Stable compound semiconductor sunlight water decomposition hydrogen-production electronic device, an electrode system and a preparation method thereof

Abstract

The invention relates to a stable compound semiconductor sunlight water decomposition hydrogen-production electronic device, an electrode system and a preparation method thereof. The sunlight water decomposition hydrogen-production electronic device sequentially comprises a substrate, a back electrode, a CZTS absorbing layer, a buffer layer, a wide-band gap semiconductor protection layer and a nanometer metal particle layer, wherein the CZTS absorbing layer is prepared by adopting a method of spraying pyrolysis and then vulcanizing and annealing; the buffer layer is prepared by adopting a chemical water bath deposition method; and the wide-band gap semiconductor protection layer is prepared by adopting the chemical water bath deposition method or an atomic layer deposition method. The preparation method is simple, and the prepared device structure can utilize solar energy, so that the high-efficiency and stable hydrogen production can be realized under the external bias voltage.

Description

technical field [0001] The invention relates to the field of photo-splitting water, in particular to a stable compound semiconductor solar photo-splitting water hydrogen production electronic device, an electrode system and a preparation method thereof. Background technique [0002] Human society's demand for clean energy has become more and more urgent with the consumption of fossil fuels. Hydrogen, as a high calorific value, green and non-polluting renewable energy, has also attracted the attention of many scholars. In 1972, the Japanese scientist Fujishima firstly irradiated sunlight directly to TiO 2 Inspired by the decomposition of water on the surface to generate hydrogen, the researchers have successfully opened up a new field of hydrogen production by using visible light to split water by simulating the photosynthesis system in nature. Among them, the semiconductor device designed by taking advantage of the light absorption characteristics of semiconductor photoele...

AI Technical Summary

Problems solved by technology

However, there are still some materials, due to their large band gap, low absorption and utilization of light, and low photoelectric conversion efficiency, it is difficult to meet industrial production

TiO 2 For example, due to its forbidden band width of 3.2eV, it can only absorb less than 7% of the ultraviolet light in sunlight, which leads to poor photoresponse ability of the material and a decrease in hydrogen production efficiency.

[0004] However, when CdS is exposed to light, after the photogenerated electrons enter the external circuit, the positively charged holes are easy to oxidize it to Cd. 2+ , the heterojunction change with CZTS composition and the deterioration of its own photocatalytic performance have become its disadvantages that cannot be ignored in the application of photo-splitting water to hydrogen production.

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