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Vertical GaN Schottky diode device and preparation method thereof

A Gallium Nitride Schottky, vertical technology, applied in the direction of diodes, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve the problems of large reverse leakage current, low reverse breakdown voltage, etc., to increase the reverse The effects of improving withstand voltage characteristics, high breakdown voltage, and improving breakdown capability

Inactive Publication Date: 2019-08-16
SHANGHAI TECH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0016] The technical problem to be solved by the present invention is: the reverse breakdown voltage of the Schottky diode is low and the reverse leakage current is too large

Method used

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  • Vertical GaN Schottky diode device and preparation method thereof
  • Vertical GaN Schottky diode device and preparation method thereof
  • Vertical GaN Schottky diode device and preparation method thereof

Examples

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Effect test

Embodiment 1

[0055] A preparation method of a gallium nitride Schottky diode device with a quasi-vertical heterostructure:

[0056] Step 1: Deposit a growth buffer layer on the surface of the substrate 6 as the buffer layer 5, and use metal-organic chemical vapor deposition on the buffer layer 5 to form N-type heavily doped layer 4 and N-type lightly doped layer in sequence 3;

[0057] Step 2: Depositing an AlGaN layer 2 on the N-type lightly doped layer 3;

[0058] Step 3: continue to deposit metallic nickel as the anode metal layer 1 by electron beam evaporation technology, and form a Schottky contact with the aluminum gallium nitride layer 2;

[0059] Step 4: Deposit the cathode metal layer 7 on the surface of the N-type heavily doped layer 4 using electron beam evaporation technology, and form an ohmic contact between the two to obtain a gallium nitride Schottky diode device with a quasi-vertical heterostructure, such as figure 1 shown.

Embodiment 2

[0061] A preparation method of a gallium nitride schottky diode device with a quasi-vertical heterostructure with a p-type gallium nitride guard ring:

[0062] Step 1: Deposit a growth buffer layer on the surface of the substrate 6 as the buffer layer 5, and use metal-organic chemical vapor deposition on the buffer layer 5 to form N-type heavily doped layer 4 and N-type lightly doped layer in sequence 3, such as figure 2 shown;

[0063] Step 2: Depositing an AlGaN layer 2 on the N-type lightly doped layer 3;

[0064] Step 3: Use electron beam evaporation technology to continue to deposit metallic nickel as the anode metal layer 1, and form a Schottky contact with the aluminum gallium nitride layer 2, such as image 3 shown;

[0065] Step 4: Remove the glue and re-prepare the mask, and prepare a P-type gallium nitride guard ring 8 in the N-type lightly doped layer 3 by using ion implantation technology (the aluminum gallium nitride layer 2 is surrounded by the P-type galliu...

Embodiment 3

[0068] A method for preparing a GaN Schottky diode device with an all-vertical heterostructure:

[0069] Step 1: Deposit a conductive buffer layer on the surface of the substrate 6 (using a conductive substrate) as the buffer layer 5, and use metal-organic chemical vapor deposition on the buffer layer 5 to sequentially form N-type heavily doped layers 4, N-type lightly doped layer 3;

[0070] Step 2: using a photoresist to prepare a mask, etching part of the N-type lightly doped layer 3, etching a groove in the N-type lightly doped layer 3, and depositing an AlGaN layer 2;

[0071] Step 3: On the basis of the original mask, continue to deposit metallic nickel as the anode metal layer 1 by electron beam evaporation technology, and form a Schottky contact with the AlGaN layer 2;

[0072] Step 4: Deposit the cathode metal layer 7 on the surface of the substrate 6 by using electron beam evaporation technology, and form an ohmic contact between the two to obtain a gallium nitride ...

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Abstract

The invention relates to a vertical GaN Schottky diode device and a preparation method thereof. The device comprises an anode metal layer, an Al-Ga-N layer, an N-type lightly doped layer, an N-type heavily doped layer, a buffer layer, a substrate and a cathode metal layer. The preparation method includes the following steps: depositing a buffer layer on the surface of a substrate, and forming an N-type heavily doped layer and an N-type lightly doped layer on the buffer layer; etching part of the N-type lightly doped layer to form a groove in the N-type lightly doped layer, and depositing an Al-Ga-N layer; continuing to deposit an anode metal layer; and depositing a cathode metal layer on the surface of the N-type heavily doped layer or the substrate. The GaN Schottky diode device providedby the invention has stronger breakdown resistance than the existing transverse planar and vertical GaN Schottky diodes. When the device is forwardly switched on, the series resistance is reduced andless heat is emitted, which is beneficial to the prevention of the phenomenon of heat escape. When the device is under a reverse bias voltage condition, the peak of the electric field is in the Al-Ga-N layer, which increases the reverse voltage withstanding characteristic of the device.

Description

technical field [0001] The invention relates to a heterostructure-based vertical gallium nitride Schottky diode device and a preparation method thereof, belonging to the technical field of semiconductor microelectronic devices and device technology. Background technique [0002] Semiconductor power devices are the core elements for efficient conversion, control and regulation of electrical energy. Nowadays, semiconductor power devices are widely used in many fields from traditional industrial control to personal computers, consumer electronics, smart cars, new energy systems, rail transit, smart grids, etc. In the past 60 years, silicon-based power semiconductor devices have been taking on this task and have made great progress. Today, however, silicon-based power devices have almost reached the upper limit of their material theoretical values. On the other hand, the high efficiency of the power energy conversion system, the high-speed switching frequency, and the miniatur...

Claims

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Application Information

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IPC IPC(8): H01L29/872H01L21/329H01L29/06H01L29/20
CPCH01L29/872H01L29/66212H01L29/0603H01L29/0684H01L29/2003
Inventor 张玉良邹新波杨杨
Owner SHANGHAI TECH UNIV
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