Plasmon-photonic mode-based coupled narrow-band photoelectric detector

Abstract

The invention discloses a plasmon-photonic mode-based coupled narrow-band photoelectric detector. The detector structurally comprises a bottom electrode 1, a semiconductor layer 2 and an insulating dielectric layer 3 from the bottom up in sequence, wherein a plasmon metal nano structure 4 is modified on the upper surface of the insulating dielectric layer 3; a top electrode 5 is arranged on the periphery of the insulating dielectric layer 3; and the top electrode 5 is in direct contact with the semiconductor layer 2. The plasmon resonance mode supported by the plasmon metal nano structure 4 and the optical waveguide mode supported by the insulating dielectric layer 3-semiconductor layer 2 are subjected to coupling resonance to form narrow-band perfect super absorption, so that narrow-bandphotoelectric detection is achieved. The photoelectric detector can regulate and control the narrow-band response wave band and integrate detector units with different working wavebands, so that a wide-waveband working hyper-spectral imager or an image sensor is formed; and the photoelectric detector has the advantages of being miniaturized and integrated, and has a high application prospect in the field of optoelectronic devices and optical communication.

Description

technical field [0001] The invention relates to a narrow-band photodetector based on plasmon-photon mode coupling, which belongs to the field of photodetectors. technical background [0002] As a device that converts optical signals into electrical signals, photodetectors have been used in many fields. The traditional internal photoelectric effect photodetection device is based on the semiconductor energy band theory, as long as the incident photon energy is greater than the forbidden band width of the semiconductor material, it can excite valence band electrons to the conduction band, form photoinduced carriers, generate photocurrent, and realize photodetection. However, most of the photodetectors based on this principle have a wide-band response, which cannot achieve fine resolution of the spectrum, and once the semiconductor material is determined, the adjustment of the response spectrum cannot be realized. At present, the main method to achieve fine spectral resolution ...

AI Technical Summary

Problems solved by technology

The traditional internal photoelectric effect photodetection device is based on the semiconductor energy band theory, as long as the incident photon energy is greater than the forbidden band width of the semiconductor material, it can excite valence band electrons to the conduction band, form photoinduced carriers, generate photocurrent, and realize photodetection. However, most photodetectors based on this principle have a wide-band response, which cannot achieve fine resolution of the spectrum, and once the semiconductor material is determined, the response spectrum cannot be adjusted.

At present, the main method to achieve fine spectral resolution and detection is to use an optical system to achieve spectral separation first, and then combine the detector to achieve spectral resolution detection. The optical system used is mainly composed of filtering structures such as gratings. Spectral detection, but the whole system is complex and bulky, and it is not easy to chip and integrate. Therefore, it is urgent to design a new narrow-band photodetection device based on a new structure or a new principle that can achieve spectral resolution.

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