Method for preparing metal hetero atom doped two-dimensional SnS2 nanosheet array vertically grown on carbon cloth as sodium ion battery anode material

A nanosheet array, sodium-ion battery technology, applied in secondary batteries, battery electrodes, chemical instruments and methods, etc., can solve the problems of poor conductivity, large volume change, easy particle agglomeration capacity attenuation, etc., to achieve strong binding force, The effect of simple synthesis steps and easy operation of synthesis steps

Inactive Publication Date: 2019-08-30
BEIJING INSTITUTE OF TECHNOLOGYGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, during the electrode reaction, SnS 2 The electrical conductivity of SnS is poor, and the volume change is large (~520%), and the particles are easy to aggl

Method used

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  • Method for preparing metal hetero atom doped two-dimensional SnS2 nanosheet array vertically grown on carbon cloth as sodium ion battery anode material
  • Method for preparing metal hetero atom doped two-dimensional SnS2 nanosheet array vertically grown on carbon cloth as sodium ion battery anode material

Examples

Experimental program
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Effect test

Embodiment 1

[0014] (1) Soak the purchased carbon cloth in 30% hydrogen peroxide solution at 40°C for 24 hours, then wash it with acetone, distilled water and absolute ethanol, and dry it for later use.

[0015] (2) Dissolve 0.3506g of tin tetrachloride pentahydrate, 0.1503g of thioacetamide and 23.79mg of cobalt chloride hexahydrate in 10ml of isopropanol, and stir for 30min to obtain a uniform and stable mixed solution.

[0016] (3) Transfer the mixed solution obtained in step (2) to a 15ml reaction kettle, slowly put the carbon cloth in (1) into the reaction kettle along the wall, and put the hydrothermal kettle into a 160°C Keep in the oven for 24h, and cool down to room temperature naturally.

[0017] (4) After taking out the carbon cloth in step (3), carefully wash it several times with distilled water and ethanol to remove excess salt, and then vacuum dry the carbon cloth at 80 °C for 12 h to obtain metal Co-doped SnS 2 / carbon cloth composite material.

Embodiment 2

[0019] (1) Soak the purchased carbon cloth in 30% hydrogen peroxide solution at 40°C for 24 hours, then wash it with acetone, distilled water and absolute ethanol, and dry it for later use.

[0020] (2) Dissolve 0.3506g of tin tetrachloride pentahydrate, 0.1503g of thioacetamide and 29.11mg of cobalt nitrate hexahydrate in 10ml of isopropanol, and stir for 30min.

[0021] (3) Transfer the homogeneous mixed solution obtained in step (2) to a 15ml reaction kettle, slowly put the carbon cloth in (1) into the reaction kettle along the wall, and put the hydrothermal kettle at 160°C Keep in the oven for 24h, and cool down to room temperature naturally.

[0022] (4) After taking out the carbon cloth in step (3), carefully wash it several times with distilled water and ethanol to remove excess salt, and then vacuum dry the carbon cloth at 80 °C for 12 h to obtain metal Co-doped SnS 2 / carbon cloth composite material.

Embodiment 3

[0024] (1) Soak the purchased carbon cloth in 30% hydrogen peroxide solution at 40°C for 24 hours, then wash it with acetone, distilled water and absolute ethanol, and dry it for later use.

[0025] (2) Dissolve 0.3506g of tin tetrachloride pentahydrate, 0.1503g of thioacetamide and 19.01mg of cobalt acetate tetrahydrate in 10ml of isopropanol, and stir for 30min.

[0026] (3) Transfer the homogeneous mixed solution obtained in step (2) to a 15ml reaction kettle, slowly put the carbon cloth in (1) into the reaction kettle along the wall, and put the hydrothermal kettle into 160 ℃ oven for 24 h, naturally cooled to room temperature.

[0027] (4) After taking out the carbon cloth in step (3), carefully wash it several times with distilled water and ethanol to remove excess salt, and then vacuum dry the carbon cloth at 80 °C for 12 h to obtain metal Co-doped SnS 2 / carbon cloth composite material.

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Abstract

The invention relates to a method for preparing a metal hetero atom doped two-dimensional SnS2 nanosheet array vertically grown on a carbon cloth as a sodium ion battery anode material. The method comprises the steps of: uniformly mixing metal salt, stannide and sulfide into a stable solution according to a certain molar ratio; transferring the solution to a reaction vessel in which the carbon cloth is placed; reacting for a certain period of time at a certain temperature; repeatedly washing the carbon cloth with distilled water and absolute ethyl alcohol a plurality of times; and drying the carbon cloth to obtain a composite material in which the metal hetero atom doped SnS2 nanosheet is grown on the carbon cloth. The method has the advantages that the conditions are easy to control, theprocess is simple and feasible, no pollution is caused, and the product has excellent specific capacity, rate performance and rapid charge/discharge performance.

Description

technical field [0001] The invention belongs to the technical field of improving the energy storage capacity of two-dimensional tin sulfide nanosheets as anode materials for sodium-ion batteries, and specifically relates to doping metal heteroatoms into tin sulfide nanosheet lattices as anode materials for sodium-ion batteries Applications. Background technique [0002] Tin disulfide (SnS) with two-dimensional layered structure 2 ) due to its high theoretical capacity (~1136mAh g -1 ) can be used as an ideal anode material for sodium-ion batteries. In addition SnS 2 The interlayer spacing is about 0.59nm, and these special structures facilitate the intercalation and extraction of sodium ions. Layered SnS 2 The exfoliation of single-layer or few-layer nanosheets yields distinct physical and chemical properties, while leading to the formation of an open framework that facilitates Na ion shuttling and electrolyte infiltration. However, during the electrode reaction, SnS ...

Claims

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Application Information

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IPC IPC(8): H01M4/36H01M4/58H01M4/62H01M10/054C01G19/00B82Y30/00
CPCB82Y30/00C01G19/00C01P2004/03H01M4/366H01M4/5815H01M4/626H01M10/054H01M2004/021H01M2004/027Y02E60/10
Inventor 曹传宝王利芹
Owner BEIJING INSTITUTE OF TECHNOLOGYGY
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