[010]-directional bismuth vanadate nanotube crystal array growing on transparent conductive substrate and preparation and application thereof

Abstract

The invention belongs to the technical field of semiconductor nanomaterials and discloses a [010]-directional bismuth vanadate nanotube crystal array growing on a transparent conductive substrate anda preparation and application thereof. The method comprises the steps that a bismuth vanadate seed is firstly prepared on the transparent conductive substrate through a sol-gel method, then a BiVO4 nanotube crystal array is prepared in the presence of a morphological control agent by using a hydrothermal / solvothermal method and a high-pressure autoclave, and finally the monoclinic-phase [010]-directional bismuth vanadate nanotube crystal array growing on the transparent conductive substrate can be obtained by putting prepared BiVO4 nanotubes in a tube furnace for high-temperature annealing. The one-dimensional nanotube array directly grows on the transparent conductive substrate, the process of applying the one-dimensional single crystal material in a semiconductor device is simplified, notoxic or hazardous substance is produced in the whole preparation process, the environment is not polluted, human health is not harmed, and the [010]-directional bismuth vanadate nanotube crystal array is safe and friendly to the environment.

Description

Technical field [0001] The invention belongs to the technical field of semiconductor nanomaterial preparation, and particularly relates to a [010] direction bismuth vanadate nanotube crystal array grown on a transparent conductive substrate, and preparation and application thereof. Background technique [0002] Among the reported semiconductor photocatalytic materials, semiconductors with a narrow energy band gap are favored due to their strong light absorption ability, such as WO 3 , C 3 N 4 , Fe 2 O 3 , BiVO 4 Wait. Of which bismuth vanadate (BiVO 4 ) Due to its low starting potential, the position of the valence band is similar to the potential required for photolysis of water, and the carrier lifetime and hole diffusion distance are longer than other narrow band gap semiconductors, it has become a highly potential semiconductor material. BiVO under natural conditions 4 There are mainly the following three crystal phases: tetragonal zircon structure (z-t), monoclinic scheelite...

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Problems solved by technology

[0004] The literature search results show that Wang Wenzhong's research group prepared the powder non-array BiVO by the reflux method in 2007. 4 Nanotubes (Single-Crystalline BiVO 4 Microtubes with Square Cross-Sections: Microstructure, Growth Mechanism, and Photocatalytic Property, J.Phys.Chem.C2007, 111, 13659-13664), however, there has not yet been the addition of morphology regulators and simple hydrothermal methods in conductive glass Direct preparation of bismuth vanadate (BiVO) grown along a fixed crystal direction on a substrate 4 ) report of nanotube crystal array

Although the reported reflux method provides the possibility for the preparation of tubular bismuth vanadate nanotube crystals, the powder form loses the advantage of a one-dimensional nanotube array as a charge transport channel, and the larger tubular diameter results in insufficient surface area. There are great constraints on the development of high-performance semiconductor devices in practical applications

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