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A 3D printing positive photoresist for high-resolution and high-transmittance semiconductors

A technology of positive photoresist and high light transmittance, applied in optics, optomechanical equipment, instruments, etc., can solve the problems of 3D printing photoresist and lack of production capacity of 193nm photoresist, etc. Achieve the effect of low production cost, small safety risk factor and simple production process

Active Publication Date: 2021-11-30
ZHONGSHAN POLYTECHNIC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, my country does not have the production capacity of 193nm photoresist at all, and the production of 3D printing photoresist is even more out of the question.

Method used

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  • A 3D printing positive photoresist for high-resolution and high-transmittance semiconductors

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Preparation of 3D printing positive photoresist for high-resolution and high-transmittance semiconductors, the steps are as follows:

[0043] a. Add 0.1 part of Ce(NO 3 ) 3 Add 30 parts of tetraisopropyl titanate to 1000 parts of pure water and stir for 10 minutes, then add 20 parts of magnesium chloride and 1 part of lithium chloride, raise the temperature to 60°C and keep it warm for 10 minutes, then add 1000 parts of methyl methacrylate And fully stir evenly, then raise the temperature to 120°C and keep it warm for 30 minutes; then stop the reaction and cool down the material, wait for the reaction solution to stand until it is clearly separated, then discard the lower aqueous phase, keep the upper organic phase, and add to the organic phase 1000 parts of saturated saline and fully stirred, then left to stand until obvious separation, then discarded the lower aqueous phase, and retained the upper organic phase, that is, magnesium lithium titanate modified methyl met...

Embodiment 2

[0047] Preparation of 3D printing positive photoresist for high-resolution and high-transmittance semiconductors, the steps are as follows:

[0048] a. Add 0.2 parts of Ce 2 (SO 4 ) 3 , 0.3 parts Dy(NO 3 ) 3 , 40 parts of tetrabutyl orthotitanate, 20 parts of trihydroxyacyl isopropyl titanate were added to 1000 parts of pure water and stirred for 30 minutes, then 30 parts of magnesium sulfate, 20 parts of magnesium nitrate, 2.5 parts of lithium sulfate, 2.5 parts of Lithium nitrate, and heat up to 80°C and keep it warm for 30 minutes; then add 2000 parts of ethyl methacrylate and 1000 parts of butyl methacrylate and stir well, then heat up to 150°C and keep it warm for 60 minutes; then stop the reaction and cool down Discharging, wait for the reaction liquid to stand until it is clearly separated, then discard the lower aqueous phase, keep the upper organic phase, add 1000 parts of saturated saline to the organic phase and stir well, then let it stand until it is clearly s...

Embodiment 3

[0052] Preparation of 3D printing positive photoresist for high-resolution and high-transmittance semiconductors, the steps are as follows:

[0053] a. Add 0.1 part of CeCl 3 , 0.1 Dy 2 (SO 4 ) 3 , 0.1 parts of DyCl 3 , 10 parts of isopropyl tristearyl titanate, 20 parts of dihydroxyacyl ethylene diethylene titanate, and 10 parts of tetraisopropyl titanate were added to 1000 parts of pure water and stirred for 15 minutes, then 10 parts of magnesium chloride were added , 10 parts of magnesium sulfate, 10 parts of magnesium nitrate, 0.5 parts of lithium nitrate, 1.5 parts of lithium hydroxide, 0.5 parts of lithium carbonate, and the temperature was raised to 65 ° C and kept for 15 minutes, and then added 500 parts of glycidyl methacrylate, 500 parts 2-Ethylhexyl methacrylate, 500 parts of methoxypolyethylene glycol (350) monomethacrylate and stir well, then raise the temperature to 130°C and keep it warm for 40 minutes, then stop the reaction and cool down to discharge , wh...

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Abstract

The invention discloses a 3D printing positive photoresist for high-resolution and high-transmittance semiconductors, which is prepared by the following method: using rare earth materials, titanium sources, soluble magnesium salts, soluble lithium salts, methacrylate mono Magnesium lithium titanate modified methacrylate monomer is obtained by high temperature hydrothermal reaction; then it is involved in free radical polymerization reaction to synthesize the magnesium lithium titanate colloidal particles as the "anchor point" Highly branched modified acrylic resin; after that, the modified acrylic resin, acid generator, additives, etc. are fully dispersed and homogeneous, and the finished photoresist with good fluidity, high degree of polymerization, and excellent etch resistance is obtained. The photoresist belongs to the chemical amplification category. It has strong photosensitivity under 193nm deep ultraviolet light source, good sensitivity, and a resolution of 0.09-0.11 μm.

Description

【Technical field】 [0001] The invention relates to a 3D printing positive photoresist for high-resolution and high-transmittance semiconductors, belonging to the technical field of photoresist preparation for semiconductors. 【Background technique】 [0002] Photoresist (also known as "photoresist"; photoresist) is the key basic core material required for the photolithography process of manufacturing VLSI (also known as "semiconductor" and "chip"), which directly restricts With the development of microelectronics technology. Photoresists are divided into positive and negative photoresists according to the removal or retention of exposed areas during development. (1) Positive photoresist: The photoresist in the exposed area undergoes a photochemical reaction, softens and dissolves in the developer, while the unexposed area remains on the substrate, and the same pattern as on the mask is copied to the substrate. on the bottom. (2) Negative photoresist: The photoresist in the e...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/039
Inventor 聂建华王俊李吉昌李金盛江常胜余明君
Owner ZHONGSHAN POLYTECHNIC
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