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Method for stabilizing surface conducting layer of transition oxide through hafnium oxide film

A technology of hafnium oxide and transition group, which is applied in the direction of coatings, circuits, electrical components, etc., can solve the problem of ion bombardment of transition group oxide surface conductive layer instability and other problems, achieve good lattice matching characteristics, good protection performance, high The effect of chemical stability

Inactive Publication Date: 2018-08-14
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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Problems solved by technology

[0004] The object of the present invention is to aim at the defects and deficiencies in the prior art, to provide a method for stabilizing the surface conductive layer of the transition group oxide with a hafnium oxide film, and to solve the ion bombardment of the surface conductive layer of the transition group oxide by adopting the method of surface passivation Unstable technical issues, improved stability of the surface conductive layer

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  • Method for stabilizing surface conducting layer of transition oxide through hafnium oxide film
  • Method for stabilizing surface conducting layer of transition oxide through hafnium oxide film

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Embodiment Construction

[0014] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments.

[0015] In this embodiment, a method for stabilizing the conductive layer on the surface of transition group oxides with a hafnium oxide thin film, the structure is as follows figure 1 As shown, in this embodiment, hafnium oxide ceramics are used as the target material, and single crystal strontium titanate of 5mm*5mm, (100) crystal orientation is used as the substrate, and the specific steps are as follows:

[0016] Step 1: Clean the 5mm*5mm, (100) crystalline monocrystalline strontium titanate as the substrate with acetone / alcohol;

[0017] Step 2: Using Ar + The above-mentioned single crystal strontium titanate substrate was bombarded. Fix the substrate on the stage, and then evacuate the cavity to 3.0×10 -4 Pa below, then pass pure argon into the cavity to keep the pressure at 2.0×10 -2 Pa, after the air pressure is stabilized, adjust t...

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Abstract

The invention belongs to the technical field of semiconductor device manufacturing and provides a method for stabilizing a surface conducting layer of a transition oxide through a hafnium oxide film for solving the technical problem that the surface conducting layer of an ion bombardment transition oxide is unstable. The hafnium oxide film covers the surface conducting layer of the transition oxide as a passivation layer. Compared with other materials, the hafnium oxide film as a surface passivation material has the advantages of a wide band gap (5.7eV), a higher dielectric constant (about 25), higher hardness, high chemical stability, better thermodynamic stability and good lattice matching characteristics, the protection performance on a device is good and the stability of the surface conducting layer of the transition oxide can be greatly improved; and meanwhile, the hafnium oxide film is prepared by adopting a pulsed laser deposition technique, so that the preparation technology has the advantages of being free of pollution, easy to control, simple in process and high in flexibility, and the stoichiometry can be accurately controlled.

Description

technical field [0001] The invention belongs to the technical field of semiconductor device manufacture, and in particular relates to a method for stabilizing a conductive layer on the surface of a transition group oxide based on a hafnium oxide thin film. Background technique [0002] With the development of industrial digitization and intelligence, sensors have been widely used in mechanical processing, temperature monitoring, wearable devices and smart transportation. As an important sensitive element, transition group oxides have been extensively studied. The transition group oxide itself is an insulating material with a perovskite structure. The physical properties can be adjusted through surface modification. Ion implantation is a commonly used method for surface modification. The transition group oxide can be formed by ion bombardment. The surface conductive layer has the advantages of controllable surface conductance, high mobility, and easy operation; it is widely ...

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Application Information

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IPC IPC(8): H01L21/02C23C14/28
CPCC23C14/28H01L21/02403H01L21/02425H01L21/02554H01L21/02631
Inventor 曾慧中周瑶幸代鹏何鹏王放张万里
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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