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LED epitaxial growth method based on graphene

A technology of epitaxial growth and graphene, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve problems such as low product yield, large warping of epitaxial wafers, high chip grinding fragmentation rate, etc., to improve crystal quality, antistatic, etc. Effects of performance improvement and warpage reduction in epitaxial growth

Active Publication Date: 2019-09-17
XIANGNENG HUALEI OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the current traditional epitaxial growth technology, the warpage of the epitaxial wafer is large, especially when the epitaxial crystal is grown on a large-sized sapphire substrate, the warpage is even greater, resulting in a high rate of grinding fragments and low product yield in the subsequent chip manufacturing process

Method used

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  • LED epitaxial growth method based on graphene
  • LED epitaxial growth method based on graphene
  • LED epitaxial growth method based on graphene

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Embodiment 1

[0042] The invention uses PECVD to prepare graphene film on the sapphire substrate, and then uses MOCVD to grow high-brightness GaN-based LED epitaxial wafers. When growing high-brightness GaN-based LED epitaxial wafers, high-purity H 2 or high purity N 2 or high purity H 2 and high purity N 2 The mixed gas as the carrier gas, high-purity NH 3 As the N source, the metal-organic source trimethylgallium (TMGa), the metal-organic source triethylgallium (TEGa) is used as the gallium source, the trimethylindium (TMIn) is used as the indium source, and the N-type dopant is silane (SiH 4 ), trimethylaluminum (TMAl) as the aluminum source, and the P-type dopant as magnesium dicene (CP 2 Mg), the substrate is (0001) plane sapphire. The invention solves the problem of heterogeneous epitaxial growth of defects induced by lattice mismatch existing in the LED epitaxial growth in the prior art. The high-purity gas described in the present invention has a purity value of 99.999%, and t...

Embodiment 2

[0056] A conventional LED epitaxial growth method is provided below as a comparative example of the present invention.

[0057] Such as figure 2 As shown, the conventional LED epitaxial growth method includes the following steps:

[0058] Step 1, processing sapphire substrate 1: Into the reaction chamber of the metal organic chemical vapor deposition system with the substrate placed, H at 900°C-1100°C 2 Under the atmosphere, feed 50L / min-100L / min of H 2 , keep the reaction chamber pressure at 100mbar-200mbar, and process the sapphire substrate for 5min-10min.

[0059] Step 2, grow GaN low-temperature buffer layer 10: cool down to 500°C-600°C, keep the reaction chamber pressure at 300mbar-600mbar, and feed NH with a flow rate of 40L / min-60L / min 3 , 50sccm-100sccm TMGa and 50L / min-90L / min H 2 , growing a GaN low-temperature buffer layer 10 with a thickness of 30nm-60nm on a sapphire substrate.

[0060] Step 3, grow 3D GaN layer 11: raise the temperature to 850°C-1000°C, ke...

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Abstract

The invention discloses an LED epitaxial growth method based on graphene. The method sequentially comprises the following steps: growing a high-temperature gradient graphene layer, an n-type heavily-doped AlN layer, a low-temperature gradient graphene layer, an n-type lightly-doped AlN layer, a Si-doped N-type GaN layer, a periodically-grown MQW active layer, a P-type AlGaN layer and a Mg-doped P-type GaN layer on a sapphire substrate, and cooling. According to the method, the high-temperature gradient graphene layer, the n-type heavily-doped AlN layer, the low-temperature gradient graphene layer and the n-type lightly-doped AlN layer are adopted, so that warping of the LED epitaxial wafer can be reduced, the quality of epitaxial crystals is improved, and the photoelectric performance of an LED is improved.

Description

technical field [0001] The present application relates to the technical field of LED epitaxial growth, in particular, to a graphene-based LED epitaxial growth method. Background technique [0002] LED (Light Emitting Diode, light-emitting diode) is a kind of solid-state lighting, which has the characteristics of small size, low power consumption, long service life, high brightness, environmental protection and durability, and is widely recognized by consumers. Therefore, domestic production The scale of LED is also gradually expanding. [0003] Sapphire is the most common substrate material for industrial growth of GaN-based LEDs at this stage. In the current traditional epitaxial growth technology, the warpage of the epitaxial wafer is large, especially when the epitaxial crystal is grown on a large-sized sapphire substrate, the warpage is even greater, resulting in a high rate of grinding fragments in the subsequent chip manufacturing process and a low product yield. [...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/32H01L33/06H01L33/00H01L21/02
CPCH01L21/0242H01L21/02444H01L21/0254H01L21/0262H01L33/0066H01L33/0075H01L33/06H01L33/32
Inventor 徐平龚彬彬廖富达周佐华黄胜蓝
Owner XIANGNENG HUALEI OPTOELECTRONICS
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