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A kind of g-c3n4 crystalline phase/amorphous homogeneous junction and its preparation method and application

A technology of C3N4 and g-c3n4, applied in the direction of chemical instruments and methods, non-metallic elements, chemical/physical processes, etc., can solve the problems of increased complexity and difficulty, difficult growth control, complicated preparation process, etc., to reduce the preparation energy Consumption, low price, and simple synthesis process

Active Publication Date: 2022-03-29
UNIV OF JINAN
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In the document Chem Commun.2018, 54, 4720-4723, the crystalline phase-amorphous phase mixed calcination method is used to obtain the crystalline phase-amorphous homogeneous junction. The ratio used is strictly regulated, and the growth is difficult to control, which increases the complexity and difficulty of production, and it is difficult to obtain the ideal homogeneous structure efficiently.

Method used

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  • A kind of g-c3n4 crystalline phase/amorphous homogeneous junction and its preparation method and application
  • A kind of g-c3n4 crystalline phase/amorphous homogeneous junction and its preparation method and application
  • A kind of g-c3n4 crystalline phase/amorphous homogeneous junction and its preparation method and application

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Embodiment 1

[0033] 1.1 Heat 10 g of melamine to 600 °C at a heating rate of 2 °C / min and keep it warm for 2 hours to obtain a block carbon nitride precursor.

[0034] 1.2. Grind the bulk carbon nitride precursor in the above step 1.1 until it is powdered, take 2 g and disperse it in 5 ml deionized water, and process it ultrasonically for 1 h.

[0035] 1.3. Transfer the suspension in step 1.2 to a petri dish, and freeze-dry (i.e., vacuum freeze-dry) under the conditions of a vacuum degree of less than 20Pa and a freezing temperature of less than -20°C to obtain a light yellow powder.

[0036] 1.4. Heat the light yellow powder obtained in the above step 1.3 to 650°C at a heating rate of 60°C / min under the protection of argon gas, and then raise it to 700°C at a heating rate of 0.5°C / min and keep it warm for 2 hours. Afterwards, it is naturally cooled with the furnace to obtain the final carbon nitride product.

[0037] figure 1 with figure 2 It is the HRTEM diagram of the final product....

Embodiment 2

[0040] According to the method for embodiment 1, prepare crystalline phase / amorphous homogeneous junction carbon nitride (also referred to as C 3 N 4 homogeneous junction, the same below), the difference is: replace melamine with dicyandiamide, and at the same time ensure that 2 g of block carbon nitride can be obtained. The resulting homojunction carbon nitride morphology and figure 2 Similarly, it is a crystalline phase and an amorphous homogeneous junction structure. The size of carbon nitride nanosheets is 300-500 nm and the thickness is 5-30 nm. Calculated crystal phase C 3 N 4 with amorphous phase C 3 N 4 The area ratio between them is 1:4.

Embodiment 3

[0042] Crystal phase / amorphous homogeneous junction carbon nitride was prepared according to the method of Example 1, except that melamine was replaced by urea, and at the same time, it was ensured that 2 g of block carbon nitride could be obtained. The resulting homojunction carbon nitride morphology and figure 2 Similarly, it is a crystalline phase and an amorphous homogeneous junction structure. The size of carbon nitride nanosheets is 300-500 nm and the thickness is 5-30 nm. Calculated crystal phase C 3 N 4 with amorphous phase C 3 N 4 The area ratio between them is 1:4.

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Abstract

The invention discloses a g-C 3 N 4 Crystal phase / amorphous homogeneous junction and its preparation method and application, this homojunction refers to the same graphite phase C 3 N 4 The upper crystalline phase and the amorphous phase are distributed alternately to form a homogeneous junction. The preparation method is as follows: the nitrogen-containing organic precursor is subjected to thermal condensation polymerization for the first time, and the obtained blocky graphite phase carbon nitride is ground into powder, ultrasonically thinned and dispersed, The powder is obtained, and the powder is subjected to thermal polycondensation for the second time to obtain the product. The invention is simple and easy to implement, low in price and good in repeatability, and has great enlightening significance for the synthesis of layered graphene-like semiconductor materials. The ratio of the crystalline phase and the amorphous phase of the homojunction obtained in the present invention can be adjusted, and compared with the traditional morphology, it has higher catalytic activity, which is beneficial to the efficient separation of electron-hole pairs and improves the reactivity; compared with the seed growth method The prepared homojunction is simpler than its synthesis process. In terms of visible light photocatalytic degradation, its relatively excellent photocatalytic properties are beyond the reach of ordinary sheet carbon nitride.

Description

technical field [0001] The present invention relates to a g-C 3 N 4 Homojunction and preparation method thereof, in particular to a flake graphite phase C 3 N 4 Crystal phase / amorphous homojunction and preparation method thereof, also related to the flake graphite phase C 3 N 4 The application of crystalline phase / amorphous homojunction as a visible light photocatalytic degradation catalyst belongs to the technical field of semiconductor materials. Background technique [0002] As an organic semiconductor, carbon nitride is an excellent photocatalyst due to its relatively suitable band gap structure (~2.7eV). In recent years, people have continuously modified it, including ion doping, heterojunction, and changing morphology. Comparing a series of literatures, it can be found that carbon nitride materials with heterojunction structures have the most excellent visible light photocatalytic degradation properties, mainly because the existence of heterojunctions is conduciv...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B21/082B01J27/24B82Y40/00
CPCB82Y40/00C01B21/0605B01J27/24C01P2004/64C01P2004/62C01P2004/24B01J35/39
Inventor 杨萍宋玉祥
Owner UNIV OF JINAN
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