Approximate ultraviolet exposure and thin film growth method-based method for preparing nanometer passage
A nano-channel and proximity technology, applied in the field of micro-electromechanical research, can solve the problems of difficult nano-channel processing, low production efficiency and high manufacturing cost, and achieve the effects of low price, high production efficiency and easy packaging
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[0030] The specific implementation manner of the present invention will be described in detail below in combination with the technical scheme and accompanying drawings.
[0031] like figure 1As shown, the manufacturing process steps of the silicon nano-mold are as follows:
[0032] (a) Pour a small amount of hexamethyldisiloxane (HMDS) into the drying tower, let it stand for 10 minutes, make the drying tower full of HMDS2 steam, and then place the cleaned 4-inch silicon wafer 1 in the drying tower Treat for 20 minutes, take it out and preheat it on a hot plate for 3 minutes, so that a layer of adhesive layer is formed on the surface of the silicon wafer 1, and the bonding force between the silicon wafer 1 and the AZ703 photoresist 3 is improved.
[0033] (b) Spin-coat positive AZ703 photoresist 3 on the surface-modified silicon wafer 1 at a low speed of 600r / s for 9s, and at a high speed of 7000r / s for 30s. Pre-bake on a hot plate at 85° C. for 30 minutes to remove the solve...
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