethylene carbonate (FEC), 1, 3-propane sultone (PS), and any one of adiponitrile (ADN), succinonitrile (SN), ethylene glycol bis (propionitrile) ether (DENE) or 1, 3, 6-hexanedinitrile (HTCN) to prepare an electrolyte; and (5) performing winding, assembling, baking, welding and sealing, liquid injection, formation and the like on the positive pole piece, the negative pole piece, a PE isolating membrane and electrolyte to prepare the soft package battery cell. A test result shows that the nitrile additive can improve the high-voltage resistance of the lithium ion battery electrolyte, and the high-temperature storage performance is particularly remarkably improved.

A printed circuit board includes a baseboard, first and second conductive wires, a fuse, a 5V connector, a USB connector, and a CPU. The 5V connector is electrically connected to a first end of the fuse through the first conductive wire, and electrically connected to a voltage pin of the CPU voltage regulating chip through the second conductive wire. A voltage pin of the USB connector is connected to a second end of the fuse. The 5V connector outputs a 5V system voltage to the USB connector through the first conductive wire and the fuse, thus providing a voltage to a USB device, and also outputs the 5V system voltage to the CPU voltage regulating chip through the second conductive wire, thus signaling the CPU voltage regulating chip to convert the 5V system voltage and provide the converted voltage to a CPU.

The embodiment of the invention discloses a rocker switch. The rocker switch comprises a silver bridge, a supporting part and a conductive connecting part used for connecting the silver bridge with the supporting part electrically, the silver bridge is hinged to the supporting part, one end of the conductive connecting part is connected with the silver bridge, and the other end of the conductive connecting part is connected with the supporting part. The conductive connecting part is added to the rocker switch, so that it is guaranteed that the silver bridge and the supporting part are electrically connected all the time when the silver bridge bounces briefly in a life test process, electrocorrosion to the hinge joint between the silver bridge and the supporting part can be reduced when the silver bridge and the supporting part bounce briefly, and energization performance after a life test is improved. The rocker switch has good durability.

The embodiment of the invention discloses a rocker switch. The embodiment of the present invention includes: a silver bridge, a support and an elastic element, the silver bridge and the support are hinged, the first end of the elastic element is connected to the silver bridge, and the second end is fixedly connected to a rocker switch. The elastic element in the embodiment of the present invention can give the silver bridge an elastic force to softly absorb the harmful elastic energy when the silver bridge bounces briefly when the silver bridge bounces briefly, thereby reducing the tension between the silver bridge and the support at the hinge when the silver bridge bounces briefly. Electrocorrosion improves the electrical performance after the life test, and the rocker switch has good durability.