Check patentability & draft patents in minutes with Patsnap Eureka AI!

a zno modifies wo 3 /bivo 4 Preparation method of heterojunction and its application in photoelectrocatalysis

A heterojunction and recombination light technology, applied in metal/metal oxide/metal hydroxide catalysts, physical/chemical process catalysts, chemical instruments and methods, etc., can solve the problem of short lifetime of photogenerated carriers and weak visible light response , low photon absorption coefficient, etc., to achieve the effect of improving photocatalytic performance, precise and controllable deposition thickness, and simple and controllable process

Active Publication Date: 2020-06-23
NINGBO UNIVERSITY OF TECHNOLOGY
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, WO 3 Has relatively weak visible light response (<460nm), low absorption coefficient for photons
BiVO 4 The short lifetime and easy recombination of photogenerated carriers limit their application in the field of photoelectrocatalysis.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • a zno modifies wo <sub>3</sub> /bivo <sub>4</sub> Preparation method of heterojunction and its application in photoelectrocatalysis
  • a zno modifies wo <sub>3</sub> /bivo <sub>4</sub> Preparation method of heterojunction and its application in photoelectrocatalysis
  • a zno modifies wo <sub>3</sub> /bivo <sub>4</sub> Preparation method of heterojunction and its application in photoelectrocatalysis

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] Weigh 0.1g PVP and 2g WCl respectively 6 Dissolve in 10 mL of DMF and stir at room temperature for 1 h to obtain a spin-coating solution. Spin-coat 20 μL on the conductive surface of FTO glass at a speed of 4000 rpm, dry at 80 °C for 3 h, and anneal at 500 °C for 1 h in a muffle furnace to form WO 3 seed layer. figure 1 For the obtained WO 3 The scanning electron microscope (SEM) picture of the seed crystal layer can be seen to be composed of very small WO 3 The particles are composed and densely covered on the FTO conductive surface.

[0047] 0.25g Na 2 WO 4 Dissolve in 30mL of water, add 6mL of 3M HCl, stir well, then add 0.2g (NH 4 ) 2 C 2 o 4 , add water to 70 mL and stir until a clear solution forms. Take 28mL of the above-prepared solution, add and place WO 3 In the FTO reactor of the seed layer, react at 120°C for 12h. After the reaction was completed and cooled, the surface of the electrode was cleaned with deionized water and ethanol, and then annea...

Embodiment 2

[0052] The only difference from Example 1 is that the deposition cycle of the ZnO layer is 30 times, and other processes are the same as those in Example 1, which will not be repeated here. The cross-sectional scanning electron microscope (SEM) of the prepared photocatalytic anode material is as follows: Figure 10 As shown, there is no obvious change in the surface morphology, indicating that the ZnO layer is extremely thin.

Embodiment 3

[0054] The only difference from Example 1 is that the deposition cycle of the ZnO layer is 100 times, and other processes are the same as in Example 1, which will not be repeated here. The cross-sectional scanning electron microscope (SEM) of the prepared photocatalytic anode material is as follows: Figure 11 As shown, the surface morphology did not change significantly.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a preparation method of a ZnO modified WO3 / BiVO4 heterojunction and belongs to the technical field of material preparation. The preparation method of the ZnO modified WO3 / BiVO4 heterojunction comprises the following steps: preparing a WO3 seed crystal layer from WCl6 and PVP; dissolving sodium tungstate into water and adding hydrochloric acid and ammonium oxalate sequentially to obtain a transparent solution; adding the transparent solution into the WO3 seed crystal layer, performing reaction to obtain a WO3 array precursor and performing high-temperature annealing toobtain a WO3 electrode; dissolving bi(acetylacetone)vanadium oxide and bismuth nitrate pentahydrate into glacial acetic acid, and adding ethyl cellulose to obtain a BiVO4 precursor solution; dispensing the surface of the WO3 electrode with the BiVO4 precursor solution, drying and annealing to obtain a WO3 / BiVO4 composite photo-anode; and placing the WO3 / BiVO4 composite photo-anode in an atomic layer deposition system, performing sedimentary cycle on diethyl zinc and water and allowing ZnO to grow layer by layer to obtain the ZnO modified WO3 / BiVO4 heterojunction with relatively high efficiencyand stability in photoelectrocatalysis.

Description

technical field [0001] The invention relates to a ZnO modified WO 3 / BiVO 4 Preparation method of heterojunction and prepared ZnO modified WO 3 / BiVO 4 The application of heterojunction in photoelectric catalysis belongs to the technical field of material preparation. Background technique [0002] Energy is the basis of human survival and development. With the rapid development of economy, the consumption of fossil energy continues to increase, and human beings are facing increasingly serious problems of energy shortage and environmental damage. Based on this, the development of clean energy is of great significance to ensure energy security, promote environmental protection, reduce greenhouse gas emissions, and achieve sustainable development of the national economy. Hydrogen energy is considered as an ideal energy carrier because of its cleanness, renewable, extensive resources, and high energy density. Semiconductor materials, which can convert solar energy into chem...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C25B11/06C25B1/04B01J23/31C23C16/40C23C16/455
CPCY02E60/36
Inventor 侯慧林马自在杨为佑
Owner NINGBO UNIVERSITY OF TECHNOLOGY
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com