Preparation method for semiconductor material

Abstract

The invention discloses a preparation method for semiconductor material The preparation method comprises the steps that ethylene and / or acetylene are / is adopted asa carbon source; a chemical vapour deposition method is adopted, and graphene containing surface defect grows on a substrate which metal catalyst is not loaded; and in addition, the grapheme which is formed on the substrate and containsthe surface defects is adopted as a substrate body, and a semiconducting material epitaxially grows on the substrate body directly. According to the preparation method for the semiconductor materials,the graphene containing the great number of defects can be directly prepared through the chemical vapour deposition method; chemical treatment is not needed to be additionally conducted on the surface of the graphene; surface chemistry activity of the graphene can be improved; the graphene which is large in size and is uniformly provided with the great number of defects is obtained; The obtainedgraphene is directly adopted as the substrate body to grow the semiconducting material; transfer is not needed; and the problem that contamination is introduced in the substrate transfer process, so that the growing semiconducting material has macroscopic defects is avoided.

Description

technical field [0001] The invention relates to a method for preparing a semiconductor material, in particular to a method for directly growing a semiconductor material with defective graphene as a substrate, and belongs to the technical field of semiconductor preparation technology. Background technique [0002] In 2004, British scientists discovered that the sp 2 Graphene, a new type of two-dimensional atomic crystal composed of hybrid-connected monoatomic layers, whose basic structural unit is the most stable six-membered benzene ring in organic materials, is currently the most ideal two-dimensional nanomaterial. Single-layer graphene refers to graphite with only one carbon atomic layer thickness, and C-C is connected by covalent bonds to form a honeycomb structure. In graphene, each carbon atom is connected to other 3 carbon atoms through a strong σ bond (the strongest chemical bond in nature). These strong C-C bonds make graphene sheets have excellent mechanical proper...

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Problems solved by technology

However, due to the lack of dangling bonds on the surface of graphene, direct epitaxial growth is difficult, and the grown semiconductor material has a large number of stacking faults, dislocations, etc., and the defect density is much higher than that of materials that can be applied to conventional devices.

On the other hand, the existing graphene is basically grown on the substrate supporting the metal catalyst. When used as a substrate, it needs to be separated from the metal catalyst and transferred out for use, but it will inevitably be polluted during the transfer process. , resulting in quality problems with semiconductor materials grown on it as a substrate

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