Self-separation method for preparation of GaN substrate

Abstract

The invention discloses a self-separation method for preparation of a GaN substrate, which includes steps of: 1) on a sapphire substrate, growing a uniformly-distributed Ga2O3 film, wherein thicknessrange of the film is 1-5 [mu]m; 2) in an ammonia atmosphere, performing partial nitridation to the surface layer of the film, thus forming a GaN / Ga2O3 composite film in a porous latticed distributionstructure; 3) on the composite film, performing halide vapor phase epitaxy growth of a GaN thick film, thus forming a low stress and high quality GaN thick film; 4) after the epitaxy is completed, cooling the material to room temperature, so that the epitaxy GaN thick film is automatically separated from the substrate, thus obtaining the self-supporting GaN substrate.

Description

technical field [0001] The invention relates to a self-separation method for preparing a GaN substrate, which belongs to the technical field of semiconductor materials. Background technique [0002] Group III-V nitride materials (also known as GaN-based materials) mainly composed of GaN, InGaN, and AlGaN alloy materials are new semiconductor materials that have attracted much attention in the world in recent years. GaN-based materials are direct bandgap wide bandgap semiconductor materials with continuously variable direct bandgap between 1.9-6.2eV, excellent physical and chemical stability, high saturation electron drift velocity, high breakdown field strength and high thermal conductivity It has important applications in the preparation of short-wavelength semiconductor optoelectronic devices and high-frequency, high-voltage, and high-temperature microelectronic devices. It can be used to manufacture light-emitting devices such as blue, purple, and ultraviolet bands, detec...

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