A method for regulating the growth of boron nitride crystals in boron-carbon-nitrogen thin films
A technology of crystal growth and boron-carbon-nitrogen, which is applied in crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of long experimental period, large growth environment influence, and limited parameter control range, so as to improve crystallinity and promote The effect of growth
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[0027] The present invention provides a substrate having diamond seeds distributed therein. In the present invention, the particle size of the diamond seed crystal is preferably 10-50 nm, more preferably 20-40 nm; the present invention has no requirement on the thickness of the diamond crystal seed layer, as long as the diamond crystal seeds are evenly dispersed on the substrate. In the present invention, the preparation method of the substrate distributed with diamond seed crystals preferably includes: polishing the substrate with sandpaper containing diamond seed crystals, dispersing the diamond seed crystals after etching on the substrate, or pressing the diamond seed crystals on the substrate.
[0028] The invention uses diamond seed crystals to assist the growth of boron nitride crystals in the traditional magnetron sputtering process. In the present invention, the smaller the grain size of the diamond seed crystal is, the better the compactness, uniformity and continuity...
Embodiment 1
[0045] Growth of boron carbon nitride films on silicon substrates pretreated with diamond seeds:
[0046](1) After the silicon (100) single wafer cut according to the required size is ultrasonically cleaned in acetone, ethanol, and deionized water in sequence, it is dried with nitrogen and polished on sandpaper with diamond seed crystals, and then sent to vacuum deposition chamber, and the vacuum degree in the deposition chamber was pumped to 3×10 -5 Pa, heat the substrate to 500°C;
[0047] (2) Continue vacuuming until the back vacuum of the deposition chamber reaches 3×10 -5 Pa, the reaction working gas argon is introduced until the working pressure is 2Pa;
[0048] (3) The distance between the substrate and the target is 8cm, add a negative bias voltage of -100V to the substrate, set the sputtering power of the target to 150W and start glowing. After 2 minutes of pre-sputtering, the baffle is removed for thin film sputtering, and the thin film sputtering time for 2h.
Embodiment 2
[0061] Growth of boron carbon nitride films on silicon substrates pretreated with diamond seeds:
[0062] (1) After the silicon (100) single wafer cut according to the required size is ultrasonically cleaned in acetone, ethanol, and deionized water in sequence, it is dried with nitrogen and polished on sandpaper with diamond seed crystals, and then sent to vacuum deposition chamber, and the vacuum degree in the deposition chamber was pumped to 3×10 -5 Pa, heat the substrate to 500°C;
[0063] (2) Continue vacuuming until the back vacuum of the deposition chamber reaches 3×10 -5 Pa, the reaction working gas argon is introduced until the working pressure is 2Pa;
[0064] (3) The distance between the substrate and the target is 6cm, and the negative bias of the substrate is -100V, and the target sputtering power is set to 150W to start glowing. After 2 minutes of pre-sputtering, the baffle is removed for thin film sputtering, and the thin film sputtering time for 2h.
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