A method for preparing single-layer tungsten diselenide nanobelts based on spatial confinement strategy

Abstract

The invention discloses a method for preparing a single-layer tungsten diselenide nanoribbon based on a space confinement strategy. The present invention can realize the effective control of the width and thickness of the nanoribbon by changing the flow rate and growth time of hydrogen gas, including the following steps: evenly sprinkle tungsten trioxide powder on a substrate, and then cover it with another substrate to form a nanoribbon A miniature reaction space with a "sandwich" structure. The growth of tungsten diselenide nanoribbons is carried out by atmospheric pressure chemical vapor deposition; the physicochemical properties of one-dimensional transition metal chalcogenides are strongly dependent on the type of dangling bonds at their edges, and the ultra-narrow bands show metallic properties, while the wider bands From its edge to the center, it shows the transformation of metallic properties to semiconductor properties; this special property makes tungsten diselenide nanobelts widely used in micro-nano optoelectronic devices; and according to the experimental method of the present invention, diselenization can be realized Industrial production of tungsten nanoribbons.

Description

technical field [0001] The invention relates to materials and microelectronic technology, in particular to a method for preparing single-layer tungsten diselenide nanobelts based on a space confinement strategy. Background technique [0002] One-dimensional nanostructures, such as nanorods, nanowires, and nanobelts, have been widely studied in the past two decades. Due to the quantum confinement effect, one-dimensional nanostructures have special electronic band structures and exhibit peculiar It has important basic research value and scientific significance. In recent years, researchers have successfully synthesized atomically thick graphene nanoribbons, and found that graphene nanoribbons with a width of less than 10 nanometers exhibit semiconductor properties, and field effect transistors prepared with them have an on-off ratio of 10. 7 . This novel one-dimensional carbon nanomaterial has broad application prospects in future nanoscale electronic devices. [0003] The ...

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Problems solved by technology

The currently reported methods for preparing nanoribbon materials are mainly template method and solvent method. Although these two methods can obtain narrower nanoribbons, the preparation method is complicated in operation and high in preparation cost, and cannot be applied industrially.

The use of ordinary chemical vapor deposition usually requires the addition of salt to prepare tungsten diselenide nanoribbons, but this method will inevitably introduce impurities into the material due to the use of salt, thereby reducing the quality of the sample, which will eventually affect the subsequent device preparation process and Device performance

[0005] Chinese invention CN201810078755 provides a method for preparing a large-area single-layer tungsten diselenide single crystal, which reports the use of CVD method to WO 3 Preparation of monolayer WSe as precursor 2 The method of nanosheets, which is representative of two-dimensional materials, uses only argon as the carrier gas in the process, and adds NaCl solution to the growth substrate for pretreatment with a pipette gun, but this method can only monolayer WSe 2 Triangular nanosheets cannot obtain one-dimensional nanomaterials, which limits the device application of the material. At the same time, the addition of NaCl salt will inevitably introduce impurity ions and affect the purity of the product, and the salt product that appears on the growth substrate after adding salt Will affect the subsequent device preparation process and device performance

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