Amorphous silicon flat panel detector

Abstract

The invention discloses an amorphous silicon flat panel detector, comprising a photosensitive layer, wherein the photosensitive layer is composed of a photodiode circuit made of amorphous silicon; a photosensitive surface is formed on the surface of the photosensitive layer; the photosensitive surface is in the shape of a rectangle, and the length of each side of the rectangle is no less than 4 cm; the photosensitive surface is covered with a transparent film for closely bonding with a self-luminous object; the self-luminous object is a film used in Western blot or Southern blot detection; thefilm contains to-be-detected protein or nucleic acid; the protein or nucleic acid binds to a specific antibody or nucleic acid; the specific antibody or nucleic acid is cross-linked with horseradishperoxidase; in virtue of catalysis by hydrogen peroxide, the chemiluminescent substrate of the horseradish peroxidase is allowed to give out fluorescent light; and the fluorescent light can penetratethe transparent film and is then captured by the photosensitive layer to form an image. The amorphous silicon flat panel detector of the invention can meet requirements on sensitivity and resolution and has size advantages and obvious cost advantages during large-format application.

Description

technical field [0001] The invention relates to a photosensitive chip which can be applied in Western blot or Southern blot technology, in particular to an amorphous silicon flat panel detector. Background technique [0002] The amorphous silicon flat panel detector is an indirect digital X-ray imaging. Its basic structure is that the surface is a layer of scintillator material (cesium iodide or sulfur oxide), and the next layer is a photodiode circuit made of amorphous silicon. The bottom layer is the charge readout circuit [1] . [0003] The scintillator located on the surface of the detector converts X-rays into visible light, and the amorphous silicon photodiode array under the scintillator converts visible light into electrical signals, forming stored charges on the capacitance of the photodiode itself, and the stored charge amount of each pixel It is proportional to the incident X-ray intensity. Under the action of the control circuit, the stored charge of each pixel...

AI Technical Summary

Problems solved by technology

There are the following disadvantages: 1. It takes up a lot of space: special darkrooms (rooms), sinks, and sewer pipes, etc. are required

2. High cost: Not only do you need to buy film processors and cassettes, but you also need a lot of consumables such as photosensitive film, developer, and fixer

Washing the film also causes waste of water resources

3. Pollution of the environment: developing film requires a lot of developer and fixer

4. Unstable image quality: In the darkroom, researchers cannot monitor the exposure level in real time, and often get a better image after several attempts

Time-consuming

5. Time-consuming: Nowadays, digitalization is widely used for data storage, transmission and publication. Therefore, film images have to be scanned and converted into digital images

6. Quantitative inaccuracy: Most of the time, the image that researchers judge to be better with the naked eye is actually oversaturated in grayscale

Disadvantage: loses the advantages of film acquisition, that is, the sensitivity is severely reduced

Disadvantages: Since the optical signal is collected by linear scanning, the entire image cannot be collected at the same time, so there is a time difference between scanning in different areas

However, in practical applications, the side length dimensions of NC films are often larger than 4 cm, which has exceeded the upper limit of commercial CCDs and CMOSs.

Dramatic increase in manufacturing costs due to larger CCD and CMOS sizes

Images