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Cavity injection material, preparation method thereof and QLED device

A technology of hole injection material and hole injection layer, which is applied in the field of quantum dots, can solve problems such as the inability to form high-quality p-type ZnO, and achieve the effects of promoting effective recombination, improving injection ability, and improving luminous performance

Active Publication Date: 2019-06-25
TCL CORPORATION
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to overcome the above-mentioned deficiencies of the prior art, to provide a hole injection material and its preparation method and QLED device, aiming to solve the technical problem that the prior art cannot form high-quality p-type ZnO

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  • Cavity injection material, preparation method thereof and QLED device

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preparation example Construction

[0025] Correspondingly, a method for preparing a hole injection material includes the following steps:

[0026] S01: Provide zinc salt and phosphate;

[0027] S02: dissolving the zinc salt and phosphate in an organic solvent, and performing a first heat treatment under a first alkaline condition to obtain a phosphorus-doped zinc oxide crystal solution;

[0028] S03: provide a fatty acid, add the fatty acid to the phosphorus-doped zinc oxide crystal solution, and perform a second heat treatment under a second alkaline condition to obtain a precursor solution;

[0029] S04: placing the precursor solution on the substrate, and performing annealing treatment to obtain the hole injection material.

[0030] In the preparation method of the hole injection material in the embodiment of the present invention, a fatty acid modified phosphorus-doped ZnO nanomaterial (P-ZnO) is prepared as the hole injection layer material by a simple sol-gel method. The preparation method adjusts by in...

Embodiment 1

[0059] Taking zinc chloride, sodium dihydrogen phosphate, methanol, sodium hydroxide, and oleic acid as examples, the preparation method of the hole injection material in this embodiment is described in detail.

[0060] 1) Add appropriate amount of zinc chloride and sodium dihydrogen phosphate to 50ml of methanol to form a solution with a total concentration of 0.2M-1M; wherein the molar ratio of zinc:phosphorus is 1:(0.1%-10%). Then stir and dissolve at 60°C, add dropwise sodium hydroxide dissolved in 10ml methanol lye; wherein, sodium hydroxide: Zn 2+ Molar ratio=(1.8-2.5):1. Continue to stir at 60°C for 2h-4h to obtain a homogeneous transparent solution.

[0061] 2) Slowly drip 10ml methanol solution of oleic acid; wherein, oleic acid: Zn 2+ Molar ratio=(2-3):1, pH=8-9, continue heat treatment at 60° C. for 1h-2h to form a precursor solution.

[0062] 3) After the precursor solution is cooled, spin-coat the treated ITO with a coater, and anneal at 300°C-350°C.

Embodiment 2

[0064] Taking zinc nitrate, ammonium orthophosphate, ethylene glycol methyl ether, ammonia water, and lauric acid as examples, the preparation method of the hole injection material in this embodiment is described in detail.

[0065] 1) Add appropriate amount of zinc nitrate and ammonium orthophosphate to 50ml of ethylene glycol methyl ether to form a solution with a total concentration of 0.2M-1M; wherein, the molar ratio of zinc:phosphorus is 1:(0.1%-10%). Then stirred and dissolved at 60°C, and added dropwise ammonia water dissolved in 10ml ethylene glycol methyl ether lye; wherein, ammonia water: Zn 2+ Molar ratio=(1.8-2.5):1. Continue to stir at 60°C for 2h-4h to obtain a homogeneous transparent solution.

[0066] 2) slowly drop 10ml ethylene glycol methyl ether solution of lauric acid; wherein, lauric acid: Zn 2+ Mole:=(2-3):1, pH=8-9, continue heat preservation treatment at 60°C for 1h-2h to form a precursor solution.

[0067] 3) After the precursor solution is cooled...

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Abstract

The invention relates to a cavity injection material, a preparation method thereof and a QLED device, and belongs to the technical field of quantum dots. The cavity injection material comprises p typeZnO which is a phosphor doped ZnO nano-material and modified with aliphatic acid in the surface. The cavity injection material improves the acceptor energy level of the p type ZnO nano-material, andreduce the forbidden bandwidth of ZnO, a self-compensation effect is inhibited, the cavity injection capability is improved, effective electron-cavity combination is facilitated, influence of excitonaccumulation on the device performance is reduced, and thus, the light emitting performance of the QLED device is improved.

Description

technical field [0001] The invention belongs to the field of quantum dots, and in particular relates to a hole injection material, a preparation method thereof and a QLED device. Background technique [0002] ZnO is a direct bandgap n-type semiconductor material with a wide bandgap of 3.37eV and a low work function of 3.7eV. This band structure characteristic determines that ZnO can be a suitable electron transport layer material; at the same time, its good Electrical conductivity, high visible light transmittance, excellent water-oxygen stability, and mature preparation process make it more and more outstanding in the optoelectronic devices of solution process. [0003] The application of ZnO in the field of optoelectronics depends on the preparation of high-quality n-type and p-type thin films. At present, n-type ZnO with better electrical properties has been obtained by doping. However, intrinsic ZnO tends to generate various donor defects inside, and the self-compensat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54B82Y30/00B82Y40/00
Inventor 何斯纳吴龙佳吴劲衡
Owner TCL CORPORATION