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Composite thin film, and preparation method and application thereof

A composite thin film and thin film technology, which is applied in the manufacture of semiconductor/solid-state devices, nanotechnology for materials and surface science, nanotechnology, etc., can solve the problems of poor energy level matching and high electron injection barriers, and achieve improved device performance. Performance, strong applicability and practicality, and the effect of improving luminous efficiency

Inactive Publication Date: 2019-07-09
TCL CORPORATION
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a composite thin film and its preparation method, aiming to solve the poor energy level matching relationship between the nano-zinc oxide electron transport layer and the cathode and quantum dot light-emitting layer in blue or green quantum dot light-emitting diodes, resulting in The problem of high barriers to electron injection

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  • Composite thin film, and preparation method and application thereof
  • Composite thin film, and preparation method and application thereof
  • Composite thin film, and preparation method and application thereof

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preparation example Construction

[0041] Correspondingly, an embodiment of the present invention provides a method for preparing a composite film, comprising the following steps:

[0042]S01. prepare the zinc oxide colloid solution containing doping metal ion of different doping concentration, wherein, the ionic radius of described doping metal ion is Zn 2+ 85%-115% of the radius; the conduction band energy level of the oxide doped with metal ions is higher than the conduction band energy level of zinc oxide;

[0043] S02. Provide a substrate, according to the order of the doping concentration of the doped metal ions from small to large or from large to small, sequentially deposit the zinc oxide colloidal solution containing doped metal ions on the substrate, and anneal processing, preparing an N-layer doped with metal ions whose doping concentration is increased or decreased layer by layer, and containing a nano-zinc oxide film doped with metal ions to obtain a composite film, wherein the value range of N sat...

Embodiment 1

[0101] A magnesium ion-doped nano-zinc oxide composite film, the preparation method of which comprises the following steps:

[0102] First, an appropriate amount of zinc acetate and magnesium nitrate is added to 50ml of methanol solvent to form a mixed salt solution with a total concentration of 0.1mol / L, wherein Mg 2+ The doping molar concentration is 1%. Simultaneously, an appropriate amount of potassium hydroxide powder is dissolved in another part of 50ml methanol solvent to form a concentration of lye that is 0.3mol / L. The mixed salt solution was then heated to 50 °C, and potassium hydroxide solution was added dropwise until the molar ratio of hydroxide ions to metal ions was 1.7:1. After the potassium hydroxide solution was dripped, the mixed solution was stirred at 50°C for 2 hours to obtain a uniform transparent solution. Subsequently, a heptane solvent with a volume ratio of 3:1 was added to the homogeneous transparent solution, resulting in a large amount of white ...

Embodiment 2

[0107] A magnesium ion-doped nano-zinc oxide composite film, the preparation method of which comprises the following steps:

[0108] First, an appropriate amount of zinc nitrate and magnesium acetate is added to 50ml ethanol solvent to form a mixed salt solution with a total concentration of 0.1mol / L, wherein Mg 2+ The doping molar concentration is 0%. Simultaneously, an appropriate amount of lithium hydroxide powder is dissolved in another part of 50ml ethanol solvent to form a concentration of lye that is 0.15mol / L. The mixed salt solution was then kept at room temperature, and lithium hydroxide solution was added dropwise until the molar ratio of hydroxide ions to metal ions was 1.8:1. After the potassium hydroxide solution was dripped, the mixed solution was stirred at room temperature for 1 h to obtain a uniform transparent solution. Subsequently, ethyl acetate solvent with a volume ratio of 4:1 was added to the homogeneous transparent solution, resulting in a large amo...

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Abstract

The invention provides a composite thin film. The composite thin film comprises N layers of thin films sequentially stacked and combined; the N layers of the thin films are nano-zinc oxide thin filmscontaining doped metal ions; and from the first layer of the thin film to the Nth layer of the thin film, the doping concentrations of the doped metal ions are increased layer by layer, wherein the radiuses of the doped metal ions are 85-115% of the radiuses of Zn<2+>; the conduction band energy level of oxides of the doped metal ions is higher than that of zinc oxide; and N is greater than or equal to 3 and less than or equal to 9.

Description

technical field [0001] The invention belongs to the field of display technology, and in particular relates to a composite film and its preparation method and application. Background technique [0002] Recently, with the continuous development of display technology, quantum dot light-emitting diodes (QLEDs) with quantum dot materials as the light-emitting layer have shown great application prospects. Due to its high luminous efficiency, controllable luminous color, high color purity, good device stability, and flexible applications, QLED has attracted more and more attention in the fields of display technology and solid-state lighting. [0003] In recent years, the nano-zinc oxide electron transport layer prepared by depositing zinc oxide colloidal solution has gradually become the main electron transport layer scheme used in quantum dot light-emitting diodes. On the one hand, the nano-zinc oxide electron transport layer has excellent electron transport ability, and its elec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H10K50/165H10K2102/00H10K71/00
Inventor 吴龙佳
Owner TCL CORPORATION
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