Method for preparing DFN package device with high thermal conductivity

A packaging device, high thermal conductivity technology, applied in semiconductor/solid-state device manufacturing, semiconductor device, semiconductor/solid-state device components and other directions, can solve the problems of uneven curing, poor fluidity of epoxy resin composition, and reduced thermal performance, etc. Achieve the effect of improving the heat dissipation effect of the package, improving the heat dissipation effect, and improving the quality of the package

Active Publication Date: 2019-06-28
西安航思半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Due to the poor fluidity or uneven curing of the epoxy resin composition during the packaging process, it is easy to cause the internal gas to be completely driven away and produce pores, which will

Method used

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  • Method for preparing DFN package device with high thermal conductivity
  • Method for preparing DFN package device with high thermal conductivity
  • Method for preparing DFN package device with high thermal conductivity

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1~4

[0027] Embodiments 1 to 4: A preparation method of a high thermal conductivity DFN packaged device, the high thermal conductivity DFN packaged device includes a heat dissipation pad 1, a chip 3 and a conductive pad 4 located in an epoxy insulator 6, and the chip 3 is located in On the heat dissipation pad 1, several conductive pads 4 are arranged around the heat dissipation pad 1, and the conductive pads 4 and the chip 3 are connected by a lead 5;

[0028] The central area of ​​the heat dissipation pad 1 is provided with a sunken groove 11 for embedding the chip 3, thereby forming a cofferdam portion 12 at the edge area of ​​the heat dissipation pad 1, and the bottom of the sunken groove 11 and the cofferdam portion 12 are in contact with the chip. A silver paste layer 2 is provided between the lower surface and the side wall of the 3, and a number of heat exchange blind holes 13 extending into the heat dissipation pad 1 are opened at the bottom of the sinker 11, and in the hea...

Embodiment 1

[0040] The release agent in embodiment 1 is stearic acid, and flame retardant is borate; The release agent in embodiment 2 is stearate, and flame retardant is borate; The release agent in embodiment 3 The agent is oxidized polyethylene wax, and the flame retardant is molybdate; the release agent in Example 4 is a mixture of stearic acid and oxidized polyethylene wax, and the flame retardant is molybdate.

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PUM

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Abstract

The invention discloses a method for preparing a DFN package device with high thermal conductivity, comprising the following steps of: S1, uniformly mixing silicon micro-powders and a flame retardantwith 3-aminopropyltriethoxysilane for surface treatment; S2, adding epoxy resin, linear phenolic resin, liquid nitrile rubber, diethyl pyrocarbonate, polyethylene glycol monooctyl phenyl ether, cellulose acetate butyrate, 5-fluoro-2-meth-oxyaniline, 2,4,6-tris(dimethylaminomethyl)phenol and a release agent, and uniformly mixing the same; and S3, mixing the mixture at 90-110 degrees centigrade for3 to 5 minutes, cooling, pulverizing and sieving a product. The DFN package device with high thermal conductivity prepared by the method has a low incidence rate of internal pores, and avoids electrical property failure due to the deterioration of the thermal conductivity caused by the pores.

Description

technical field [0001] The invention belongs to the technical field of leadless packaging, and in particular relates to a preparation method of a high thermal conductivity DFN packaging device. Background technique [0002] DFN is a leadless package with a square or rectangular shape. There is a large-area exposed pad at the center of the bottom of the package for heat conduction, and there are conductive pads around the periphery of the package around the large pad for electrical connection. Because the DFN package does not have gull-wing leads like the traditional SOIC and TSOP packages, the conductive path between the internal pins and the pad is short, the self-inductance coefficient and the internal wiring resistance of the package are very low, so it can provide excellent electrical performance. And be widely used. [0003] Due to the poor fluidity or uneven curing of the epoxy resin composition during the packaging process, it is easy to cause the internal gas to be ...

Claims

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Application Information

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IPC IPC(8): H01L21/56H01L23/29H01L23/31H01L23/367C08L63/00C08L61/06C08L9/02C08L71/02C08L1/14C08L23/30C08K9/06C08K3/36C08K3/24C08K3/38C08K5/098H01B3/40C08G59/42C08G59/50
CPCH01L21/561H01L23/367H01L23/3121H01L2224/83385H01L2924/181H01L2224/73265H01L2224/48247H01L2224/32245H01L2924/00012H01L2924/00
Inventor 马磊党鹏杨光彭小虎王新刚庞朋涛任斌王妙妙
Owner 西安航思半导体有限公司
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