[010]-directional bismuth vanadate nanotube crystal array growing on transparent conductive substrate and preparation and application thereof

A transparent conductive, crystal array technology, applied in the direction of catalyst activation/preparation, hydrogen production, chemical instruments and methods, etc., can solve the problems of development of high-performance semiconductor devices, insufficient surface area, loss, etc., to facilitate charge transport, The effect of large specific surface area and excellent electron transport speed

Active Publication Date: 2018-09-28
GUANGZHOU UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The literature search results show that Wang Wenzhong's research group prepared the powder non-array BiVO by the reflux method in 2007. 4 Nanotubes (Single-Crystalline BiVO 4 Microtubes with Square Cross-Sections: Microstructure, Growth Mechanism, and Photocatalytic Property, J.Phys.Chem.C2007, 111, 13659-13664), however, there has not yet been the addition of morphology regulators and simple hydrothermal methods in conductive glass Direct preparation of bismuth vanadate (BiVO) grown

Method used

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  • [010]-directional bismuth vanadate nanotube crystal array growing on transparent conductive substrate and preparation and application thereof
  • [010]-directional bismuth vanadate nanotube crystal array growing on transparent conductive substrate and preparation and application thereof
  • [010]-directional bismuth vanadate nanotube crystal array growing on transparent conductive substrate and preparation and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] Example 1: [010] BiVO grown on a transparent conductive substrate 4 Preparation of Nanotube Crystal Array

[0048] Weigh 2.5mmol of bismuth nitrate, 2.5mmol of ammonium metavanadate and 5.0mmol of citric acid and dissolve in 7mL of HNO with a volume fraction of 23.3% 3 In the solution, stir for 15 minutes; take 7mL of the above solution into a 25mL glass beaker, add 1.2g PEG-6000 and 2mL acetic acid, seal and stir until it is completely dissolved, then let stand for 1 hour to obtain a viscous BiVO 4 Blue seed liquid

[0049] Using spin coating method, rotate speed 3000r / min, keep 30s, add 200μL BiVO in step (1) 4 The seed liquid was spin-coated on a clean transparent conductive substrate FTO glass and placed in a muffle furnace, heated to 450°C at a rate of 2°C / min, and calcined for 5 hours to obtain BiVO 4 The seed layer is placed in the PTFE lining of the reactor;

[0050] In a 50mL glass beaker, add 12mL deionized water and 3mL, with a mass fraction of 68% concentrated HNO 3...

Embodiment 2

[0053] Example 2: [010] BiVO grown on a transparent conductive substrate 4 Preparation of Nanotube Crystal Array

[0054] Weigh 4.5mmol of bismuth nitrate, 4.5mmol of ammonium metavanadate and 8.5mmol of citric acid and dissolve in 12mL of HNO with a volume fraction of 23.3% 3 In the solution, stir for 15min; take 10mL of the above solution into a 25mL glass beaker, add 1.2g PEG-6000 and 2.5mL acetic acid, seal and stir until it is completely dissolved, then let it stand for 1 hour to obtain a viscous BiVO 4 Blue seed liquid

[0055] Using spin coating method, rotating speed 3000r / min, keep for 40s, add 200μL of BiVO in step (1) 4 The seed liquid was spin-coated on a clean transparent conductive substrate FTO glass and placed in a muffle furnace, heated to 500°C at a rate of 2°C / min, and calcined for 7 hours to obtain BiVO 4 The seed layer is placed in the PTFE lining of the reactor;

[0056] In a 50mL glass beaker, add 16mL deionized water and 4mL, with a mass fraction of 68% concent...

Embodiment 3

[0059] Example 3: [010] BiVO grown on a transparent conductive substrate 4 Preparation of Nanotube Crystal Array

[0060] Weigh 2.5mmol of bismuth nitrate, 2.5mmol of ammonium metavanadate and 5.0mmol of citric acid and dissolve in 7mL of HNO with a volume fraction of 23.3% 3 In the solution, stir for 15 minutes; take 7mL of the above solution into a 25mL glass beaker, add 0.9g PEG-6000 and 2mL acetic acid, seal and stir until it is completely dissolved and then stand for 1 hour to obtain a viscous BiVO 4 Blue seed liquid

[0061] Using spin coating method, rotating speed 4000r / min, keeping for 30s, add 350μL BiVO in step (1) 4 The seed liquid was spin-coated on a clean transparent conductive substrate FTO glass and placed in a muffle furnace, heated to 450°C at a rate of 2°C / min, and calcined for 5 hours to obtain BiVO 4 The seed layer is placed in the PTFE lining of the reactor;

[0062] In a 50mL glass beaker, add 3mL of 68% concentrated HNO 3 , 6mL of deionized water and 6mL of mo...

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Abstract

The invention belongs to the technical field of semiconductor nanomaterials and discloses a [010]-directional bismuth vanadate nanotube crystal array growing on a transparent conductive substrate anda preparation and application thereof. The method comprises the steps that a bismuth vanadate seed is firstly prepared on the transparent conductive substrate through a sol-gel method, then a BiVO4 nanotube crystal array is prepared in the presence of a morphological control agent by using a hydrothermal/solvothermal method and a high-pressure autoclave, and finally the monoclinic-phase [010]-directional bismuth vanadate nanotube crystal array growing on the transparent conductive substrate can be obtained by putting prepared BiVO4 nanotubes in a tube furnace for high-temperature annealing. The one-dimensional nanotube array directly grows on the transparent conductive substrate, the process of applying the one-dimensional single crystal material in a semiconductor device is simplified, notoxic or hazardous substance is produced in the whole preparation process, the environment is not polluted, human health is not harmed, and the [010]-directional bismuth vanadate nanotube crystal array is safe and friendly to the environment.

Description

Technical field [0001] The invention belongs to the technical field of semiconductor nanomaterial preparation, and particularly relates to a [010] direction bismuth vanadate nanotube crystal array grown on a transparent conductive substrate, and preparation and application thereof. Background technique [0002] Among the reported semiconductor photocatalytic materials, semiconductors with a narrow energy band gap are favored due to their strong light absorption ability, such as WO 3 , C 3 N 4 , Fe 2 O 3 , BiVO 4 Wait. Of which bismuth vanadate (BiVO 4 ) Due to its low starting potential, the position of the valence band is similar to the potential required for photolysis of water, and the carrier lifetime and hole diffusion distance are longer than other narrow band gap semiconductors, it has become a highly potential semiconductor material. BiVO under natural conditions 4 There are mainly the following three crystal phases: tetragonal zircon structure (z-t), monoclinic scheelite...

Claims

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Application Information

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IPC IPC(8): B01J23/22B01J37/10B01J37/08C01B3/04
CPCB01J23/22B01J35/0033B01J35/004B01J37/08B01J37/10C01B3/042C01B2203/1041Y02E60/36
Inventor 秦冬冬耿园园段世芳张平刘文峰邓湘舟
Owner GUANGZHOU UNIVERSITY
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