Nitride-based power device with carbon nanotube micro channel radiator and preparation method of power device

Abstract

The invention discloses a nitride-based power device with a carbon nanotube micro channel radiator and a preparation method of the power device. The device comprises a substrate, an insulating dielectric layer, electrode pads, a GaN-based HEMT device and a CNT micro channel radiator distributed from bottom to top; the electrode pads include a source electrode pad, a drain electrode pad and a gateelectrode pad; the GaN-based HEMT device comprises an epitaxial layer structure, a gate electrode, a source electrode and a drain electrode; the electrodes of the GaN-based HEMT device are aligned, the electrode pads are bonded and connected with the substrate, and an upside-down packaging structure is realized; and the CNT micro channel radiator used on the substrate material of the upside-down GaN-based HEMT device and serves as a radiating channel between the outside and the device surface. A self-heating effect of the GaN-based HEMT device is reduced, the thermal resistance of the device is reduced, and the thermal reliability of the GaN-based HEMT device under strong electric field, high temperature and large power are improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor microelectronics, and in particular relates to a novel structure and a preparation method for improving the heat dissipation effect of an AlGaN / GaN HEMT flip-chip device through a carbon nanotube microchannel radiator. Background technique [0002] GaN materials have good thermal and electrical properties and chemical stability, such as wide band gap, high breakdown electric field, high thermal conductivity, corrosion resistance and radiation resistance, etc., and are ideal for preparing high frequency, high temperature, high voltage, high power devices ideal material. [0003] AlGaN / GaN heterojunction has extremely strong piezoelectric polarization and spontaneous polarization effects, forming a high concentration of two-dimensional electron gas (2DEG) at the heterojunction interface, high electron mobility transistor based on AlGaN / GaN heterojunction (HEMT) have broad application prospect...

AI Technical Summary

Problems solved by technology

[0005] Aiming at the problems of poor heat dissipation effect and low reliability of GaN power devices under the positive structure, the present invention proposes a new flip-chip structure based on CNT microchannel heat sink and its preparation method, and uses CNT microchannel heat dissipation on the flip-chip structure The heat dissipation of the device effectively reduces the peak junction temperature of the AlGaN / GaN HEMT device, increases the current density of the device, and suppresses the current collapse effect of the device, thereby improving the stability and stability of GaN-based microwave power devices under high-power and high-voltage conditions. reliability

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