Cobalt ion doped carbon nitride hollow quadrangular prism and preparation method thereof

A quadrangular prism and carbon nitride technology, applied in chemical instruments and methods, nitrogen compounds, nitrogen and non-metallic compounds, etc., can solve the problems of single carbon nitride morphology, uneven ion doping, etc., and achieve simple preparation process , high reactivity, and high yield

Active Publication Date: 2018-08-21
UNIV OF JINAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Aiming at the shortcomings of the existing ion-doped carbon nitride, such as single morphology and uneven ion doping

Method used

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  • Cobalt ion doped carbon nitride hollow quadrangular prism and preparation method thereof
  • Cobalt ion doped carbon nitride hollow quadrangular prism and preparation method thereof
  • Cobalt ion doped carbon nitride hollow quadrangular prism and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] 1.1 Reflux 8 g of melamine and 100 ml of deionized water at 100 °C until the melamine is completely dissolved to obtain an aqueous solution of melamine.

[0040] 1.2 Prepare cobalt chloride aqueous solution with a concentration of 0.1 g / ml, add 800 microliters of cobalt chloride aqueous solution into melamine aqueous solution, and reflux at 100°C for 30 minutes under stirring to fully mix melamine and cobalt chloride uniform.

[0041] 1.3 After the melamine and cobalt chloride are fully mixed, stop heating directly, and put the 100°C solution directly into 0°C ice water for rapid cooling to realize crystallization.

[0042] 1.4 The precipitated crystals were taken out from the solution, and the solution on the crystals was blotted dry on filter paper to obtain cobalt-doped melamine crystals.

[0043] 1.5 The cobalt-doped melamine crystal obtained above was heated to 550 °C at a heating rate of 2 °C / min under the protection of argon gas, and kept for 4 h, and then coole...

Embodiment 2

[0048] 2.1 Reflux 8 g of melamine and 100 ml of deionized water at 100 °C until the melamine is completely dissolved to obtain an aqueous solution of melamine.

[0049] 2.2 Prepare cobalt chloride solution with a concentration of 0.1 g / ml in cobalt chloride solution, add 1.6 ml of cobalt chloride solution into melamine solution, and reflux at 100°C for 30 minutes under stirring to fully mix melamine and cobalt chloride .

[0050] 2.3 After the melamine and cobalt chloride are fully mixed, stop heating directly, and put the solution at 100°C into ice water at 0°C for rapid cooling to realize crystallization.

[0051] 2.4 The precipitated crystals were taken out from the solution, and the solution on the crystals was blotted dry on filter paper to obtain cobalt-doped melamine crystals.

[0052] 2.5 The cobalt-doped melamine crystal obtained above was heated to 550 °C at a heating rate of 2 °C / min under the protection of argon gas, and kept for 4 h, and then cooled naturally wit...

Embodiment 3

[0056] 3.1 Reflux 8 g of melamine and 100 ml of deionized water at 100 °C until the melamine is completely dissolved to obtain an aqueous solution of melamine.

[0057] 3.2 Prepare cobalt chloride solution with a concentration of 0.1 g / ml in cobalt chloride solution, add 1.2 ml of cobalt chloride solution into melamine solution, and reflux at 100°C for 30 minutes under stirring to fully mix melamine and cobalt chloride .

[0058] 3.3 After the melamine and cobalt chloride are fully mixed, stop heating directly, and put the 100°C solution directly into 0°C ice water for rapid cooling to realize crystallization.

[0059] 3.4 The precipitated crystals were taken out from the solution, and the solution on the crystals was blotted dry on filter paper to obtain cobalt-doped melamine crystals.

[0060] 3.5 The cobalt-doped melamine crystal obtained above was heated to 550 °C at a heating rate of 2 °C / min under the protection of argon gas, and kept for 4 h, and then cooled naturally ...

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Abstract

The invention discloses a cobalt ion doped carbon nitride hollow quadrangular prism and a preparation method thereof. The side length of the outer side wall of the bottom surface of the hollow quadrangular prism is 300 to 400 nm; the edge length of the hollow quadrangular prism is 4 to 10 [mu]m; and the wall thickness of the hollow quadrangular prism is 20 to 50 nanometers. According to the invention, through two processes of crystallization and calcination, uniform doping of cobalt ions and formation of the morphology of the hollow quadrangular prism are realized. By utilizing the self-crystallization process of a crystal, the preparation method provided by the invention can improve the purity of raw materials, realizes uniform doping of the cobalt ions, and has the advantages of simple preparation process, good repeatability, high yield and universality. A product obtained by calcination has the morphology of the hollow quadrangular prism; and the morphology is novel and special, hashigher specific surface area compared with a traditional bulk morphology, and has great application prospects in the fields of photocatalytic degradation of organic compounds, hydrogen production byphotocatalysis, energy materials, analytical chemistry, etc. Meanwhile, the cobalt ions are uniformly distributed in a C3N4 azine ring network and are insusceptible to oxidization, so formation of oxide/carbon nitride heterojunction due to oxidation of the cobalt ions can be effectively avoided.

Description

technical field [0001] The invention relates to a carbon nitride hollow quadrangular prism doped with cobalt ions and a preparation method thereof, belonging to the technical field of semiconductor material preparation. Background technique [0002] As an organic semiconductor, carbon nitride has a band gap of about 2.7 eV and is a photocatalytic material with great application potential. Due to its excellent characteristics such as low synthesis cost, non-toxicity and stable physical and chemical properties, people have carried out a lot of exploration on it in recent years, but the disadvantages of carbon nitride such as poor conductivity and low specific surface area have greatly limited the development of carbon nitride. Practical applications of materials. [0003] Since 2009, people have carried out a lot of doping work on carbon nitride by grinding method, and found that the performance of doped carbon nitride material has been improved in terms of photocatalysis and...

Claims

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Application Information

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IPC IPC(8): C01B21/082B82Y40/00
CPCB82Y40/00C01B21/0605C01P2002/72C01P2004/03C01P2004/40C01P2004/61C01P2004/62C01P2004/64
Inventor 杨萍江志翔
Owner UNIV OF JINAN
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