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Flexible molybdenum disulfide phototransistor and preparation method thereof

A technology of phototransistor and molybdenum disulfide, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of complex steps of flexible phototransistor methods, high manufacturing costs of flexible phototransistors, and inapplicability of flexible transistors, and achieve the difficulty of manufacturing process Low, improved photoelectric performance, narrow bandgap effect

Active Publication Date: 2019-02-12
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current flexible phototransistor has the following problems: 1) the photoelectric performance of the flexible phototransistor is lower than that of the rigid phototransistor; 2) the manufacturing process of the flexible phototransistor is not compatible with the existing rigid phototransistor, such as high temperature process Not suitable for flexible transistors; 3) The method steps of making flexible phototransistors are more complicated than ordinary transistors; 4) The manufacturing cost of flexible phototransistors is high

Method used

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  • Flexible molybdenum disulfide phototransistor and preparation method thereof
  • Flexible molybdenum disulfide phototransistor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Example 1, preparing a flexible molybdenum disulfide phototransistor with a molybdenum disulfide film thickness of 5.2 nm.

[0034] Step 1: Clean the silicon substrate.

[0035] will have a 280nm thick SiO 2 The p-type heavily doped silicon wafers were ultrasonically cleaned in acetone and isopropanol for 15 minutes to remove surface pollutants, and dried with a nitrogen gun after cleaning.

[0036] Step 2: Preparation of MoS on the cleaned substrate 2 film.

[0037] The 5.2nm thick MoS was first coated with scotch tape 2 Thin films from MoS 2 peel off on solid;

[0038] MoS 2 The tape of the film is tightly attached to the silicon substrate that has been cleaned in step 1;

[0039] Then tear off the scotch tape to make the MoS 2 A thin film remains on the silicon wafer.

[0040] Step 3: In MoS 2 Electrode patterns are prepared on the film.

[0041] 3a) With MoS 2 Spin-coat MICROPOSIT S1811 photoresist with a thickness of 4 μm on the silicon wafer of the fil...

Embodiment 2

[0055] Example 2, preparing a flexible molybdenum disulfide phototransistor with a molybdenum disulfide film thickness of 1 nm.

[0056] Step 1, cleaning the silicon substrate.

[0057] will have a 200nm thick SiO 2 The p-type heavily doped silicon wafers were ultrasonically cleaned in acetone and isopropanol for 15 minutes to remove surface pollutants, and dried with a nitrogen gun after cleaning.

[0058] Step 2: Prepare MoS on the cleaned substrate 2 film.

[0059] First use scotch tape to cover the 1nm thick MoS 2 Thin films from MoS 2 The solid was peeled off; then the sticky MoS 2 The tape of the film is tightly attached to the silicon substrate that has been cleaned in step 1; then the scotch tape is torn off to make the MoS 2 A thin film remains on the silicon wafer.

[0060] Step 3: In MoS 2 Electrode patterns are prepared on the film.

[0061] First, with MoS 2 Spin-coat MICROPOSIT S1811 photoresist with a thickness of 3 μm on the silicon wafer of the film,...

Embodiment 3

[0072] Example 3, preparing a flexible molybdenum disulfide phototransistor with a molybdenum disulfide film thickness of 6 nm.

[0073] Step A, cleaning the silicon substrate.

[0074] Will be with 300nm thick SiO 2 The p-type heavily doped silicon wafers were ultrasonically cleaned in acetone and isopropanol for 15 minutes to remove surface pollutants, and dried with a nitrogen gun after cleaning.

[0075] Step B: Preparation of MoS on the cleaned substrate 2 film.

[0076] B1) Use scotch tape to cover the 6nm thick MoS 2 Thin films from MoS 2 peel off on solid;

[0077] B2) will stick MoS 2 The adhesive tape of the film is tightly attached to the silicon substrate that has been cleaned in step A, and then the scotch tape is torn off to make the MoS 2 A thin film remains on the silicon wafer.

[0078] Step C: In MoS 2 Electrode patterns are prepared on the film.

[0079] C1) with MoS 2 Spin-coat MICROPOSIT S1811 photoresist with a thickness of 5 μm on the silicon ...

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Abstract

The invention discloses a flexible molybdenum disulfide phototransistor and a preparation method thereof, and mainly solves the problem that an existing flexible transistor is high in fabrication technique difficulty and poor in performance. The phototransistor structurally comprises a grid electrode (1), a dielectric layer (2) and a semiconductor layer (3) from bottom to top, a source electrode (4) and a drain electrode (5) are arranged at two ends of the semiconductor layer (3) and connected with the dielectric layer (2), flexible transparent materials such as PEN (polyethylene naphthalate)of an ITO (indium tin oxide) transparent electrode layer are evaporated on the surface of the grid electrode (1), and 5%-15% potassium hydroxide water solution is doped in the semiconductor layer (3).A device is transferred to a PEN substrate from a silicon substrate by the aid of a substrate transfer technology, molybdenum disulfide materials are doped in the substrate transfer process to reducethe contact resistance of the materials, fabrication technique is simplified, cost is reduced, the performance and the flexibility of the device are improved, and the phototransistor can be used forelectronic, communication and medical equipment.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, in particular to a molybdenum disulfide phototransistor, which is used in electronic, communication and medical equipment. Background technique [0002] A phototransistor is a photodetector, a device that converts optical signals into electrical signals. It is widely used in electronics, communications, military and medical fields. As a field effect transistor, a phototransistor works by using a channel material The photoconductive effect of the sensor detects the incident light, and the transport characteristics of the channel carriers can be adjusted by applying a gate voltage on the bottom gate. [0003] The strong photoluminescence phenomenon makes monolayer or multilayer MoS 2 Materials have great application prospects in the fields of photoexciters, photodetectors, and photocatalysis, and with the development of MoS 2 The reduction of the number of layers, which can change f...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/113H01L31/032H01L31/0392H01L31/0224H01L31/18
CPCH01L31/022408H01L31/032H01L31/03926H01L31/1136H01L31/1896Y02P70/50
Inventor 林珍华常晶晶张冰娟苏杰郝跃
Owner XIDIAN UNIV
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