Composite film for wafer grinding and preparation method of film

A composite film and wafer technology, applied in the direction of grinding devices, grinding machine tools, film/sheet adhesives, etc., can solve the problems of thermal shrinkage of protective film, warping of silicon wafers, etc., to achieve strong adhesion, Warpage prevention and good thermal stability

Inactive Publication Date: 2019-05-31
SHANGHAI HIUV NEW MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This adhesive protective film is attached to the silicon wafer. When the silicon wafer is ground, it will generate high temperature, which will cause thermal shrinkage of the protective film and its adhesive layer, and cause the silicon wafer to warp with the shrinkage of the film.

Method used

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  • Composite film for wafer grinding and preparation method of film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] The film raw material is by weight, polyethylene (PE) resin weight 70 parts, antioxidant 1010 weight 0.1 part, antioxidant 168 weight 0.2 part, ultraviolet absorber 774 weight 1 part, dioctyl phthalate ( 30 parts by weight of DOP) and 2 parts by weight of trimethylolpropane triacrylate (TMPTA) were uniformly mixed in a high-speed mixer, and then granulated at an extrusion temperature of 190°C; polyethylene terephthalate - 100 parts by weight of 1,4-cyclohexanedimethanol ester (PETG) resin, 0.1 part by weight of antioxidant 1010, and 1 part by weight of ultraviolet absorber 774 parts in a high-speed mixer. Lower granulation; 40 parts by weight of ethylene-vinyl acetate (EVA) resin and 0.1 part by weight of 1010 antioxidants were mixed uniformly in a high-speed mixer.

[0033] Then put PE pellets, ethylene-methyl acrylate copolymer (EMA), PETG pellets, EMA, ethylene-vinyl acetate (EVA) / antioxidant 1010 blend into the multi-layer co-extrusion extruder , cast at 200°C thro...

Embodiment 2

[0037] The film raw material is by weight, polyethylene (PE) resin weight 50 parts, antioxidant 1010 weight 0.1 part, antioxidant 168 weight 0.2 part, ultraviolet absorber 774 weight 1 part, dioctyl phthalate ( 30 parts by weight of DOP) and 2 parts by weight of trimethylolpropane triacrylate (TMPTA) were uniformly mixed in a high-speed mixer, and then granulated at an extrusion temperature of 190°C; polyethylene terephthalate - 80 parts by weight of 1,4-cyclohexanedimethanol ester (PETG) resin, 0.1 part by weight of antioxidant 1010, and 1 part by weight of ultraviolet absorber 774 parts by weight in a high-speed mixer. Lower granulation; 30 parts by weight of ethylene-vinyl acetate (EVA) resin and 0.1 part by weight of 1010 antioxidants were mixed uniformly in a high-speed mixer.

[0038] Then put PE pellets, ethylene-methyl acrylate copolymer (EMA), PETG pellets, EMA, ethylene-vinyl acetate (EVA) / antioxidant 1010 blend into the multi-layer co-extrusion extruder , cast at 2...

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Abstract

The invention relates to a composite film for wafer grinding. The film comprises a base material layer and an adhesive layer, wherein the base material layer sequentially comprises a polyethylene layer, an ethylene-methyl acrylate copolymer layer, a polyethylene terephthalate-1,4-cyclohexanedimethanol ester layer, an ethylene-methyl acrylate copolymer layer and an ethylene-vinyl acetate layer; theadhesive layer is coated on the polyethylene layer; and the base material layer is irradiated and crosslinked by electronic irradiation equipment after coextrusion and casting into a film. The invention further provides a preparation method of the composite film for wafer grinding. By adopting the composite film for wafer grinding and the preparation method of the film, the base material layer isa transparent or white fog plastic film, and thus the process flow is greatly shortened, and the production cost is reduced; and a base material has better thermal stability and better dimensional stability after the silicon wafer grinding process, so that the shrinkage generated by the adhesive layer after high temperature does not affect the size of the base material, and the silicon wafer warping is prevented at the same time.

Description

technical field [0001] The present invention relates to the technical field of protective films, in particular to the technical field of multilayer composite films, in particular to a multilayer composite film for wafer grinding and a preparation method thereof. Background technique [0002] In the manufacturing process of semiconductor devices, protective films are required for grinding and thinning of semiconductor silicon wafers. This adhesive protective film is attached to the silicon wafer. When the silicon wafer is ground, it will generate high temperature, which will cause thermal shrinkage of the protective film and its adhesive layer, and cause the silicon wafer to warp with the shrinkage of the film. . The adhesive protective film of the present invention needs to have higher cleanliness and extremely low ion impurity content, and has excellent dimensional stability, moderate adhesion, thermal stability, so that it can be well combined with The silicon wafer is p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09J7/29C09J7/38B24B37/34
Inventor 周亮吉范珩
Owner SHANGHAI HIUV NEW MATERIALS
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