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Ink composition with high heat resistance and high light transmittance and purpose thereof

An ink composition and high light transmittance technology, applied in ink, applications, household appliances, etc., can solve the problems of low light transmittance, air permeability, heat resistance, etc., achieve low water vapor transmission rate, reduce shrinkage volume, and good The effect of heat resistance

Active Publication Date: 2019-01-22
ZHEJIANG FORST NEW MATERIAL RES INST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current ink composition is still difficult to simultaneously meet the performance index requirements of high light transmittance, high photocuring rate, low air permeability and high heat resistance that are increasingly required by thin film packaging.

Method used

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  • Ink composition with high heat resistance and high light transmittance and purpose thereof
  • Ink composition with high heat resistance and high light transmittance and purpose thereof
  • Ink composition with high heat resistance and high light transmittance and purpose thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0074] The preparation of the inorganic barrier layer can deposit a layer of SiNx by PECVD, with a thickness ranging from 0.1 μm to 20 μm.

[0075] In addition, there are many options for physical property testing. For example, some implementation methods of cured films have Fourier Transform Infrared (FT-IR) real-time spectroscopy to measure the degree of curing or a weighing method to determine the degree of curing.

[0076] The organic thin film ink composition of the present application can be used for the encapsulation of flexible OLED display devices, and the flexible OLED device mainly comprises: organic light-emitting diodes, inorganic layers used for encapsulation, and organic layers are laminated. The OLED device device includes a substrate ITO, a device (organic light emitting diode) for the device formed on the substrate, and a SiN formed on the package member and including an inorganic barrier layer x , organic barrier layer, inorganic barrier layer SiN X Stacked...

Embodiment 1

[0079] Embodiment 1: Preparation of silicon-containing monomer 1-1

[0080] Silicon-containing monomer 1-1 is prepared according to the following reaction formula:

[0081]

[0082] 1.1. Synthesis of TM-1

[0083] Add 4.8g (0.2mol) magnesium chips in a 250mL three-necked flask equipped with a constant pressure dropping funnel, an electric stirrer and a condenser tube, and use high-purity N 2 permutation three times, at N 2 Add 40mL of tetrahydrofuran under protection to cover the magnesium chips, drop a small amount of mixed solution prepared by 47 g (0.2moL) p-dibromobenzene and 100mL tetrahydrofuran at room temperature to initiate the reaction, and then slowly add the mixed solution dropwise to maintain a slight reflux state The reaction was completed dropwise within 1 hour, and when there was no reflux, it was heated to reflux in an oil bath for 1 hour. After cooling to room temperature, 11.6 g (0.09 moL) of dichlorodimethylsilane was added dropwise in a cold water ba...

Embodiment 2

[0091] Embodiment 2: Preparation of silicon-containing monomer 1-2

[0092] Silicon-containing monomer 1-2 is prepared according to the following reaction formula:

[0093]

[0094] Add 250ml ethyl acetate, 16g (0.05moL) bis(p-bromophenylsilyl) dimethyl silicon and 6g (0.1moL) Allyl alcohol, with high purity N 2 permutation three times, at N 2 Under protection, 4.8 g of palladium carbon (5% content) was added to maintain the reaction (80° C.) under a slight reflux state for 4 hours.

[0095] Ethyl acetate was evaporated to obtain 22g of crude product, 100mL of dichloromethane and 12mL of triethylamine were added, the reaction solution was cooled to 0°C, 20g (0.2mol) of 2-methacryloyl chloride was slowly added dropwise, and the reaction was kept at 0°C overnight. Residual solvent was removed by distillation and purified by column chromatography to obtain 20.88g of product with a yield of 72%, purity: 99.3%, M / e: 580.

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Abstract

The invention provides an ink composition with high heat resistance and high light transmittance. The ink composition is an ultraviolet light curing material, which comprises a silicon-containing monomer having a mass percentage of 15 to 80%, a photocrosslinking initiator having the mass percentage of 1 to 10%, and a light curing monomer having the mass percentage of 15 to 75%. The ink compositionis used for film packaging of an OLED device, is capable of effectively blocking water and oxygen, and has high heat resistance and high transparency characteristics, and further prolongs the servicelife of the OLED device.

Description

technical field [0001] The invention relates to an ultraviolet light curing material, in particular to an ink composition with high heat resistance and high transparency applicable to organic light-emitting OLED devices. Background technique [0002] Organic Light-Emitting Diodes (OLEDs) have all-solid-state, active light-emitting, high brightness, high contrast, ultra-thin and ultra-light, low cost, low power consumption, no viewing angle limitation, wide operating temperature range, etc. characteristics, and can be fabricated on a flexible, light, and durable plastic substrate, which can realize a truly flexible display, and is a technology that best meets people's requirements for future displays. [0003] Compared with liquid crystal display (LCD), organic electroluminescent device (OLED) has low driving voltage, high luminous brightness and luminous efficiency, wide luminous viewing angle, and fast response speed; in addition, it is ultra-thin and can be fabricated on f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09D11/101
CPCC09D11/101
Inventor 洪海兵周光大林建华
Owner ZHEJIANG FORST NEW MATERIAL RES INST CO LTD
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