A kind of silicon carbide ceramic and preparation method thereof

A silicon carbide ceramic and silicon carbide technology, applied in the field of ceramic materials, can solve problems such as the destruction of silicon dioxide protective film and the reduction of anti-oxidation performance, and achieve the effects of improving anti-oxidation performance, small quality change, and reducing oxygen diffusion

Active Publication Date: 2021-05-11
GUANGDONG UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The invention provides a method for preparing silicon carbide ceramics, which solves the technical problem in the prior art that the silicon dioxide protective film formed after oxidation of liquid-phase sintered silicon carbide ceramics is destroyed, resulting in a decrease in its oxidation resistance

Method used

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  • A kind of silicon carbide ceramic and preparation method thereof
  • A kind of silicon carbide ceramic and preparation method thereof
  • A kind of silicon carbide ceramic and preparation method thereof

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preparation example Construction

[0032] The invention provides a preparation method of silicon carbide ceramics, which solves the technical problem in the prior art that the silicon carbide protective film of silicon carbide ceramics is damaged during liquid phase sintering, resulting in the reduction of its anti-oxidation performance. The silicon carbide ceramic prepared by the method has high compactness and good oxidation resistance, and can be widely used in the fields of machinery, chemical industry, microelectronics, automobile, petroleum and processing.

[0033] The silicon carbide ceramic provided by the present invention and the preparation method thereof will be further described below.

Embodiment 1

[0035] (1) Silicon carbide (SiC) powder with a mass ratio of 90:6:4, alumina (Al) 2 O 3 ) powder and yttrium trioxide (Y 2 O 3 ) powder is mixed as the basic raw material to obtain SiC-Al 2 O 3 -Y 2 O 3 Mix powder. SiC-Al 2 O 3 -Y 2 O 3 Mixed powder with tantalum diboride (TaB) in a volume ratio of 85:15 2 ) powder is mixed and dissolved in ethanol to form silicon nitride (Si 3 N 4 ) ball is the ball milling medium, and the ball is milled on a planetary ball mill at a speed of 300 r / min for 8 hours. After wet mixing and drying, uniform SiC-Al is obtained. 2 O 3 -Y 2 O 3 -TaB 2 Mix powder.

[0036] (2) SiC-Al 2 O 3 -Y 2 O 3 -TaB 2 The mixed powder is sieved and granulated to obtain SiC-Al 2 O 3 -Y 2 O 3 -TaB 2 Granulated balls.

[0037] (3) SiC-Al 2 O 3 -Y 2 O 3 -TaB 2 The granulated balls were poured into a hot-pressed graphite mold, and in an argon atmosphere of 1 atm, the pressure was started when the temperature reached 1400 °C at a heating...

Embodiment 2

[0039] (1) SiC powder with a mass ratio of 90:6:4, Al 2 O 3 Powder and Y 2 O 3 Powder is mixed as basic raw material to obtain SiC-Al 2 O 3 -Y 2 O 3 Mix powder. SiC-Al 2 O 3 -Y 2 O 3 Mixed powder with TaB2 The powders were mixed in a volume ratio of 90:10 and dissolved in ethanol to form silicon nitride (Si 3 N 4 ) ball is the ball milling medium, and the ball is milled on a planetary ball mill at a speed of 300 r / min for 8 hours. After wet mixing and drying, uniform SiC-Al is obtained. 2 O 3 -Y 2 O 3 -TaB 2 Mix powder.

[0040] (2) SiC-Al 2 O 3 -Y 2 O 3 -TaB 2 The mixed powder is sieved and granulated to obtain SiC-Al 2 O 3 -Y 2 O 3 -TaB 2 Granulated balls.

[0041] (3) SiC-Al 2 O 3 -Y 2 O 3 -TaB 2 The granulated balls were poured into a hot-pressed graphite mold, and in an argon atmosphere of 1 atm, the pressure was started when the temperature reached 1400 °C at a heating rate of 10 °C / min, and the temperature reached 1800 °C while the press...

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Abstract

The invention relates to the field of ceramic materials, in particular to a silicon carbide ceramic and a preparation method thereof. The preparation method of silicon carbide ceramics provided by the present invention comprises the following steps: Step 1: SiC powder, alumina powder, Re 2 o 3 Powder blending to SiC‑Alumina‑Re 2 o 3 Mixed powder; Step 2: Mix the SiC-Alumina-Re 2 o 3 The mixed powder and tantalum diboride powder are mixed to obtain silicon carbide-alumina-Re 2 o 3 ‑Tantalum diboride mixed powder; Step 3: mix the silicon carbide‑alumina‑Re 2 o 3 - The tantalum diboride mixed powder is granulated and sintered to obtain the silicon carbide ceramics. The invention solves the technical problem in the prior art that the silicon dioxide protective film formed after oxidation of the liquid-phase sintered silicon carbide ceramic is destroyed, resulting in a decrease in its anti-oxidation performance. The silicon carbide ceramic prepared by the method has high density and good oxidation resistance, and can be widely used in the fields of machinery, chemical industry, microelectronics, automobile, petroleum and processing.

Description

technical field [0001] The invention relates to the field of ceramic materials, in particular to a silicon carbide ceramic and a preparation method thereof. Background technique [0002] Silicon carbide ceramics have the advantages of high temperature resistance, corrosion resistance, thermal shock resistance, wear resistance and good thermal conductivity. It is widely used in aerospace, nuclear energy, machinery, chemical industry, microelectronics, automobile, petroleum and processing fields. [0003] Silicon carbide ceramics can be used in harsh high temperature environments, mainly because a dense silicon dioxide film can be formed on its surface, which has good oxidation resistance. However, because silicon carbide is a strong covalent bond compound, its self-diffusion coefficient at high temperature is very low, which makes it difficult to sinter and densify it without adding sintering aids or even in solid-phase sintering. Therefore, the existing method usually real...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/565C04B35/622C04B35/645
CPCC04B35/575C04B35/622C04B2235/3217C04B2235/3224C04B2235/3225C04B2235/3813C04B2235/6562C04B2235/6565C04B2235/658C04B2235/9684
Inventor 郭伟明曾令勇牛文彬林华泰
Owner GUANGDONG UNIV OF TECH
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