A heterojunction thin film composed of the same metal and oxygen group elements and its preparation and application
A technology of the same metal and oxygen group elements, used in structural parts, electrical components, chemical instruments and methods, etc., can solve the problems of high requirements for thin film electrodes, limited deposition area, large salt consumption, etc., to achieve a wide range of applications, Simple equipment and good reproducibility
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Embodiment 1
[0099] Antimony oxide (Sb 2 O 3 ) / Antimony sulfide (Sb 2 S 3 ) Heterojunction preparation
[0100] 1. Pretreatment of the deposition substrate
[0101] Use 30×30×2mm FTO glass as the deposition substrate: a. Degreasing agent cleaning of the substrate: Using detergent as the degreasing agent, the glass substrate is placed in the detergent aqueous solution and cleaned by ultrasonic vibration at a high temperature of 30°C 60min. b. High-temperature lye cleaning of the substrate: add 100mL ammonia water and 100mL deionized water into a 500mL beaker, place the glass substrate in the above solution, and ultrasonically shake for 30min at a high temperature of 50°C. c. Ultrasonic vibration ethanol cleaning of the substrate: Take 200 mL of absolute ethanol and add it to a 500 mL beaker, put the glass substrate in ethanol, and clean it with ultrasonic vibration at a high temperature of 40°C for 60 minutes. d. Ultrasonic oscillating water washing of the substrate: Place the above glass subs...
Embodiment 2
[0110] Bismuth oxide (Bi 2 O 3 ) / Bismuth sulfide (Bi 2 S 3 ) Heterojunction preparation
[0111] 1. Pretreatment of the deposition substrate
[0112] The method of Example 1 was used to pretreat the substrate.
[0113] 2. Preparation of metal oxide pre-layer film
[0114] Weigh 1.49 g of bismuth nitrate in a beaker, add 10 mL of concentrated nitric acid, and then add deionized water to prepare 60 mL of bismuth nitrate solution. Add saturated sodium hydroxide solution dropwise to the solution, adjust the pH to 10 (the temperature is lower than 40°C) to obtain a bismuth nitrate precursor solution, put the pretreated deposition substrate into the precursor solution, and deposit it at 60°C for 60 minutes , Then wash several times with deionized water and dry. The thickness of the oxide layer is 5 μm.
[0115] 3. Vulcanization heat treatment
[0116] After washing and drying the above-mentioned thin film prefabricated layer, it is placed in the reaction equipment, and an appropriate amount...
Embodiment 3
[0119] Indium oxide (ln 2 O 3 ) / Indium sulfide (ln 2 S 3 ) Heterojunction preparation
[0120] 1. Pretreatment of the deposition substrate
[0121] The method of Example 1 was used to pretreat the substrate.
[0122] 2. Preparation of metal oxide pre-layer film
[0123] Weigh 0.88 g of indium chloride in a beaker, add 10 mL of concentrated hydrochloric acid, and then add deionized water to prepare 60 mL of indium chloride solution. Add saturated sodium hydroxide solution dropwise to the solution, adjust the pH to 8 (the temperature is lower than 40°C) to obtain the indium chloride precursor solution, put the pretreated deposition substrate into the precursor solution, and deposit at 90°C for 40 minutes After that, it was washed several times with deionized water and dried. The thickness of the oxide layer is 600 nm.
[0124] 3. Vulcanization heat treatment
[0125] After washing and drying the above-mentioned thin film prefabricated layer, it is placed in the reaction equipment, and a...
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